Abstract:
Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
Abstract:
An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.
Abstract:
An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.
Abstract:
Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.
Abstract:
Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.
Abstract:
Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.
Abstract:
This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.
Abstract:
This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.
Abstract:
Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.
Abstract:
Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship dV 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, dV0/dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.