公开(公告)号：US5075051A

公开(公告)日：1991-12-24

申请号：US385364

申请日：1989-07-27

Applicant: Kazuhiko Ito ,  Eiichi Yamazaki ,  Kunio Ohtaki ,  Fumio Korayashi ,  Yoshihisa Masuda ,  Hiroshi Nakanishi ,  Kiyozo Suzuki ,  Yuichi Miyoshi

Inventor： Kazuhiko Ito ,  Eiichi Yamazaki ,  Kunio Ohtaki ,  Fumio Korayashi ,  Yoshihisa Masuda ,  Hiroshi Nakanishi ,  Kiyozo Suzuki ,  Yuichi Miyoshi

IPC: B29C45/04 ,  B29C45/76 ,  B29D11/00

CPC classification number: B29D11/00432 ,  B29C45/0433 ,  B29C45/76

Abstract: A molding apparatus transfers plural molds in succession through a temperature elevating step, an injection molding step, pressurized cooling step and a molded article removing step. The apparatus is provided with plural cooling presses for the pressurized cooling step and so constructed as to prevent the stagnation in the transfer of the molds according to the molding conditions and the number of molds.

Abstract translation: 成型设备通过升温步骤，注射成型步骤，加压冷却步骤和模制品去除步骤连续地传送多个模具。 该设备设置有用于加压冷却步骤的多个冷却压机，并且被构造成防止根据成型条件和模具数量的模具的传送停滞。

公开(公告)号：US08166827B2

公开(公告)日：2012-05-01

申请号：US12436374

申请日：2009-05-06

Applicant: Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

Inventor： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

IPC: G01L9/06

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123

Abstract: A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

Abstract translation: 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。

公开(公告)号：US20110042763A1

公开(公告)日：2011-02-24

申请号：US12938007

申请日：2010-11-02

Applicant: Tohru YAMAOKA ,  Yuichi Miyoshi

Inventor： Tohru YAMAOKA ,  Yuichi Miyoshi

IPC: H01L29/84

CPC classification number: H04R19/005 ,  B81B3/0086 ,  B81B2201/0257 ,  H04R19/016 ,  H04R19/04 ,  H04R2410/03

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。

公开(公告)号：US07847359B2

公开(公告)日：2010-12-07

申请号：US12622975

申请日：2009-11-20

Applicant: Tohru Yamaoka ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Yuichi Miyoshi

IPC: H01L21/00 ,  H04R25/00

CPC classification number: H04R19/005 ,  B81B3/0086 ,  B81B2201/0257 ,  H04R19/016 ,  H04R19/04 ,  H04R2410/03

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。

公开(公告)号：US20100077863A1

公开(公告)日：2010-04-01

申请号：US12630179

申请日：2009-12-03

Applicant: Yuichi MIYOSHI ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

Inventor： Yuichi MIYOSHI ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

IPC: G01L9/06

CPC classification number: G01L9/0016 ,  H04R19/005

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract translation: 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。

公开(公告)号：US20100065932A1

公开(公告)日：2010-03-18

申请号：US12622975

申请日：2009-11-20

Applicant: Tohru Yamaoka ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Yuichi Miyoshi

IPC: H01L29/84

CPC classification number: H04R19/005 ,  B81B3/0086 ,  B81B2201/0257 ,  H04R19/016 ,  H04R19/04 ,  H04R2410/03

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。

公开(公告)号：US20070029894A1

公开(公告)日：2007-02-08

申请号：US10576518

申请日：2004-11-12

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi ,  Tomoyuki Sasaki

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi ,  Tomoyuki Sasaki

IPC: H01L41/00

CPC classification number: H01G5/0136 ,  H01G5/16 ,  H01G7/025 ,  H04R19/016 ,  H04R2499/11

Abstract: A silicon nitride film (103) and a silicon nitride film (106) are formed to cover a charged silicon oxide film (105) serving as an electret.

Abstract translation: 形成氮化硅膜（103）和氮化硅膜（106），以覆盖用作驻极体的带电氧化硅膜（105）。

公开(公告)号：US06451707B2

公开(公告)日：2002-09-17

申请号：US09729202

申请日：2000-12-05

Applicant: Toshihiko Nagai ,  Yuichi Miyoshi

Inventor： Toshihiko Nagai ,  Yuichi Miyoshi

IPC: H01L21461

CPC classification number: H01L21/76805 ,  H01L21/31116 ,  H01L21/76814

Abstract: After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by using the first cleaning solution having relatively low power to etch the processed film and the second cleaning solution having relatively high power to etch the processed film in that order, the etched pattern or its vicinity is rinsed with water.

Abstract translation: 在形成在基板上的底层膜上形成加工膜之后，使用掩模图案对经处理的膜进行干蚀刻以形成蚀刻图案。 在沉积在蚀刻图案的壁上的反应产物通过使用具有相对较低功率的第一清洗溶液去除以蚀刻经处理的膜并且具有相对较高功率的第二清洁溶液以该顺序蚀刻经处理的膜之后被去除时， 或其附近用水冲洗。

公开(公告)号：US06251000B1

公开(公告)日：2001-06-26

申请号：US09398819

申请日：1999-09-20

Applicant: Tomoyasu Murakami ,  Katsuyuki Ikenouchi ,  Yuichi Miyoshi

Inventor： Tomoyasu Murakami ,  Katsuyuki Ikenouchi ,  Yuichi Miyoshi

IPC: B24B4106

CPC classification number: B24B37/30

Abstract: A substrate holder for holding a substrate to be polished thereon and pressing the substrate against a polishing pad includes a substrate-holding head for holding the substrate thereon and pressing the substrate against the polishing pad. The substrate-holding head is disposed to be vertically movable toward/away from the polishing pad. A pressing member for pressing a peripheral region of the substrate, except for an outer edge region thereof, against the polishing pad is attached to the substrate-holding head.

Abstract translation: 用于保持要在其上抛光的基板并将基板按压在抛光垫上的基板保持器包括用于在其上保持基板并将基板压靠在抛光垫上的基板保持头。 基板保持头设置成能够朝向/远离抛光垫垂直移动。 将用于将基板的外围区域除外的按压构件压靠在研磨垫上的按压部件安装在基板固定头上。

公开(公告)号：US08320589B2

公开(公告)日：2012-11-27

申请号：US12939748

申请日：2010-11-04

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。