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公开(公告)号：US11379648B2
公开(公告)日：2022-07-05
申请号：US16993685
申请日：2020-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Frank Gang Chen , Joseph Werner De Vocht , Yuelin Du , Wanyu Li , Yen-Wen Lu
IPC: G06F30/398 , G03F7/20
Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
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公开(公告)号：US11353797B2
公开(公告)日：2022-06-07
申请号：US16463430
申请日：2017-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Yen-Wen Lu , Xiaorui Chen , Yang Lin
IPC: G05B19/418 , G03F7/20
Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.
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公开(公告)号：US20210271172A1
公开(公告)日：2021-09-02
申请号：US17176559
申请日：2021-02-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Ya Luo , Yu Cao , Jen-Shiang Wang , Yen-Wen Lu
Abstract: Methods of determining, and using, a process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.
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14.发明授权公开(公告)号：US11016395B2
公开(公告)日：2021-05-25
申请号：US16467124
申请日：2017-12-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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公开(公告)号：US10755025B2
公开(公告)日：2020-08-25
申请号：US15821051
申请日：2017-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Frank Gang Chen , Joseph Werner De Vocht , Yuelin Du , Wanyu Li , Yen-Wen Lu
IPC: G06F30/398 , G06F7/20 , G03F7/20
Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.
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Patent Agency Ranking
公开(公告)号：US10296681B2
公开(公告)日：2019-05-21
申请号：US15982933
申请日：2018-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US10007744B2
公开(公告)日：2018-06-26
申请号：US14941347
申请日：2015-11-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70633 , G03F7/70683 , G06F17/12 , G06F17/14 , G06F2217/12 , G06F2217/14
Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
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公开(公告)号：US20160146740A1
公开(公告)日：2016-05-26
申请号：US14945257
申请日：2015-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC classification number: G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
Abstract translation: 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。
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公开(公告)号：US20240012335A1
公开(公告)日：2024-01-11
申请号：US18233365
申请日：2023-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Jing Su , Yen-Wen Lu , Ya Luo
CPC classification number: G03F7/70441 , G06N20/00 , G03F7/705 , G06N5/047
Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.
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20.发明授权公开(公告)号：US11789371B2
公开(公告)日：2023-10-17
申请号：US17882389
申请日：2022-08-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
CPC classification number: G03F7/705 , G03F7/70283 , G03F7/70866 , G03F1/36
Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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