公开(公告)号：US20170092511A1

公开(公告)日：2017-03-30

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20230128297A1

公开(公告)日：2023-04-27

申请号：US18083301

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20200098547A1

公开(公告)日：2020-03-26

申请号：US16583003

申请日：2019-09-25

Applicant: Applied Materials, Inc.

Inventor： Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kalyanjit GHOSH ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: Systems and methods for a process chamber that decreases the severity and occurrence of substrate defects due to loosened scale is discussed herein. A gas distribution assembly is disposed in a process chamber and includes a faceplate with a plurality of apertures formed therethrough and a second member. The faceplate is coupled to the second member which is configured to couple to the faceplate to reduce an exposed area of the faceplate and minimize an available area for material buildup during the release of gas into the process chamber. The second member is further configured to improve the glow of precursors into the process chamber. The gas distribution assembly can be heated before and during process chamber operations, and can remain heated between process chamber operations.

公开(公告)号：US20200080198A1

公开(公告)日：2020-03-12

申请号：US16687399

申请日：2019-11-18

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Ren-Guan DUAN ,  Kalyanjit GHOSH

IPC: C23C16/44 ,  C23C16/455

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

公开(公告)号：US20180274095A1

公开(公告)日：2018-09-27

申请号：US15992330

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20170125280A1

公开(公告)日：2017-05-04

申请号：US15333345

申请日：2016-10-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Praket P. JHA ,  Krishna NITTALA

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/52 ,  H01L21/683

CPC classification number: H01L21/68742 ,  C23C16/4581 ,  H01L21/68757

Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.

公开(公告)号：US20200325577A1

公开(公告)日：2020-10-15

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20200234982A1

公开(公告)日：2020-07-23

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20190226088A1

公开(公告)日：2019-07-25

申请号：US16255120

申请日：2019-01-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Sanjeev BALUJA ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH ,  Daniel HWUNG

IPC: C23C16/455

Abstract: Embodiments herein generally relate to gas distribution apparatuses. In one aspect, the disclosure relates to a faceplate having a plurality of apertures therethrough. Thermal chokes are disposed on the faceplate radially outward of the apertures. Seals are disposed at distal ends of the thermal chokes and are thermally separated from a body of the faceplate by the thermal chokes.

公开(公告)号：US20190119816A1

公开(公告)日：2019-04-25

申请号：US16168462

申请日：2018-10-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Daniel HWUNG ,  Ashutosh AGARWAL ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH

IPC: C23C16/455 ,  C23C16/44

Abstract: Embodiments herein relate to gas distribution apparatuses. In one aspect, the disclosure herein relates to a showerhead including a body having an upper surface and a lower surface. A thermal choke is disposed adjacent a perimeter of the body. The thermal choke includes a plurality of interleaved channels. One or more apertures are disposed between the upper surface and the lower surface of the body.