公开(公告)号：US6086990A

公开(公告)日：2000-07-11

申请号：US721320

申请日：1996-09-26

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： C04B37/02 ,  C04B35/584 ,  C04B35/593 ,  C04B41/52 ,  C04B41/89 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  H05K1/03 ,  H05K3/38 ,  B32B15/00

CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B41/52 ,  C04B41/89 ,  H01L23/15 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3025 ,  H05K1/0306 ,  Y10T428/265

摘要： Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

摘要翻译： 公开了一种高导热氮化硅电路基板，其包括在25℃下的热导率为60W / m×K以上的氮化硅陶瓷板和通过中间层与氮化硅陶瓷板接合的金属电路板，该中间层含有 氧和选自钛，锆，铪，铌和铝的至少一种元素，以及使用该元素的半导体器件。

公开(公告)号：US5629666A

公开(公告)日：1997-05-13

申请号：US445725

申请日：1995-05-22

申请人： Motomasa Imai ,  Naoki Shutoh ,  Fumio Ueno

发明人： Motomasa Imai ,  Naoki Shutoh ,  Fumio Ueno

IPC分类号： H01C7/108 ,  H01C7/10

CPC分类号： H01C7/108

摘要： Disclosed is a power resistor which has a large heat capacity per unit volume and an appropriate and stable electrical resistance, and in which the resistance changes little with time due to surge absorption. This power resistor includes a sintered body containing aluminum oxide and carbon, and a pair of electrodes formed on the two opposing surfaces of the sintered body. This sintered body consists of first regions containing a small amount of carbon or not containing carbon and second regions containing a larger amount of carbon than in the first regions and so arranged as to be connected to the electrodes.

摘要翻译： 公开了一种功率电阻器，其具有每单位体积的大的热容量和适当且稳定的电阻，并且由于浪涌吸收，电阻随时间变化很小。 该功率电阻器包括含有氧化铝和碳的烧结体以及形成在烧结体的两个相对表面上的一对电极。 该烧结体由含有少量碳或不含碳的第一区域和包含比第一区域中的碳含量更大的第二区域组成，并且被布置为连接到电极。

公开(公告)号：US5509558A

公开(公告)日：1996-04-23

申请号：US275523

申请日：1994-07-15

申请人： Motomasa Imai ,  Naoki Shutoh ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Hideo Ohkuma ,  Yuji Katsumura ,  Masaki Kobayashi ,  Toshiyuki Takahashi

发明人： Motomasa Imai ,  Naoki Shutoh ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Hideo Ohkuma ,  Yuji Katsumura ,  Masaki Kobayashi ,  Toshiyuki Takahashi

IPC分类号： C04B35/628 ,  H01C1/142 ,  H01C7/00 ,  H01H33/16 ,  H01C7/10 ,  H01C8/00

CPC分类号： C04B35/6264 ,  C04B35/01 ,  C04B35/013 ,  C04B35/053 ,  C04B35/103 ,  C04B35/117 ,  C04B35/14 ,  C04B35/185 ,  C04B35/195 ,  C04B35/20 ,  C04B35/44 ,  C04B35/443 ,  C04B35/453 ,  C04B35/46 ,  C04B35/481 ,  C04B35/62839 ,  C04B35/634 ,  C04B35/63404 ,  C04B35/63424 ,  C04B35/63436 ,  C04B35/63444 ,  C04B35/63448 ,  C04B35/63456 ,  C04B35/63468 ,  C04B35/636 ,  C04B35/6365 ,  H01C1/142 ,  H01C7/001 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/349 ,  C04B2235/424 ,  C04B2235/48 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/96

摘要： A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.

摘要翻译： 一种金属氧化物电阻器，用于抑制在高温或高湿气氛中使用的电阻率变化。 这种金属氧化物电阻器包括烧结体，其中平均粒径为1μm以下的碳粒子以0.05〜3重量％的量存在于金属氧化物粒子的晶界中，电极形成在至少两个 烧结体的相对表面。

公开(公告)号：US5254816A

公开(公告)日：1993-10-19

申请号：US859868

申请日：1992-03-30

申请人： Naoki Shutoh ,  Motomasa Imai ,  Fumio Ueno ,  Hideyasu Andoh ,  Shoji Kozuka ,  Hiroshi Endo ,  Iwao Mitsuishi

发明人： Naoki Shutoh ,  Motomasa Imai ,  Fumio Ueno ,  Hideyasu Andoh ,  Shoji Kozuka ,  Hiroshi Endo ,  Iwao Mitsuishi

IPC分类号： H01C7/10 ,  H01C7/112 ,  H01H33/16

CPC分类号： H01H33/165 ,  H01C7/112

摘要： According to this invention, there is disclosed a compact power circuit breaker having a large breaking capacity and stable breaking performance due to a compact closing resistor unit having high performance. The power circuit breaker includes a main switching mechanism having an arc extinguishing function, an auxiliary switching mechanism parallelly connected to the main switching mechanism and having an arc extinguishing function, and a closing resistor unit connected in series with the auxiliary switching mechanism and incorporated with a resistor containing zinc oxide (ZnO) as a main component and titanium figured out as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol% and nickel figured out as nickel oxide (NiO) in an amount of 0.5 to 30 mol. % as sub-components.

