-
公开(公告)号：US12222640B2
公开(公告)日：2025-02-11
申请号：US18382269
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Shunya Taki , Hiroaki Iwaoka , Daijiro Akagi , Ichiro Ishikawa
Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625MP1+MP2≤1000 (1).
-
公开(公告)号：US20240427226A1
公开(公告)日：2024-12-26
申请号：US18822677
申请日：2024-09-03
Applicant: AGC Inc.
Inventor： Takeshi Okato , Daijiro Akagi , Takeshi Isogawa
Abstract: A reflective mask blank for EUV lithography, the reflective mask blank including: a substrate; a multilayer reflective film configured to reflect EUV light; and an absorption layer configured to absorb EUV light, in this order from a substrate side, in which the absorption layer includes a first absorption film and a second absorption film in this order from the substrate side, the absorption layer has a refractive index for EUV light having a wavelength of 13.5 nm of 0.95 or less, and the first absorption film is more easily chemically dry etched than the second absorption film.
-
公开(公告)号：US11953822B2
公开(公告)日：2024-04-09
申请号：US18198881
申请日：2023-05-18
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Daijiro Akagi , Hiroaki Iwaoka , Toshiyuki Uno , Michinori Suehara , Keishi Tsukiyama
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
-
Patent Agency Ranking
公开(公告)号：US20250147407A1
公开(公告)日：2025-05-08
申请号：US19013708
申请日：2025-01-08
Applicant: AGC Inc.
Inventor： Hiroaki ITO , Daijiro Akagi , Taiga Fudetani
Abstract: Provided is a reflective mask blank that is small in processing error in charged particle beam processing. A reflective mask blank (10a) includes a substrate (11), a multilayer reflective film (12) for reflecting EUV light, a protective film (13) and an absorber film (14) having a single-layer structure or a multilayer structure, wherein: any layer between the protective film (13) and the outermost layer located on the outermost side of the reflective mask blank (10a) opposite from the substrate (11) is an insulating layer having a sheet resistance of 1.0×103 Ω/sq. or higher; and an internal electrical resistance between a surface of the outermost layer opposite from the substrate (11) and the protective film (13) is 100 kΩ or lower.
-
公开(公告)号：US12235574B2
公开(公告)日：2025-02-25
申请号：US18420846
申请日：2024-01-24
Applicant: AGC Inc.
Inventor： Yuya Nagata , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
-
公开(公告)号：US12204240B2
公开(公告)日：2025-01-21
申请号：US18394787
申请日：2023-12-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
-
公开(公告)号：US12001133B2
公开(公告)日：2024-06-04
申请号：US18382356
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Takuma Kato , Daijiro Akagi , Takeshi Okato , Ryusuke Oishi , Yusuke Ono
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
-
公开(公告)号：US11914284B2
公开(公告)日：2024-02-27
申请号：US18346563
申请日：2023-07-03
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
-
-
-
-
-
-
-
Search Results
18
records
(took 0.015 seconds)
