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公开(公告)号：US12142460B2
公开(公告)日：2024-11-12
申请号：US18450635
申请日：2023-08-16
Applicant: Advanced Energy Industries, Inc.
Inventor： Denis Shaw , Kevin Fairbairn , Daniel Carter
Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
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公开(公告)号：US12142452B2
公开(公告)日：2024-11-12
申请号：US17528268
申请日：2021-11-17
Applicant: Advanced Energy Industries, Inc.
Inventor： Daniel Carter , Victor Brouk , Daniel J. Hoffman
Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.
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公开(公告)号：US12125674B2
公开(公告)日：2024-10-22
申请号：US16871613
申请日：2020-05-11
Applicant: Advanced Energy Industries, Inc.
Inventor： Daniel Carter
CPC classification number: H01J37/32137 , H01J37/32715 , H03K3/64 , H03K3/70 , H03K3/78 , H01J37/32183 , H01J2237/004 , H01J2237/334
Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.
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公开(公告)号：US20230377840A1
公开(公告)日：2023-11-23
申请号：US18198790
申请日：2023-05-17
Applicant: Advanced Energy Industries, Inc.
Inventor： Daniel Carter , Randy Heckman , Victor Brouk , Daniel J. Hoffman
IPC: H01J37/32
CPC classification number: H01J37/32009 , H01J37/32174 , H01J37/32935 , H01J37/3299
Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, a first power supply coupled to a second node, a first switch that couples the second node to the first node, and responsive to the first switch being closed, a peak voltage is applied at the first node. The apparatus also includes a second switch that couples a third node to the first node, and responsive to the second switch being closed, a voltage step is applied at the first node. In addition, a second power supply is coupled to the first node to produce a ramped voltage at the first node.
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公开(公告)号：US20220157555A1
公开(公告)日：2022-05-19
申请号：US17528268
申请日：2021-11-17
Applicant: Advanced Energy Industries, Inc.
Inventor： Daniel Carter , Victor Brouk , Daniel J. Hoffman
Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.
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Patent Agency Ranking
公开(公告)号：US11282677B2
公开(公告)日：2022-03-22
申请号：US16896709
申请日：2020-06-09
Applicant: Advanced Energy Industries, Inc.
Inventor： Denis Shaw , Kevin Fairbairn , Daniel Carter
Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
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公开(公告)号：US10896807B2
公开(公告)日：2021-01-19
申请号：US16803020
申请日：2020-02-27
Applicant: Advanced Energy Industries, Inc.
Inventor： Kevin Fairbairn , Denis Shaw , Daniel Carter
Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.
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公开(公告)号：US20200090905A1
公开(公告)日：2020-03-19
申请号：US16557209
申请日：2019-08-30
Applicant: Advanced Energy Industries, Inc.
Inventor： Victor Brouk , Daniel J. Hoffman , Daniel Carter , Dmitri Kovalevskii
Abstract: This disclosure describes systems, methods, and apparatus for controlling ion energy in a plasma processing chamber. In particular, a system for plasma processing includes a plasma processing chamber, a plasma source coupled to the plasma processing chamber, a plasma power supply coupled to the plasma source that is configured to apply power to the plasma processing chamber in periodic pulse envelopes to control a density of a plasma in the plasma processing chamber, and a support within the plasma processing chamber to support a substrate. A bias supply is configured to provide a modified periodic voltage function to the substrate support within each of the periodic pulse envelopes to control an energy of ions impacting the substrate support in the plasma processing chamber.
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公开(公告)号：US20190157040A1
公开(公告)日：2019-05-23
申请号：US16193790
申请日：2018-11-16
Applicant: Advanced Energy Industries, Inc.
Inventor： Kevin Fairbairn , Denis Shaw , Daniel Carter
Abstract: Systems and methods for plasma processing are disclosed. A method includes applying power to a plasma processing chamber during a first processing step and generating, during the first processing step, a first plasma sheath voltage between a substrate and a plasma. During a second processing step (that follows the first processing step), power is applied to the plasma processing chamber and a different plasma sheath voltage is applied between the substrate and the plasma.
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公开(公告)号：US11842884B2
公开(公告)日：2023-12-12
申请号：US17692880
申请日：2022-03-11
Applicant: Advanced Energy Industries, Inc.
Inventor： Denis Shaw , Kevin Fairbairn , Daniel Carter
CPC classification number: H01J37/32174 , H01J37/32412 , H01J37/32477 , H01J37/32559 , H01J37/32568 , H01J37/32706 , H01J37/32935 , H01L21/67109
Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
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