Spatial control of plasma processing environments

    公开(公告)号:US12159767B2

    公开(公告)日:2024-12-03

    申请号:US17902987

    申请日:2022-09-05

    Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

    Apparatus to control a waveform
    2.
    发明授权

    公开(公告)号:US12154759B2

    公开(公告)日:2024-11-26

    申请号:US18330005

    申请日:2023-06-06

    Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

    System, method, and apparatus for controlling ion energy distribution in plasma processing systems

    公开(公告)号:US11615941B2

    公开(公告)日:2023-03-28

    申请号:US16278822

    申请日:2019-02-19

    Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

    SURFACE CHARGE AND POWER FEEDBACK AND CONTROL USING A SWITCH MODE BIAS SYSTEM

    公开(公告)号:US20210351007A1

    公开(公告)日:2021-11-11

    申请号:US16871613

    申请日:2020-05-11

    Inventor: Daniel Carter

    Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

    Electrostatic remote plasma source system and method
    7.
    发明授权
    Electrostatic remote plasma source system and method 有权
    静电远程等离子体源系统及方法

    公开(公告)号:US09524854B2

    公开(公告)日:2016-12-20

    申请号:US14741109

    申请日:2015-06-16

    Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

    Abstract translation: 本公开描述了用于将能量电容耦合到等离子体中以点燃和维持远程等离子体源内的等离子体的系统,方法和装置。 功率由至少部分地围绕或被第二电极围绕的第一电极提供。 第二个电极可以接地或浮动。 可以布置第一和第二介电部件以将电极中的一个或两个与等离子体分开,从而将等离子体与一个或两个电极隔离。

    ION ENERGY BIAS CONTROL APPARATUS
    8.
    发明申请
    ION ENERGY BIAS CONTROL APPARATUS 审中-公开
    离子能量偏差控制装置

    公开(公告)号:US20160020072A1

    公开(公告)日:2016-01-21

    申请号:US14803815

    申请日:2015-07-20

    CPC classification number: H01J37/32091 H01J37/241 H01J37/32146

    Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

    Abstract translation: 本公开描述了用于操作等离子体处理室的系统,方法和装置。 特别地,可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压,该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量,而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

    Passive power distribution for multiple electrode inductive plasma source
    9.
    发明授权
    Passive power distribution for multiple electrode inductive plasma source 有权
    多电极感应等离子体源的无源功率分布

    公开(公告)号:US08742669B2

    公开(公告)日:2014-06-03

    申请号:US13681258

    申请日:2012-11-19

    CPC classification number: H01J37/321 H01J37/32174 H01J37/32183 H05H1/46

    Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

    Abstract translation: 公开了用于控制处理室中的等离子体的空间分布的系统,方法和装置。 示例性系统包括主电感器,其设置成当功率被主动施加到初级电感器时激发等离子体; 位于主电感器附近的至少一个次级电感器,使得通过次级电感器的基本上所有的电流都是由与主电感器的等离子体的互感产生的。 另外,至少一个终端元件耦合到至少一个次级电感器,所述至少一个终端元件影响通过至少一个次级电感器的电流,以便影响等离子体的空间分布。

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