公开(公告)号：US20200150066A1

公开(公告)日：2020-05-14

申请号：US16186843

申请日：2018-11-12

Applicant: AMS Sensors UK Limited

Inventor： Florin Udrea ,  Syed Zeeshan Ali

IPC: G01N27/04 ,  G01N27/12 ,  G01N27/14 ,  G01N27/22 ,  G01N33/00

Abstract: A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

公开(公告)号：US10527571B2

公开(公告)日：2020-01-07

申请号：US15123630

申请日：2015-02-27

Applicant: AMS SENSORS UK LIMITED

Inventor： Florin Udrea ,  Syed Zeeshan Ali ,  Julian Gardner

IPC: G01N27/00 ,  G01N27/04 ,  G01N27/14 ,  H05B3/26 ,  H05B3/14 ,  G01N33/00 ,  H01L21/8238

Abstract: It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region.

公开(公告)号：US10288575B2

公开(公告)日：2019-05-14

申请号：US15168547

申请日：2016-05-31

Applicant: AMS Sensors UK Limited

Inventor： Syed Zeeshan Ali ,  Simon Jonathan Stacey ,  Florin Udrea

IPC: G01N27/18 ,  H05B1/02 ,  G01N21/3504 ,  G01N27/12 ,  G01N27/16 ,  G01N21/03

Abstract: We disclose herein an environmental sensor system comprising an environmental sensor comprising a first heater and a second heater in which the first heater is configured to consume a lower power compared to the second heater. The system also comprises a controller coupled with the environmental sensor. The controller is configured to detect if a measured value of a targeted environmental parameter is present. The controller is configured to switch on at least one of the first and second heaters based on the presence and/or result of the measured value of the targeted environmental parameter.

公开(公告)号：US20190041346A1

公开(公告)日：2019-02-07

申请号：US16061428

申请日：2016-12-13

Applicant: AMS Sensors UK Limited

Inventor： Simon Jonathan Stacey ,  Matthew Govett ,  Syed Zeeshan Ali

IPC: G01N27/12 ,  H01L21/67

CPC classification number: G01N27/128 ,  H01L21/67103 ,  H01L21/67115

Abstract: We disclose herein a method for heating a gas sensing material formulation on a microhotplate which comprises: a dielectric membrane formed on a semiconductor substrate comprising an etched portion; and the gas sensing material formulation being located on one side of the dielectric membrane. The method comprising: selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and controllably cooling the semiconductor substrate using a cooling baseplate provided under the substrate and using an insulating medium located between the substrate and the cooling base plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation.

公开(公告)号：US10914636B2

公开(公告)日：2021-02-09

申请号：US15923670

申请日：2018-03-16

Applicant: AMS Sensors UK Limited

Inventor： Syed Zeeshan Ali ,  Kaspars Ledins

IPC: G01J5/12 ,  G01R31/26 ,  G01J5/02 ,  G01J5/14 ,  H01L35/34 ,  G01J5/00

Abstract: We disclose herein a method for testing and/or calibrating a thermopile based device. The method comprising: applying an electrical bias of a first polarity to the thermopile based device and measuring a first value of an electrical parameter; and applying an electrical bias of a second polarity to the thermopile based device and measuring a second value of an electrical parameter.

公开(公告)号：US20200150069A1

公开(公告)日：2020-05-14

申请号：US16186824

申请日：2018-11-12

Applicant: AMS Sensors UK Limited

Inventor： Florin Udrea ,  Syed Zeeshan Ali ,  Simon Jonathan Stacey

IPC: G01N27/12

Abstract: A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane. The dielectric membrane is adjacent to the etched cavity portion of the substrate. The dielectric membrane comprises an etched recess portion, a heater located within the dielectric layer, and a material for sensing a gas. The material for sensing a gas is located within the etched recess portion of the dielectric membrane.

公开(公告)号：US09909926B2

公开(公告)日：2018-03-06

申请号：US15168562

申请日：2016-05-31

Applicant: AMS Sensors UK Limited

Inventor： Richard Henry Hopper ,  Andrea De Luca ,  Kaspars Ledins ,  Syed Zeeshan Ali ,  Mohamed Foysol Chowdhury

IPC: G01J5/14 ,  G01N21/61 ,  G01N33/00 ,  B01L3/00 ,  G01N21/552 ,  H01L31/16 ,  H01L31/0232 ,  H01L31/02 ,  H01L35/32 ,  H01L37/00 ,  H01L31/167 ,  H01L31/0203 ,  H01L31/18

CPC classification number: G01J5/14 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/50273 ,  B01L2200/12 ,  B01L2300/0654 ,  B01L2300/08 ,  B01L2300/0858 ,  B01L2300/0887 ,  B01L2300/168 ,  B01L2400/0424 ,  G01J5/0853 ,  G01N21/0303 ,  G01N21/3504 ,  G01N21/552 ,  G01N21/61 ,  G01N33/004 ,  G01N2201/068 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/16 ,  H01L31/167 ,  H01L31/18 ,  H01L35/32 ,  H01L37/00

Abstract: We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.