公开(公告)号：US10207386B2

公开(公告)日：2019-02-19

申请号：US15046270

申请日：2016-02-17

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: B24B37/013 ,  B24B49/10 ,  H01L21/67 ,  H01L21/66 ,  H01L21/321

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

公开(公告)号：US20160158908A1

公开(公告)日：2016-06-09

申请号：US15046270

申请日：2016-02-17

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: B24B37/013 ,  B24B49/10 ,  H01L21/67

CPC classification number: B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

公开(公告)号：US20150118765A1

公开(公告)日：2015-04-30

申请号：US14066509

申请日：2013-10-29

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: H01L21/66 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: H01L22/26 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L22/14

Abstract: In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.

Abstract translation: 一方面，一种控制抛光的方法包括：在从第一基板或独立监视系统抛光第一基板之前，在第一基板上接收导电膜的初始厚度的测量，在一个或多个基板中抛光一个或多个基板 抛光系统，所述一个或多个衬底包括第一衬底，在一个或多个衬底的抛光期间，用涡流监视系统监测该一个或多个衬底以产生第一信号，确定第一信号的起始值 开始抛光第一衬底，对于在一个或多个衬底的至少一个衬底的抛光期间收集的第一信号的至少一部分，基于起始值和初始厚度的测量来确定增益，并且计算 基于第一信号和增益的第二信号。

公开(公告)号：US11199605B2

公开(公告)日：2021-12-14

申请号：US15867372

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02 ,  H01L21/67 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US20180203090A1

公开(公告)日：2018-07-19

申请号：US15867543

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/02 ,  B24B37/005 ,  B24B37/04

CPC classification number: G01R35/005 ,  B24B37/005 ,  B24B37/042 ,  C09G1/00 ,  C09G1/02

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US09205527B2

公开(公告)日：2015-12-08

申请号：US13791694

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Tzu-Yu Liu ,  Ingemar Carlsson ,  Hassan G. Iravani ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Doyle E. Bennett

IPC: B24B37/013 ,  B24B37/04 ,  B24B7/22

CPC classification number: B24B37/013 ,  B24B7/228 ,  B24B37/048

Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

Abstract translation: 一种化学机械抛光衬底的方法包括在抛光工位上抛光衬底上的层，在抛光站处用抛光工位进行抛光监测层，原位监测系统监测细长区域，并产生一个 计算所述细长区域的主轴与所述衬底的边缘的切线之间的角度，基于所述角度修改所测量的信号以产生修改的信号，以及至少一个检测抛光终点或修改 基于修改信号的抛光参数。

公开(公告)号：US20150224623A1

公开(公告)日：2015-08-13

申请号：US14179297

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G. Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC: B24B49/10 ,  B24B49/02 ,  B24B49/14 ,  B24B37/013

CPC classification number: B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.

Abstract translation: 其中，描述了在抛光过程中控制抛光的方法。 该方法包括在时间t从原位监测系统接收经历抛光的基底的导电层的厚度（t）的测量; 在时间t接收与导电层相关的测量温度T（t）; 在测量温度T（t）下计算导电层的电阻率r r; 使用计算的电阻率r来调整厚度的测量值以产生调整的测量厚度; 以及基于所调整的测量厚度检测抛光终点或抛光参数的调整。

公开(公告)号：US20150118766A1

公开(公告)日：2015-04-30

申请号：US14066571

申请日：2013-10-29

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: H01L21/66 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

Abstract translation: 控制抛光的方法包括：在第一抛光台处抛光衬底，用第一涡流监测系统监测衬底以产生第一信号，确定第一信号的结束值，以便在第一抛光站抛光衬底 抛光站，确定第一抛光站的第一温度，在第二抛光站抛光衬底，用第二涡流监测系统监测衬底以产生第二信号，确定第二信号的起始值以开始 在所述第二研磨站处抛光所述基板，基于所述结束值，所述起始值和所述第一温度确定所述第二抛光站的增益，以及基于所述第二信号和所述增益来计算第三信号。

公开(公告)号：US11079459B2

公开(公告)日：2021-08-03

申请号：US15867543

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US10562148B2

公开(公告)日：2020-02-18

申请号：US15727288

申请日：2017-10-06

Applicant: Applied Materials, Inc.

Inventor： Shih-Haur Shen ,  Kun Xu ,  Tzu-Yu Liu

IPC: B24B37/013 ,  B24B37/04 ,  B24B37/12 ,  B24B37/27 ,  B24B49/05 ,  B24B51/00 ,  H01L21/66

Abstract: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.