利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.033 秒)

    OXIDE AND METAL REMOVAL
    12.
    发明申请
    OXIDE AND METAL REMOVAL 有权
    氧化物和金属去除

    公开(公告)号：US20150345028A1

    公开(公告)日：2015-12-03

    申请号：US14288696

    申请日：2014-05-28

    申请人： Applied Materials, Inc.

    发明人： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC分类号： C23F1/12 ,  H01L21/3213 ,  H01J37/32

    CPC分类号： C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

    摘要： Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    摘要翻译： 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

    Even tungsten etch for high aspect ratio trenches
    13.
    发明授权
    Even tungsten etch for high aspect ratio trenches 有权
    甚至钨蚀刻用于高纵横比沟槽

    公开(公告)号：US09190293B2

    公开(公告)日：2015-11-17

    申请号：US14215417

    申请日：2014-03-17

    申请人： Applied Materials, Inc.

    发明人： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC分类号： H01L21/4763 ,  H01L21/3213 ,  H01J37/32

    CPC分类号： H01L21/32136 ,  H01J37/32357 ,  H01J2237/334

    摘要： Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.

    摘要翻译： 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。 离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。 然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

    SELECTIVE TITANIUM NITRIDE ETCHING
    14.
    发明申请
    SELECTIVE TITANIUM NITRIDE ETCHING 有权
    选择性硝酸铁蚀刻

    公开(公告)号：US20150118857A1

    公开(公告)日：2015-04-30

    申请号：US14584099

    申请日：2014-12-29

    申请人： Applied Materials, Inc.

    发明人： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32136 ,  H01J37/32357

    摘要： Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

    摘要翻译： 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

    HIGH ASPECT RATIO 3-D FLASH MEMORY DEVICE
    16.
    发明申请
    HIGH ASPECT RATIO 3-D FLASH MEMORY DEVICE 审中-公开

    公开(公告)号：US20170110475A1

    公开(公告)日：2017-04-20

    申请号：US15393105

    申请日：2016-12-28

    申请人： Applied Materials, Inc.

    发明人： Jie Liu ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC分类号： H01L27/11582 ,  H01L21/3213 ,  H01L21/67 ,  H01L27/11568

    CPC分类号： H01L27/11582 ,  C23F4/00 ,  H01J37/32357 ,  H01L21/28 ,  H01L21/32136 ,  H01L21/67225 ,  H01L27/11568

    摘要： Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.

    Oxide and metal removal
    18.
    发明授权
    Oxide and metal removal 有权
    氧化物和金属去除

    公开(公告)号：US09309598B2

    公开(公告)日：2016-04-12

    申请号：US14288696

    申请日：2014-05-28

    申请人： Applied Materials, Inc.

    发明人： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC分类号： C03C15/00 ,  C23F1/12 ,  H01J37/32 ,  H01L21/3213

    CPC分类号： C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

    摘要： Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    摘要翻译： 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

    Gas-phase tungsten etch
    19.
    发明授权
    Gas-phase tungsten etch 有权
    气相钨蚀刻

    公开(公告)号：US09299575B2

    公开(公告)日：2016-03-29

    申请号：US14215701

    申请日：2014-03-17

    申请人： Applied Materials, Inc.

    发明人： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

    IPC分类号： H01L21/302 ,  H01L21/3065

    CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

    摘要： Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

    摘要翻译： 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。