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11.发明授权Use of slurry waste composition to determine the amount of metal removed during chemical mechanical polishing, and system for accomplishing same 失效使用浆料废料组合物来确定在化学机械抛光过程中去除的金属量，以及完成相同的系统公开(公告)号：US06764868B1
公开(公告)日：2004-07-20
申请号：US09909112
申请日：2001-07-19
IPC分类号： H01L2166
CPC分类号： B24B37/013 , B24B37/042 , B24B49/00
摘要： In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer formed thereabove, performing a chemical mechanical polishing process on the layer of metal in the presence of a polishing slurry, measuring at least a concentration of a material comprising the metal layer in the polishing slurry used during said polishing process after at least some of said polishing process has been performed, and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the metal layer. In another embodiment, the present invention is directed to a system that is comprised of a chemical mechanical polishing tool for performing a chemical mechanical polishing process on a metal layer in the presence of a polishing slurry, a concentration monitor for measuring a concentration of a material comprising the metal layer in the polishing slurry after at least one of the polishing process has been performed, and a controller for receiving the measured concentration and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the layer of metal.
摘要翻译： 通常，本发明涉及一种使用浆料废料组合物来确定在化学机械抛光过程中去除的金属的量的方法和用于实现其的系统。 在一个实施方案中，该方法包括提供具有在其上形成的金属层的基材，在抛光浆料存在下对该金属层进行化学机械抛光工艺，测量至少一种包含金属层的材料的浓度 在至少一些所述抛光工艺已经进行之后，在抛光过程中使用的抛光浆料，以及至少基于所测量的包括金属层的材料的浓度，确定在抛光过程中去除的金属层的厚度。 在另一个实施例中，本发明涉及一种系统，该系统包括用于在抛光浆料存在下对金属层进行化学机械抛光工艺的化学机械抛光工具，用于测量材料浓度的浓度监测器 在至少一次抛光处理之后，在抛光浆料中包括金属层，以及控制器，用于接收测量的浓度并确定在抛光过程中除去的金属层的厚度，至少基于所测量的浓度 该材料包括金属层。
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12.发明授权公开(公告)号：US06588007B1
公开(公告)日：2003-07-01
申请号：US09753705
申请日：2001-01-03
IPC分类号： G06F1750
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A technique for processing a wafer in a semiconductor manufacturing process are disclosed. The method comprises first collecting a set of processing rate data from a multi-station processing tool, the set including process rate data from at least two stations in the processing tool. The collected processing rate data is then communicated to a controller that autonomously compares the processing rate data to determine whether to adjust a process parameter. The method then adjusts the process parameter for at least one station to match the process endpoint for the at least one station.
摘要翻译： 公开了一种在半导体制造工艺中处理晶片的技术。 该方法包括首先从多工位处理工具收集一组处理速率数据，该组包括处理工具中至少两个站的处理速率数据。 然后将收集的处理速率数据传送到控制器，该控制器自主地比较处理速率数据以确定是否调整过程参数。 该方法然后调整至少一个站的过程参数以匹配至少一个站的过程端点。
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13.发明授权Method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and system for accomplishing same 有权对在工艺层上进行的化学机械抛光操作的终点进行建模和控制的方法以及用于实现其的系统公开(公告)号：US06534328B1
公开(公告)日：2003-03-18
申请号：US09909162
申请日：2001-07-19
IPC分类号： H01L2100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/05 , H01L21/67253
摘要： The present invention is generally directed to a method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and a system for accomplishing same. In one illustrative embodiment, the method comprises providing a first wafer having a process layer formed thereabove, determining a duration of an endpoint polishing process performed on the process layer on the wafer, providing a second wafer having a process layer formed thereabove, and modifying at least one parameter of the endpoint polishing process to be performed on the process layer formed above the second wafer based upon a variance between the determined duration of the endpoint polishing process performed on the process layer on the first wafer and a target value for the duration of the endpoint polishing process.
摘要翻译： 本发明一般涉及建模和控制在处理层上执行的化学机械抛光操作的终点的方法，以及用于实现其的系统。 在一个说明性实施例中，该方法包括提供具有在其上形成的处理层的第一晶片，确定在晶片上对处理层执行的端点抛光工艺的持续时间，提供具有形成在其上的处理层的第二晶片， 基于在所确定的在第一晶片上的处理层上执行的端点抛光工艺的持续时间与在第一晶片上的处理层的持续时间之间的差异，在第二晶片上形成的处理层上执行的端点抛光工艺的至少一个参数 端点抛光工艺。
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公开(公告)号：US08017411B2
公开(公告)日：2011-09-13
申请号：US10323530
申请日：2002-12-18
IPC分类号： H01L21/00
CPC分类号： H01L22/20 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method and an apparatus for dynamically adjusting a sampling rate relating to wafer examination. A process step is performed upon a plurality of workpieces associated with a lot. A sample rate for acquiring metrology data relating to at least one of the processed workpiece is determined. A dynamic sampling rate adjustment process is performed to adaptively modify the sample rate. The dynamic sampling rate adjustment process includes comparing a predicted process outcome and an actual process outcome and modifying the sampling rate based upon the comparison.
摘要翻译： 一种用于动态调整与晶片检查相关的采样率的方法和装置。 在与批次相关联的多个工件上执行处理步骤。 确定用于获取与所处理的工件中的至少一个相关的度量数据的采样率。 执行动态采样率调整过程以自适应地修改采样率。 动态采样率调整过程包括比较预测过程结果和实际过程结果，并根据比较修改采样率。
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公开(公告)号：US06978189B1
公开(公告)日：2005-12-20
申请号：US10156450
申请日：2002-05-28
CPC分类号： H01L21/67288 , H01L21/67253
摘要： A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.
