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公开(公告)号:US10347462B2
公开(公告)日:2019-07-09
申请号:US15955467
申请日:2018-04-17
Applicant: Applied Materials Israel Ltd.
Inventor: Dror Shemesh , Uri Lev , Benjamin Colombeau , Amir Wachs , Kourosh Nafisi
IPC: H01J37/22 , H01J37/28 , H01J37/244
Abstract: A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.
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公开(公告)号:US20240096591A1
公开(公告)日:2024-03-21
申请号:US18237854
申请日:2023-08-24
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh , Doron Girmonsky , Uri Hadar , Michal Eilon
IPC: H01J37/26 , H01J37/244 , H01J37/28
CPC classification number: H01J37/265 , H01J37/244 , H01J37/28 , H01J2237/24475 , H01J2237/24495 , H01J2237/24507
Abstract: Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes: (i) an electron beam (e-beam) source for projecting e-beams at each of a plurality of landing energies on an inspected sample; (ii) an electron sensor for obtaining a measured set of electron intensities pertaining to each of the landing energies; and (iii) processing circuitry for determining a set of structural parameters, which characterizes an internal geometry and/or a composition of the inspected sample, based on the measured set of electron intensities and taking into account reference data indicative of an intended design of the inspected sample.
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公开(公告)号:US20240094150A1
公开(公告)日:2024-03-21
申请号:US17947481
申请日:2022-09-19
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh , Doron Girmonsky , Uri Hadar , Michal Eilon
IPC: G01N23/2251 , H01J37/29
CPC classification number: G01N23/2251 , H01J37/292 , G01N2223/053 , G01N2223/305 , G01N2223/306 , H01J2237/22 , H01J2237/2815
Abstract: Disclosed herein is a computer-based method for non-destructive depth-profiling of samples. The method includes a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample, which penetrates the sample to a respective depth determined by the landing energy, and (ii) sensing electrons returned from the sample, thereby obtaining a respective sensed electrons data set. The data analysis operation includes generating from the sensed electrons data sets a concentration map, which characterizing at least a vertical dimension of the sample.
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公开(公告)号:US11543368B2
公开(公告)日:2023-01-03
申请号:US17153765
申请日:2021-01-20
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh
IPC: G01N23/2252 , G01N23/2206
Abstract: A method for x-ray based evaluation of a status of a structure of a substrate, the method may include acquiring an electron image of a region of the substrate, the region comprises the structure; acquiring an x-ray image of the structure; and evaluating the status of the structure, wherein the evaluating is based at least on a number of x-ray photons that were emitted from the structure.
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公开(公告)号:US11423529B2
公开(公告)日:2022-08-23
申请号:US16794172
申请日:2020-02-18
Applicant: Applied Materials Israel Ltd.
Inventor: Doron Girmonsky , Rafael Ben Ami , Boaz Cohen , Dror Shemesh
Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.
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公开(公告)号:US09490101B2
公开(公告)日:2016-11-08
申请号:US14658993
申请日:2015-03-16
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Yuval Gronau , Ishai Schwarzband , Benzion Sender , Dror Shemesh , Ran Schleyen , Ofir Greenberg
CPC classification number: H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2803
Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.
Abstract translation: 一种用于扫描对象的系统,系统可以包括(a)带电粒子光学器件,其被配置为:以带电粒子束和第一扫描速率扫描物体的区域的第一感兴趣区域(ROI) ; 检测由于第一ROI的扫描而产生的第一粒子; 用所述带电粒子束以第二扫描速率扫描所述物体区域的第二ROI; 其中所述第二扫描速率低于所述第一扫描速率; 其中第一ROI与所述第二ROI相差至少一个参数; 检测由于第二ROA的扫描而产生的第二颗粒; 以及(b)处理器,被配置为响应于所述第一和第二粒子而产生所述区域的至少一个图像。
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公开(公告)号:US20160276127A1
公开(公告)日:2016-09-22
申请号:US14658993
申请日:2015-03-16
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Yuval Gronau , Ishai Schwarzband , Benzion Sender , Dror Shemesh , Ran Schleyen , Ofir Greenberg
CPC classification number: H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2803
Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.
Abstract translation: 一种用于扫描对象的系统,系统可以包括(a)带电粒子光学器件,其被配置为:以带电粒子束和第一扫描速率扫描物体的区域的第一感兴趣区域(ROI) ; 检测由于第一ROI的扫描而产生的第一粒子; 用所述带电粒子束以第二扫描速率扫描所述物体区域的第二ROI; 其中所述第二扫描速率低于所述第一扫描速率; 其中第一ROI与所述第二ROI相差至少一个参数; 检测由于第二ROA的扫描而产生的第二颗粒; 以及(b)处理器,被配置为响应于所述第一和第二粒子而产生所述区域的至少一个图像。
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公开(公告)号:US11022565B2
公开(公告)日:2021-06-01
申请号:US16405920
申请日:2019-05-07
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh , Eugene T. Bullock , Adi Boehm , Gurjeet Singh
Abstract: A method for determining a defect material element, the method includes (a) acquiring, by a charged particle beam system and by applying a spectroscopy process, an electromagnetic emission spectrum of a part of a defect; (b) acquiring, by the charged particle beam system, a backscattered electron (BSE) image of an area that includes the defect; and (c) determining a defect material element. The determining of the defect material element includes: determining whether an ambiguity exists in the electromagnetic emission spectrum, and resolving the ambiguity based on the BSE image, when it is determined that the ambiguity exists.
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公开(公告)号:US09899185B1
公开(公告)日:2018-02-20
申请号:US15134329
申请日:2016-04-20
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh , Mor Baram
IPC: H01J37/244 , H01J37/28 , H01J37/26
CPC classification number: H01J37/261 , H01J37/244 , H01J37/28
Abstract: A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.
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公开(公告)号:US09805909B1
公开(公告)日:2017-10-31
申请号:US15271105
申请日:2016-09-20
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Dror Shemesh , Lei Zhong
IPC: G01N23/22 , H01J37/244 , G01N23/225
CPC classification number: H01J37/244 , G01N23/203 , G01N23/2252 , G01N2223/053 , G01N2223/079 , G01N2223/102 , H01J2237/2445 , H01J2237/24592
Abstract: An inspection system that includes charged particle optics that irradiate a bottom of a hole with a charged particle beam propagated along an optical axis, an energy dispersive x-ray detector and a processor. The x-ray detector detects x-ray photons emitted from the bottom of the hole and generates detection signals indicative of the x-ray photons. The processor processes the detection signals to provide an estimate of the bottom of the hole.
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