公开(公告)号：US4860243A

公开(公告)日：1989-08-22

申请号：US41696

申请日：1987-04-23

申请人： Fumio Ueno ,  Takeshi Yamakawa ,  Yuji Shirai

发明人： Fumio Ueno ,  Takeshi Yamakawa ,  Yuji Shirai

IPC分类号： G06G7/14 ,  G06N7/04 ,  H01L27/06 ,  H01L27/118 ,  H03K19/00 ,  H03K19/094 ,  G06F7/00 ,  G06F15/48

CPC分类号： H01L27/0629 ,  G06G7/14 ,  G06N7/043 ,  H01L27/11807 ,  H03K19/00 ,  H03K19/094 ,  Y10S706/90

摘要： A fuzzy logic circuit comprising a current mirror comprising an FET, a first input current source connected to the input side of the current mirror, a second input current source, a wired OR connected at its input side to the output side of the current mirror and to the second input current source, and an output terminal connected to the output side of the wired OR.

摘要翻译： 一种模糊逻辑电路，包括电流镜，其包括FET，连接到电流镜的输入侧的第一输入电流源，第二输入电流源，在其输入侧连接到电流镜的输出侧的有线OR，以及 到第二输入电流源，以及连接到有线OR的输出侧的输出端子。

公开(公告)号：US3999846A

公开(公告)日：1976-12-28

申请号：US597908

申请日：1975-07-21

申请人： Yoshiharu Sone ,  Fumio Ueno

发明人： Yoshiharu Sone ,  Fumio Ueno

IPC分类号： G06K17/00 ,  G03B23/12

CPC分类号： G06K17/0019

摘要： In an information search device for searching for any desired information in a film provided with a series of information frames, frame index marks and document index marks formed along the information frames on the opposite sides thereof, there is provided a drive motor for transporting the film, a light source system for irradiating the film, a photoelectric converter element for detecting the frame index marks, a second photoelectric converter element for detecting the document index marks, a gate circuit for receiving the detection signals from the converter elements to selectively pass one of those detection signals, a counter for counting the detection signals passed through the gate circuit, and a brake mechanism for stopping the transport of the film when the counter has counted up a number of detection signals corresponding to the search number of the desired information.

摘要翻译： 在用于搜索具有一系列信息帧，帧索引标记和在其相对侧的信息帧上形成的文档索引标记的胶片中的任何所需信息的信息搜索装置中，提供了一种用于传送胶片的驱动电机 ，用于照射胶片的光源系统，用于检测帧索引标记的光电转换元件，用于检测文档索引标记的第二光电转换元件，用于接收来自转换器元件的检测信号的门电路，以选择性地通过 这些检测信号，用于对通过门电路的检测信号进行计数的计数器，以及当计数器对与所需信息的搜索号相对应的检测信号计数时停止胶片传送的制动机构。

公开(公告)号：US5616956A

公开(公告)日：1997-04-01

申请号：US524906

申请日：1995-09-07

申请人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

发明人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

IPC分类号： H05K1/09 ,  C04B35/581 ,  C04B41/87 ,  C04B41/88 ,  C04B41/89 ,  H01L25/16 ,  H05K1/03 ,  H05K3/46 ,  H01L23/02 ,  C04B35/58 ,  H01L23/48 ,  H01L29/62

CPC分类号： H01L25/16 ,  C04B35/581 ,  H01L2924/0002

摘要： Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

摘要翻译： 公开了一种电路基板和施加电路基板的半导体器件。 电路基板具有绝缘层和导电层。 绝缘层由包含氮化铝的烧结氮化铝组合物组成; 由包含元素的化合物给出的第一组分，所述元素选自元素周期表的IIa族元素和IIIa族元素; 由简单的硼或硼化合物给出的第二组分; 并且第三组分由简单的锰或锰化合物产生。 导电层包含：由金属或导电化合物给出的导电组分，用于显示导电性; 氮化铝; 第一部分; 第二部分; 和第三个组件。 半导体器件具有上述电路基板，安装在电路基板上的半导体元件和用密封玻璃紧密地结合到电路基板上的盖以覆盖半导体元件。