摘要翻译： 一种用于匹配与综合计量工具相关的数据的方法和装置以及独立计量工具。 至少一个半导体晶片被处理。 基于与由综合计量工具获得的经处理的半导体晶片相关的度量数据与使用控制器由独立计量工具获取的度量数据之间的差异进行匹配的综合计量工具和/或独立计量工具。
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16.发明授权公开(公告)号：US06917849B1
公开(公告)日：2005-07-12
申请号：US10323543
申请日：2002-12-18
CPC分类号： H01L22/20
摘要： A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.
摘要翻译： 一种方法包括收集与所选半导体器件的处理相关联的第一制造参数。 对于所选择的半导体器件估计第二制造参数。 基于收集的第一制造参数和估计的第二制造参数来预测所选择的半导体器件的至少一个电特性的第一值。 系统包括数据收集单元和预测单元。 数据收集单元被配置为收集与所选择的半导体器件的处理相关联的第一制造参数。 预测单元被配置为基于所收集的第一制造参数和估计的第二制造参数来估计所选择的半导体器件的第二制造参数并且预测所选择的半导体器件的至少一个电特性的第一值。
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公开(公告)号：US06912433B1
公开(公告)日：2005-06-28
申请号：US10323554
申请日：2002-12-18
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , G05B2219/50065 , Y02P90/22
摘要： A method and apparatus are provided for determining a next tool state based on fault detection information. The method comprises receiving operational data associated with processing of a workpiece by a processing tool, determining at least a portion of noise associated with the processing of the workpiece based on analyzing the operational data and estimating a next state of the processing tool based on at least the determined portion of the noise.
摘要翻译： 提供了一种基于故障检测信息来确定下一个工具状态的方法和装置。 该方法包括：通过处理工具接收与工件的处理有关的操作数据，基于分析操作数据确定与工件的处理相关联的噪声的至少一部分，并基于至少基于估计处理工具的下一个状态 确定的噪声部分。
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18.发明授权Method and apparatus for modifying design constraints based on observed performance 失效基于观察性能修改设计约束的方法和装置公开(公告)号：US06907369B1
公开(公告)日：2005-06-14
申请号：US10425227
申请日：2003-05-02
IPC分类号： G05B19/418 , G06F17/50 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32018 , G05B2219/32101 , G05B2219/45026 , G06F17/5068 , Y02P90/22
摘要： A method for modifying design constraints based on observed performance includes measuring a characteristic of a plurality of devices manufactured in a process flow. A design constraint associated with the characteristic is defined. A performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint is generated. The design constraint is modified based on the performance metric. A manufacturing system includes a metrology tool and a design rule monitor. The metrology tool is configured to measure a characteristic of a plurality of devices manufactured in a process flow. The design rule monitor is configured to receive a design constraint associated with the characteristic, generate a performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint, and modify the design constraint based on the performance metric.
摘要翻译： 基于观察到的性能来修改设计约束的方法包括测量在处理流程中制造的多个设备的特性。 定义与特性相关的设计约束。 产生与测量特性和设计约束相关的设备性能的性能指标。 基于性能指标修改设计约束。 制造系统包括计量工具和设计规则监视器。 计量工具被配置为测量在处理流程中制造的多个装置的特性。 设计规则监视器被配置为接收与特性相关联的设计约束，根据测量的特性和设计约束生成与设备的性能相关的性能度量，并且基于性能度量来修改设计约束。
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19.发明授权Method and apparatus using integrated metrology data for pre-process and post-process control 有权使用集成度量数据进行预处理和后处理控制的方法和装置公开(公告)号：US06788988B1
公开(公告)日：2004-09-07
申请号：US10023098
申请日：2001-12-17
IPC分类号： G06F1900
CPC分类号： G05B15/02 , H01L22/20 , H01L2223/54453
摘要： A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.
摘要翻译： 一种用于获取预处理和后处理综合度量数据的方法和装置。 提供了许多半导体晶片。 执行在许多半导体晶片内的第一半导体晶片的预处理集成度量数据采集。 在从多个半导体晶片的第二半导体晶片获取预处理测量数据的过程中，至少部分地执行在第一半导体晶片上的处理操作。 响应于第一半导体晶片的处理，从第一半导体晶片获取后处理集成度量数据。 分析预处理和后处理计量数据以评估在第一半导体晶片上执行的处理操作。
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公开(公告)号：US06778873B1
公开(公告)日：2004-08-17
申请号：US10210640
申请日：2002-07-31
申请人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
发明人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
IPC分类号： G06F1900
CPC分类号： G05B19/4184 , G05B23/0281 , G05B2219/31357 , G05B2219/31363 , G05B2219/32201 , Y02P90/14 , Y02P90/22
摘要： A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller. The method further includes generating prediction data associated with processing of the next workpieces, and comparing the prediction data to processing data associated with the processing of the next workpieces to identify a possible cause of the fault.
摘要翻译： 提供了一种基于控制器输出来识别故障原因的方法和装置。 该方法包括在控制器的方向上处理至少一个工件，并检测与至少一个工件的处理相关的故障。 该方法还包括确定检测到的故障的多个可能的原因，从多个可能的原因中识别更可能的可能原因，将与所识别的更可能的可能原因相关联的故障信息提供给控制器。 该方法还包括向控制器提供与所识别的更可能的可能原因相关联的故障信息。 该方法还包括基于提供给控制器的故障信息来调整接下来要处理的一个或多个待处理工件的处理。 该方法还包括生成与下一个工件的处理相关联的预测数据，以及将预测数据与与下一个工件的处理相关联的处理数据进行比较，以识别故障的可能原因。
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