公开(公告)号：US20170206922A1

公开(公告)日：2017-07-20

申请号：US15474851

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Li-Qun XIA ,  Yong-Won LEE ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Peter I. PORSHNEV

IPC: G11B5/85 ,  G11B5/74

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

公开(公告)号：US20160305013A1

公开(公告)日：2016-10-20

申请号：US15193307

申请日：2016-06-27

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  Roman GOUK ,  Matthew D. SCOTNEY-CASTLE ,  Peter I. PORSHNEV

IPC: C23C14/58 ,  C23C14/48 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858 ,  C23C14/04 ,  C23C14/06

CPC classification number: C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

公开(公告)号：US20200381278A1

公开(公告)日：2020-12-03

申请号：US16885909

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Kim Ramkumar VELLORE ,  Leonid M. TERTITSKI ,  Matthew D. SCOTNEY-CASTLE

IPC: H01L21/67 ,  G01J5/00 ,  H04N5/33

Abstract: A method and apparatus for measuring a temperature of a substrate located in a semiconductor processing environment is disclosed. The substrate has a top surface and an edge surface, and is positioned in a prescribed location within the semiconductor processing environment. An infrared camera oriented to view one side of the edge surface of the substrate is triggered to obtain an infrared image of the one side of the edge surface of the substrate. The infrared image is processed to obtain a temperature profile of the substrate.

公开(公告)号：US20180102248A1

公开(公告)日：2018-04-12

申请号：US15831342

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun XUE ,  Ludovic GODET ,  Martin A. HILKENE ,  Matthew D. SCOTNEY-CASTLE

IPC: H01L21/02 ,  C23C14/04 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US20140273461A1

公开(公告)日：2014-09-18

申请号：US14201700

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Ludovic GODET

IPC: H01L21/314 ,  H01L21/311

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32412 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0332 ,  H01L21/31155

Abstract: Methods for forming a hydrogen implanted amorphous carbon layer with desired film mechanical strength as well as optical film properties are provided. In one embodiment, a method of a hydrogen implanted amorphous carbon layer includes providing a substrate having a material layer disposed thereon, forming an amorphous carbon layer on the material layer, and ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer.

Abstract translation: 提供了形成具有期望膜机械强度的氢注入非晶碳层以及光学膜性质的方法。 在一个实施例中，氢注入非晶碳层的方法包括提供其上设置有材料层的基板，在所述材料层上形成无定形碳层，以及将氢离子从含氢气体注入到所述非晶碳层中至 形成氢注入非晶碳层。

公开(公告)号：US20140147700A1

公开(公告)日：2014-05-29

申请号：US14170009

申请日：2014-01-31

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Li-Qun XIA ,  Yong-Won LEE ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Peter I. PORSHNEV

IPC: G11B5/74 ,  G11B5/85

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Abstract translation: 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基板上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20170304877A1

公开(公告)日：2017-10-26

申请号：US15479609

申请日：2017-04-05

Applicant: Applied Materials, Inc.

Inventor： Martin A. HILKENE ,  David K. CARLSON ,  Matthew D. SCOTNEY-CASTLE

IPC: B08B7/00 ,  C30B25/14 ,  B08B9/027 ,  C30B25/16 ,  C30B29/06 ,  H01J37/32

CPC classification number: B08B7/0035 ,  C30B25/14 ,  C30B29/06 ,  H01J37/32357 ,  H01J37/32834 ,  H01J37/32963 ,  H01J2237/335

Abstract: Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

公开(公告)号：US20170294292A1

公开(公告)日：2017-10-12

申请号：US15480187

申请日：2017-04-05

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Matthew D. SCOTNEY-CASTLE ,  Norman L. TAM ,  Matthew SPULLER ,  Kong Lung Samuel CHAN ,  Dongming IU

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32834 ,  H01J37/32899

Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

公开(公告)号：US20150279974A1

公开(公告)日：2015-10-01

申请号：US14622647

申请日：2015-02-13

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Christopher HATEM ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/223

CPC classification number: H01L29/66803 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/30 ,  H01L21/30604 ,  H01L21/3065

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract translation: 本发明的实施例提供了使用用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的转换工艺来形成具有所需材料的鳍结构的方法。 在一个实施例中，在衬底上形成翅片结构的方法包括对由包括第一类型的原子的衬底形成的鳍结构执行定向等离子体处理，所述定向等离子体工艺在鳍的侧壁上掺杂第二类型的原子 结构，进行表面改性处理以在与第一类型的原子反应的翅片结构的侧壁上形成表面改性层，在表面改性期间用翅片结构中的第二类型的原子代替第一类型的原子 处理，并且形成包括基板上的第二类型的原子的翅片结构。