公开(公告)号：US20200257204A1

公开(公告)日：2020-08-13

申请号：US16649699

申请日：2018-10-05

申请人： ASML NETHERLANDS B.V.

发明人： Duan-Fu Stephen HSU

IPC分类号： G03F7/20 ,  G03F1/24

摘要： A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US20240119212A1

公开(公告)日：2024-04-11

申请号：US18277014

申请日：2022-02-25

申请人： ASML NETHERLANDS B.V.

发明人： Jung Hoon SER ,  Sungwoon PARK ,  Xin LEI ,  Jinwoong JEONG ,  Rongkuo ZHAO ,  Duan-Fu Stephen HSU ,  Xiaoyang LI

IPC分类号： G06F30/392 ,  G06F30/398

CPC分类号： G06F30/392 ,  G06F30/398 ,  G06F2119/02

摘要： Methods for configuring a patterning process based on results of another patterning process is described. The method includes obtaining a first set of contours by simulating a first patterning process using a design layout in a first orientation. The contours satisfy a design specification associated with the design layout and correspond to a first set of process window conditions. A second patterning process is configured based on a second orientation of the design layout, the first set of process window conditions and the first set of contours. The second patterning process is associated with one or more design variables (e.g., illumination, mask pattern) that affect a second set of contours. The configuring includes adjusting one or more design variables until the second set of contours are within a desired matching threshold with the first set of contours.

公开(公告)号：US20230161265A1

公开(公告)日：2023-05-25

申请号：US18157776

申请日：2023-01-20

申请人： ASML Netherlands B.V.

发明人： Pioter NIKOLSKI ,  Thomas THEEUWES ,  Antonio CORRADI ,  Duan-Fu Stephen HSU ,  Sun Wook JUNG

IPC分类号： G03F7/20

CPC分类号： G03F7/70525 ,  G03F7/70616 ,  G03F7/70441

摘要： Disclosed is a method of determining a process window within a process space comprising obtaining contour data relating to features to be provided to a substrate across a plurality of layers, for each of a plurality of process conditions associated with providing the features across said plurality of layers and failure mode data describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

公开(公告)号：US20230161264A1

公开(公告)日：2023-05-25

申请号：US18089940

申请日：2022-12-28

申请人： ASML NETHERLANDS B.V.

发明人： Duan-Fu Stephen HSU ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC分类号： G03F7/20

CPC分类号： G03F7/70266 ,  G03F7/705 ,  G03F7/7055

摘要： A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US20180011407A1

公开(公告)日：2018-01-11

申请号：US15547324

申请日：2016-02-09

申请人： ASML Netherlands B.V.

发明人： Duan-Fu Stephen HSU

IPC分类号： G03F7/20

CPC分类号： G03F7/705 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70666 ,  G03F7/70675

摘要： A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function of a stochastic variation of a characteristic of an aerial image or a resist image, or a function of a variable that is a function of the stochastic variation or that affects the stochastic variation, the stochastic variation being a function of a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied.

公开(公告)号：US20170082927A1

公开(公告)日：2017-03-23

申请号：US15126234

申请日：2015-03-03

申请人： ASML NETHERLANDS B.V.

发明人： Duan-Fu Stephen HSU ,  Jianjun JIA ,  Xiaofeng LIU ,  Youping ZHANG

IPC分类号： G03F7/20

CPC分类号： G03F7/7055 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705

摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied. The multi-variable cost function may be a function of one or more pattern shift errors. Reconfiguration of the characteristics may be under one or more constraints on the one or more pattern shift errors.

公开(公告)号：US20150095858A1

公开(公告)日：2015-04-02

申请号：US14563610

申请日：2014-12-08

申请人： ASML NETHERLANDS B.V.

发明人： Jang Fung CHEN ,  Duan-Fu Stephen HSU ,  Douglas VAN DEN BROEKE

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. In embodiments, the invention provides a double exposure lithography method which trims (i.e., removes) unwanted SB residues from the substrate, that is suitable for use, for example, when printing 65 nm or 45 nm node devices or less. According to certain aspects, the present invention provides the ability to utilize large SBs due to the mutual trimming of SBs that results from the process of the present invention. Specifically, in the given process, both the H-mask and the V-mask contain circuit features and SBs, but they are in different corresponding orientations, and therefore, there is a mutual SB trimming for the H-mask and V-mask during the two exposures.

摘要翻译： 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 在实施例中，本发明提供了一种双曝光光刻方法，其从衬底修剪（即去除）不期望的SB残余物，其适用于例如当印刷65nm或45nm节点器件或更少时。 根据某些方面，本发明提供了由于本发明的方法产生的SB的相互修剪而利用大型SB的能力。 具体地说，在给定的处理中，H掩模和V掩模都包含电路特征和SB，但是它们处于不同的相应取向，因此在H掩模和V掩模期间存在相互的SB修整 两次曝光。

公开(公告)号：US20240219843A1

公开(公告)日：2024-07-04

申请号：US18532977

申请日：2023-12-07

申请人： ASML Netherlands B.V.

发明人： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

IPC分类号： G03F7/00

CPC分类号： G03F7/70308

摘要： Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US20230205096A1

公开(公告)日：2023-06-29

申请号：US17927866

申请日：2021-05-14

申请人： ASML NETHERLANDS B.V.

发明人： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

IPC分类号： G03F7/20

CPC分类号： G03F7/705 ,  G03F7/706 ,  G03F7/70525

摘要： Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US20220011674A1

公开(公告)日：2022-01-13

申请号：US17479202

申请日：2021-09-20

申请人： ASML NETHERLANDS B.V.

发明人： Duan-Fu Stephen HSU

IPC分类号： G03F7/20 ,  G03F1/24

摘要： A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.