公开(公告)号：US11894230B2

公开(公告)日：2024-02-06

申请号：US18101317

申请日：2023-01-25

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC: H10B41/27 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31122 ,  H01L21/31144

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US20240027912A1

公开(公告)日：2024-01-25

申请号：US17872370

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: G03F7/40 ,  G03F7/34

CPC classification number: G03F7/40 ,  G03F7/346

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

公开(公告)号：US20230360967A1

公开(公告)日：2023-11-09

申请号：US17739856

申请日：2022-05-09

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Supriya Ghosh ,  John Sudijono ,  Abhijit Basu Mallick ,  Jiecong Tang

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L27/11556 ,  H01L27/11582

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20230335391A1

公开(公告)日：2023-10-19

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallik ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

CPC classification number: H01L21/02118 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02205 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20230260800A1

公开(公告)日：2023-08-17

申请号：US17671938

申请日：2022-02-15

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Jiteng Gu ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31144 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02205

Abstract: Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

公开(公告)号：US20230235452A1

公开(公告)日：2023-07-27

申请号：US17585755

申请日：2022-01-27

Applicant: Applied Materials, Inc.

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  C23C16/455

CPC classification number: C23C16/279 ,  C23C16/45536 ,  B82Y40/00

Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

公开(公告)号：US20220131096A1

公开(公告)日：2022-04-28

申请号：US17078509

申请日：2020-10-23

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Xinke Wang ,  John Sudijono ,  Xiao Gong

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00 ,  H01L51/10

Abstract: Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

公开(公告)号：US20210111033A1

公开(公告)日：2021-04-15

申请号：US16598167

申请日：2019-10-10

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Doreen Wei Ying Yong ,  Kah Wee Ang ,  Debanjan Jana ,  Niharendu Mahapatra

IPC: H01L21/311

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.

公开(公告)号：US20250125195A1

公开(公告)日：2025-04-17

申请号：US18378828

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Mark Saly ,  Jiang Lu ,  John Sudijono ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.

公开(公告)号：US11972940B2

公开(公告)日：2024-04-30

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.