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公开(公告)号：US11231657B2
公开(公告)日：2022-01-25
申请号：US16625135
申请日：2018-06-07
Applicant: ASML Netherlands B.V.
Inventor： Adrianus Hendrik Koevoets , Cornelis Adrianus De Meijere , Willem Michiel De Rapper , Sjoerd Nicolaas Lambertus Donders , Jan Groenewold , Alain Louis Claude Leroux , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Johannes Adrianus Cornelis Maria Pijnenburg , Jacobus Cornelis Gerardus Van Der Sanden
IPC: G03F7/20
Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.
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公开(公告)号：US10908496B2
公开(公告)日：2021-02-02
申请号：US16093537
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10031422B2
公开(公告)日：2018-07-24
申请号：US14438482
申请日：2013-09-23
Applicant: ASML Netherlands B.V.
Abstract: A radiation source for a lithographic apparatus uses a plurality of fiber lasers to ignite a fuel droplet at an ignition location to generate EUV radiation. The fiber lasers may be provided to emit parallel to an optical axis and a telescopic optical system is provided to focus the lasers at the ignition location, or the lasers may be directed towards the optical axis with a final focus lens being used to reduce beam waist. The lasers may be provided in two or more groups to allow them to be independently controlled and some of the lasers may be focused at a different location to provide a pre-pulse. Radiation from fiber lasers may also be combined using dichroic mirrors.
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公开(公告)号：US20150264791A1
公开(公告)日：2015-09-17
申请号：US14418366
申请日：2013-07-05
Applicant: ASML Netherlands B.V.
Inventor： Andrey Nikipelov , Frederik Dijksman , Mikhailovich Yakunin
IPC: H05G2/00
Abstract: A method for generating radiation. Directing a first body from a first location. Directing a second body from a second, different location. The first body and second body being used to form a target at a plasma formation location. At least one of the first body and second body comprising a fuel for use in generating a radiation generating plasma. Directing initiating radiation at the target at the plasma formation location to generate a radiation generating plasma from the target.
Abstract translation: 一种产生辐射的方法。 从第一个位置引导第一个身体。 从第二个不同的位置引导第二个身体。 用于在等离子体形成位置形成靶的第一体和第二体。 第一主体和第二主体中的至少一个包括用于产生辐射产生等离子体的燃料。 引导在等离子体形成位置处的目标处的发射辐射以产生来自靶的辐射产生等离子体。
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公开(公告)号：US11874607B2
公开(公告)日：2024-01-16
申请号：US17606493
申请日：2020-04-01
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/00 , H01L21/687
CPC classification number: G03F7/707 , H01L21/6875 , H01L21/68757
Abstract: A method for providing a wear-resistant material on a body. A composite body that may be obtained by the method. The composite body may be a substrate holder or a reticle clamp for use in a lithographic apparatus. The method includes providing a body made of glass, ceramic or glass-ceramic; providing a wear-resistant material having a hardness of more than 20 GPa; and brazing or laser welding the wear-resistant material to the body.
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Patent Agency Ranking
公开(公告)号：US11550234B2
公开(公告)日：2023-01-10
申请号：US17279133
申请日：2019-09-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Nikipelov , Johan Franciscus Maria Beckers
Abstract: An object, such as a sensor for an immersion lithographic apparatus, has an outer layer which comes in contact with immersion liquid and wherein the outer layer has a composition including a rare earth element. There is also provided an immersion lithographic apparatus having such an object and a method for manufacturing such an object.
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17.发明授权公开(公告)号：US11143975B2
公开(公告)日：2021-10-12
申请号：US16472712
申请日：2017-11-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Joost André Klugkist , Maxim Aleksandrovich Nasalevich , Roland Johannes Wilhelmus Stas , Sando Wricke
Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.
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公开(公告)号：US11048180B2
公开(公告)日：2021-06-29
申请号：US16571956
申请日：2019-09-16
Applicant: ASML Netherlands B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Christian Gerardus Norbertus Hendricus Marie Cloin , Edwin Te Sligte , Marcus Adrianus Van De Kerkhof , Ferdinandus Martinus Jozef Henricus Van De Wetering
IPC: G03F7/20
Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10976196B2
公开(公告)日：2021-04-13
申请号：US16488259
申请日：2018-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Joost André Klugkist , Vadim Yevgenyevich Banine , Johan Franciscus Maria Beckers , Madhusudhanan Jambunathan , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Roland Johannes Wilhelmus Stas , David Ferdinand Vles , Wilhelmus Jacobus Johannes Welters , Sandro Wricke
Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.
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