公开(公告)号：US5409869A

公开(公告)日：1995-04-25

申请号：US153970

申请日：1993-11-18

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

IPC分类号： C04B35/581 ,  H01B3/12 ,  H01L23/15

CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24917

摘要： Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

摘要翻译： 公开了一种具有高导热性和高强度的氮化铝烧结体，其可以通过低温，短时间烧结制造。 该氮化铝烧结体的氮化铝粒子的平均粒径为2μm以下，导热率为80W / m·K以上，相对密度为98％以上。

公开(公告)号：US5280850A

公开(公告)日：1994-01-25

申请号：US961845

申请日：1992-10-16

申请人： Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno ,  Hiroshi Komorita

发明人： Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno ,  Hiroshi Komorita

IPC分类号： H05K1/03 ,  H01L21/48 ,  H05K3/38 ,  H05K3/00 ,  H05K3/02

CPC分类号： H05K3/38 ,  H01L21/4839 ,  H05K1/0306 ,  H05K2201/0355 ,  Y10T29/49155

摘要： According to this invention, there is provided a method of manufacturing a highly reliable circuit board in which a copper member is strongly, directly bonded to a substrate made of an aluminum nitride sintered body, thereby obtaining high peel strength. The method of manufacturing the circuit board includes the steps of bringing a copper member containing 100 to 1,000 ppm of oxygen into contact with an oxide layer having a thickness of 0.1 to 5 .mu.m formed on a surface of a substrate made of an aluminum nitride sintered body, and heating the substrate in an inert gas atmosphere containing 1 to 100 ppm of oxygen at a temperature not more than a temperature corresponding to a liquidus including a pure copper melting point of a hypoeutectic region of a two-component phase diagram of Cu-Cu.sub.2 O and not less than a temperature corresponding to a eutectic line obtained by connecting a line corresponding to copper and a line corresponding to a cuporus oxide composition, and directly bonding the copper member to the substrate.

摘要翻译： 根据本发明，提供了一种制造高可靠性电路板的方法，其中铜构件牢固地直接接合到由氮化铝烧结体制成的衬底上，从而获得高剥离强度。 制造电路板的方法包括以下步骤：将含有100-1000ppm氧的铜构件与由铝制成的基板的表面形成的厚度为0.1〜5（my）m的氧化物层接触 氮化物烧结体，在含有1〜100ppm的氧的惰性气体气氛中，在不高于对应于液相线的温度的温度下加热所述基板，所述液相线包括双组分相图的亚共晶区域的纯铜熔点 Cu-Cu 2 O，并且不低于对应于通过连接对应于铜的线和对应于氧化铜组合物的线而获得的共晶线的温度，并且将铜构件直接接合到衬底。

公开(公告)号：US5204080A

公开(公告)日：1993-04-20

申请号：US545691

申请日：1990-06-29

申请人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Yoshiko Goto ,  Fumio Ueno

发明人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Yoshiko Goto ,  Fumio Ueno

IPC分类号： C04B35/581 ,  C04B37/00

CPC分类号： C04B35/581

摘要： An aluminum nitride structure is prepared by placing an oxygen-trapping substance at at least one position on an aluminum nitride substrate having a first concentration of solution oxygen, and heating the resultant structure in a non-oxidizing atmosphere to locally reduce the first concentration of solution oxygen in said aluminum nitride substrate under said oxygen-trapping substance to a second concentration of solution oxygen by trapping the solution oxygen in the oxygen-trapping substance, thereby forming an aluminum nitride structure in which at least one region of the aluminum nitride structure corresponding to the position of said oxygen-trapping substance, which position has said second oxygen concentration, is integrally formed with aluminum nitride regions having said first concentration of solution oxygen. The aluminum nitride structure of the present invention exhibits anisotropic physical properties.

摘要翻译： 通过在具有第一浓度溶液氧的氮化铝衬底上的至少一个位置放置氧捕获物质并在非氧化性气氛中加热所得结构以局部地降低溶液的第一浓度来制备氮化铝结构 在所述氧捕获物质下的所述氮化铝衬底中的氧气通过捕集氧吸收物质中的氧气而捕获到第二浓度的溶液氧，由此形成氮化铝结构，其中至少一个氮化铝结构区域对应于 所述氧捕获物质的位置具有所述第二氧浓度，与具有所述第一浓度溶液氧的氮化铝区域一体形成。 本发明的氮化铝结构显示出各向异性的物理性质。