公开(公告)号：US20200216949A1

公开(公告)日：2020-07-09

申请号：US16647794

申请日：2018-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage ,  Rana Howlader

IPC: C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US20200071825A1

公开(公告)日：2020-03-05

申请号：US16550523

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Mark Saly ,  David Thompson ,  Yongjing Lin ,  Shih Chung Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C28/00

Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no β-hydrogen.

公开(公告)号：US10577386B2

公开(公告)日：2020-03-03

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/18 ,  C07F15/00 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20200002814A1

公开(公告)日：2020-01-02

申请号：US16456964

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C09D1/00 ,  C01G19/02 ,  C01B21/06 ,  C01B32/914 ,  C01B35/04 ,  C01B33/06 ,  C23C16/30

Abstract: Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

公开(公告)号：US10354861B2

公开(公告)日：2019-07-16

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US20190157079A1

公开(公告)日：2019-05-23

申请号：US16193594

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US20190115255A1

公开(公告)日：2019-04-18

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/285 ,  C23C16/06 ,  C23C16/56

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US20190088489A1

公开(公告)日：2019-03-21

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20180342403A1

公开(公告)日：2018-11-29

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/465 ,  H01L21/02

CPC classification number: H01L21/465 ,  H01L21/0228 ,  H01L21/02565 ,  H01L21/28194 ,  H01L21/32135

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US10109534B2

公开(公告)日：2018-10-23

申请号：US14627861

申请日：2015-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Adam Brand ,  Naomi Yoshida ,  Seshadri Ganguli ,  David Thompson ,  Mei Chang

IPC: H01L21/3205 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the first work function layer and the second feature.