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公开(公告)号:US11629409B2
公开(公告)日:2023-04-18
申请号:US16424302
申请日:2019-05-28
Applicant: APPLIED MATERIALS, INC.
Inventor: Ribhu Gautam , Ananthkrishna Jupudi , Tuck Foong Koh , Preetham P. Rao , Vinodh Ramachandran , Yueh Sheng Ow , Yuichi Wada , Cheng-Hsiung Tsai , Kai Liang Liew
IPC: C23C16/511 , B01J19/12 , C23C16/54 , H05B6/64 , H01J37/32
Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.
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公开(公告)号:US20220189749A1
公开(公告)日:2022-06-16
申请号:US17120721
申请日:2020-12-14
Applicant: Applied Materials, Inc.
Inventor: Ribhu Gautam , Vibhu Jindal , Kamatchi Gobinath Manoharan , Sanjay Bhat , Praveen Kumar Choragudi , Wen Xiao , Vinodh Ramachandran
Abstract: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.
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公开(公告)号:US20220187698A1
公开(公告)日:2022-06-16
申请号:US17120789
申请日:2020-12-14
Applicant: Applied Materials, Inc.
Inventor: Vibhu Jindal , Sanjay Bhat , Wen Xiao , Vinodh Ramachandran
Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.
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14.
公开(公告)号:US10950475B1
公开(公告)日:2021-03-16
申请号:US16545537
申请日:2019-08-20
Applicant: APPLIED MATERIALS, INC.
Inventor: Vinodh Ramachandran , Ananthkrishna Jupudi , Cheng-Hsiung Tsai , Yueh Sheng Ow , Preetham P. Rao , Ribhu Gautam , Prashant Agarwal
IPC: H01L21/67 , H01L21/324 , H05B6/64 , H01L21/66 , G01J5/10
Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.
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