公开(公告)号：US20190226083A1

公开(公告)日：2019-07-25

申请号：US16368170

申请日：2019-03-28

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON

IPC: C23C16/44 ,  H01J37/32

Abstract: The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.

公开(公告)号：US20150252473A1

公开(公告)日：2015-09-10

申请号：US14630631

申请日：2015-02-24

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON

IPC: C23C16/44 ,  C23C16/28 ,  H01J37/32 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/4405 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30

Abstract: The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.

Abstract translation: 本公开涉及用于处理真空处理系统废气的方法和装置。 另外，公开了用于维护前级等离子体反应器子系统的方法和装置。 在一些实施例中，用于处理真空处理系统的前级管线中的废气的装置包括与处理室的前级管线连接的等离子体源，与等离子体源耦合的处理剂源，以及用于冷却排气的下游捕集器 在排气流中流和捕获颗粒。 在一些实施例中，多个前级等离子体反应器子系统与真空处理系统一起使用，并且一个前级等离子体反应器子系统可以被隔离并保持（例如，清洁），同时废气处理在另一个前级等离子体反应器子系统中继续进行，并且处理在真空中继续 处理系统。

公开(公告)号：US20150251133A1

公开(公告)日：2015-09-10

申请号：US14638871

申请日：2015-03-04

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01J19/08 ,  B01D53/46

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

Abstract translation: 描述了用于从处理室中减少含有污染物的化合物的等离子体消除过程。 等离子体消除过程采用来自诸如沉积室的处理室的气态前级流出物，并使排出物在放置在前级管路中的等离子体室内反应。 血浆将流出物中的化合物解离，将流出物转化为更良性的化合物。 减轻试剂可能有助于减轻化合物。 减排过程可能是挥发或冷凝减排过程。 代表性的挥发减压试剂包括例如CH 4，H 2 O，H 2，NF 3，SF 6，F 2，HCl，HF，Cl 2和HBr。 代表性的减压剂包括例如H 2，H 2 O，O 2，N 2，O 3，CO，CO 2，NH 3，N 2 O，CH 4及其组合。

公开(公告)号：US20230128611A1

公开(公告)日：2023-04-27

申请号：US17508493

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Colin John DICKINSON ,  Dinkesh HUDERI SOMANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/34

Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

公开(公告)号：US20190022577A9

公开(公告)日：2019-01-24

申请号：US15486938

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Monique MCINTOSH ,  Colin John DICKINSON ,  Paul E. FISHER ,  Yutaka TANAKA ,  Zheng YUAN

IPC: B01D53/32 ,  B01D53/64 ,  B01D53/70 ,  B01D53/54 ,  B01D53/76 ,  H01J37/32 ,  B01J19/08

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US20170297066A1

公开(公告)日：2017-10-19

申请号：US15485387

申请日：2017-04-12

Applicant: Applied Materials, Inc.

Inventor： Colin John DICKINSON

IPC: B08B7/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

CPC classification number: B08B7/0035 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32834 ,  H01J37/32844 ,  H01J2237/334 ,  H01L21/02057 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma abatement process that takes effluent from a processing chamber and reacts the effluent with water vapor reagent within a plasma source placed in a foreline by injecting the water vapor reagent into the foreline or the plasma source. The materials present in the effluent as well as the water vapor reagent are energized by the plasma source, converting the materials into gas species such as HF that is readily scrubbed by typical water scrubbing abatement technology. An oxygen containing gas is periodically injected into the foreline or the plasma source relative to the water vapor injection to reduce or avoid the generation of solid particles. The abatement process has good destruction removal efficiency (DRE) with minimized solid particle generation.

公开(公告)号：US20170133208A1

公开(公告)日：2017-05-11

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US20160133442A1

公开(公告)日：2016-05-12

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US20150255256A1

公开(公告)日：2015-09-10

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。