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公开(公告)号：US10162272B2
公开(公告)日：2018-12-25
申请号：US15240781
申请日：2016-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan Jak , Hendrik Jan Hidde Smilde , Te-Chih Huang , Victor Emanuel Calado , Henricus Wilhelmus Maria Van Buel , Richard Johannes Franciscus Van Haren
Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
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12.发明授权Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method 有权位置测量装置，位置测量方法，光刻设备和装置制造方法公开(公告)号：US09506743B2
公开(公告)日：2016-11-29
申请号：US14427287
申请日：2013-09-20
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor： Arie Jeffrey Den Boef , Justin Lloyd Kreuzer , Simon Gijsbert Josephus Mathijssen , Gerrit Johannes Nijmeijer , J. Christian Swindal , Patricius Aloysius Jacobus Tinnemans , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/002 , G03F7/70775 , G03F9/7003 , G03F9/7049 , G03F9/7088 , H01L22/12
Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.
Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。
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13.发明申请METHODS AND APPARATUS FOR OBTAINING DIAGNOSTIC INFORMATION RELATING TO AN INDUSTRIAL PROCESS 有权获取与工业过程相关的诊断信息的方法和装置公开(公告)号：US20160246185A1
公开(公告)日：2016-08-25
申请号：US15025856
申请日：2014-09-05
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
CPC classification number: G03F7/70616 , G03F7/70508 , G03F7/70525 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F9/7092 , G06F17/30572
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
Abstract translation: 在光刻工艺中，诸如半导体晶片的产品单元经受光刻图案化操作和化学和物理处理操作。 在执行过程期间分阶段进行对准数据或其他测量，以获得表示在空间上分布在每个单元上的点处测量的位置偏差或其他参数的对象数据。 该对象数据用于通过执行多变量分析来获取诊断信息，以将表示所述多维空间中的单位的向量集合分解为一个或多个分量向量。 使用分量向量提取关于工业过程的诊断信息。 可以基于提取的诊断信息来控制后续产品单元的工业过程的性能。
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公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC: G01B11/14
CPC classification number: G01B11/14 , G03F7/70633 , G03F7/70683
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。
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15.发明授权公开(公告)号：US12287584B2
公开(公告)日：2025-04-29
申请号：US18232570
申请日：2023-08-10
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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Patent Agency Ranking
公开(公告)号：US11300889B2
公开(公告)日：2022-04-12
申请号：US17267974
申请日：2019-07-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Subodh Singh , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Amandev Singh
IPC: G03F7/20
Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.
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公开(公告)号：US11226567B2
公开(公告)日：2022-01-18
申请号：US16638552
申请日：2018-08-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten , Mahdi Sadeghinia
Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.
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公开(公告)号：US11036146B2
公开(公告)日：2021-06-15
申请号：US15769339
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Peter Ten Berge , Peter Hanzen Wardenier , Erik Jensen , Hakki Ergün Cekli
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
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公开(公告)号：US10719011B2
公开(公告)日：2020-07-21
申请号：US15765489
申请日：2016-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Daan Maurits Slotboom , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier
Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.
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公开(公告)号：US10474045B2
公开(公告)日：2019-11-12
申请号：US15737990
申请日：2016-06-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Patricius Aloysius Jacobus Tinnemans , Alexander Ypma , Irina Anatolievna Lyulina , Edo Maria Hulsebos , Hakki Ergün Cekli , Xing Lan Liu , Loek Johannes Petrus Verhees , Victor Emanuel Calado , Leon Paul Van Dijk
Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
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