公开(公告)号：US20210249345A1

公开(公告)日：2021-08-12

申请号：US17227867

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO ,  Bernhard STONAS ,  Jean DELMAS

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/14

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20210159158A1

公开(公告)日：2021-05-27

申请号：US16698680

申请日：2019-11-27

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Giback PARK ,  Kyuil CHO ,  Kurtis LESCHKIES ,  Roman GOUK ,  Chintan BUCH ,  Vincent DICAPRIO

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US20180350593A1

公开(公告)日：2018-12-06

申请号：US16039224

申请日：2018-07-18

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

公开(公告)号：US20160305013A1

公开(公告)日：2016-10-20

申请号：US15193307

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  Roman GOUK ,  Matthew D. SCOTNEY-CASTLE ,  Peter I. PORSHNEV

IPC: C23C14/58 ,  C23C14/48 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858 ,  C23C14/04 ,  C23C14/06

CPC classification number: C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

公开(公告)号：US20160133515A1

公开(公告)日：2016-05-12

申请号：US14896854

申请日：2014-05-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C18/1653 ,  C23C18/34 ,  C25D3/38 ,  C25D3/40 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76847 ,  H01L21/76898

Abstract: A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 在一些实施方式中，该方法包括提供硅衬底，该硅衬底具有在孔的底部包含暴露的硅接触表面的孔，在暴露的硅接触表面上沉积金属晶种层，并通过流过电流来将衬底暴露于电镀工艺 通过衬底的背面以在金属种子层上形成金属层。

公开(公告)号：US20210325776A1

公开(公告)日：2021-10-21

申请号：US16849393

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Jean DELMAS ,  Steven VERHAVERBEKE ,  Chintan BUCH

IPC: G03F7/00 ,  H01L21/768 ,  H01L21/027

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US20190287823A1

公开(公告)日：2019-09-19

申请号：US16422477

申请日：2019-05-24

Applicant: Applied Materials, Inc.

Inventor： Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Roman GOUK

IPC: H01L21/67 ,  B08B7/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.

公开(公告)号：US20190214247A1

公开(公告)日：2019-07-11

申请号：US16352631

申请日：2019-03-13

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/6719

Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US20190181019A1

公开(公告)日：2019-06-13

申请号：US16276866

申请日：2019-02-15

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN ,  Kyuil CHO ,  Colin Costano NEIKIRK ,  Boyi FU

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L21/48 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00

Abstract: Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes and reconstituted substrates formed therefrom. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the reconstituted substrates disclosed herein include a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and a cured epoxy molding compound formed there over. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

公开(公告)号：US20170213762A1

公开(公告)日：2017-07-27

申请号：US15382945

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE

IPC: H01L21/768

CPC classification number: H01L21/76873 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/40 ,  C23C18/54 ,  C25D3/38 ,  C25D3/48 ,  C25D5/022 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76898

Abstract: A method and apparatus for processing a silicon substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the silicon substrate to an electroplating process by flowing a current through a backside of the silicon substrate to form a metal layer on the metal seed layer.