公开(公告)号：US20190235391A1

公开(公告)日：2019-08-01

申请号：US16229009

申请日：2018-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper BIJNEN ,  Edo Maria Hulsebos ,  Henricus Johannes Lambertus Megens ,  Robert John Socha ,  Youping Zhang

IPC: G03F7/20 ,  G03F9/00 ,  G06F17/50

CPC classification number: G03F7/7085 ,  G03F7/70425 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046 ,  G03F9/7088 ,  G06F17/5068

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

公开(公告)号：US20190018326A1

公开(公告)日：2019-01-17

申请号：US16125074

申请日：2018-09-07

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Te-Chih Huang ,  Youping Zhang

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/88

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

公开(公告)号：US10073357B2

公开(公告)日：2018-09-11

申请号：US15117409

申请日：2015-01-28

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Te-Chih Huang ,  Youping Zhang

IPC: G01B11/00 ,  G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G01N21/47 ,  G01N21/88

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

公开(公告)号：US10061212B2

公开(公告)日：2018-08-28

申请号：US15477602

申请日：2017-04-03

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos ,  Youping Zhang

IPC: G03F7/20 ,  H01L21/66 ,  H01L23/544

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

公开(公告)号：US11635699B2

公开(公告)日：2023-04-25

申请号：US17312709

申请日：2019-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

IPC: G03F7/20

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

公开(公告)号：US20210150116A1

公开(公告)日：2021-05-20

申请号：US17157642

申请日：2021-01-25

Applicant: ASML Netherlands B.V.

Inventor： Chi-Hsiang Fan ,  Feng Chen ,  Wangshi Zhao ,  Youping Zhang

IPC: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20200150547A1

公开(公告)日：2020-05-14

申请号：US16744269

申请日：2020-01-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US10585357B2

公开(公告)日：2020-03-10

申请号：US16063190

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits Van Der Schaar ,  Youping Zhang ,  Hua Xu

IPC: G01B11/14 ,  G03F7/20 ,  G03F9/00

Abstract: A target structure, wherein the target structure is configured to be measured with a metrology tool that has a diffraction threshold; the target structure including: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period in a first direction and periodic with a second period in a second direction, wherein the first direction and second direction are different and parallel to the substrate, and the first period is equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

公开(公告)号：US10423075B2

公开(公告)日：2019-09-24

申请号：US14575609

申请日：2014-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye ,  Youping Zhang

IPC: G03F7/20 ,  G06F17/10

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

公开(公告)号：US12242201B2

公开(公告)日：2025-03-04

申请号：US17276533

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Weixuan Hu ,  Fei Yan ,  Wei Peng ,  Vivek Kumar Jain

IPC: G03F7/00

Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.