公开(公告)号：US06279502B1

公开(公告)日：2001-08-28

申请号：US09182631

申请日：1998-10-30

申请人： Tsukasa Azuma

发明人： Tsukasa Azuma

IPC分类号： B05C1102

CPC分类号： G03F7/3021 ,  Y10S204/05

摘要： A semiconductor device is fabricated by the steps of coating an underlayer formed on a semiconductor substrate with chemically amplified resist, exposing the resist to light, bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline developing solution for conducting development to form a resist pattern, and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.

摘要翻译： 通过以下步骤制造半导体器件：通过化学放大抗蚀剂涂覆在半导体衬底上形成的底层，将抗蚀剂曝光，使抗蚀剂与碱性显影溶液接触，同时向碱性显影液施加磁场，以进行导电 显影以形成抗蚀剂图案，并且使用抗蚀剂图案作为掩模来蚀刻半导体衬底上的底层。

公开(公告)号：US6051369A

公开(公告)日：2000-04-18

申请号：US4390

申请日：1998-01-08

申请人： Tsukasa Azuma ,  Takashi Sato

发明人： Tsukasa Azuma ,  Takashi Sato

IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/768 ,  G03F7/00

CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276

摘要： A lithography process includes a step of forming an antireflective coating film on a substrate. A film is formed on the antireflective film and a radiation sensitive film is formed on the film. The radiation sensitive film is selectively exposed. During the selective exposing, the antireflective film covers the lower surface of the portion of film on which the radiation sensitive film is formed, and the antireflective coating film reduces reflections of radiation during the selective exposing of the radiation sensitive film. A fabrication process using the lithography process is also described.

摘要翻译： 光刻工艺包括在衬底上形成抗反射涂层的步骤。 在抗反射膜上形成膜，在膜上形成辐射敏感膜。 曝光敏感膜被选择性曝光。 在选择性曝光期间，防反射膜覆盖其上形成有辐射敏感膜的膜的部分的下表面，并且抗反射涂膜在放射敏感膜的选择性曝光期间减少了辐射的反射。 还描述了使用光刻工艺的制造工艺。

公开(公告)号：US5879863A

公开(公告)日：1999-03-09

申请号：US787390

申请日：1997-01-22

申请人： Tsukasa Azuma ,  Masaki Narita ,  Katsuya Okumura

发明人： Tsukasa Azuma ,  Masaki Narita ,  Katsuya Okumura

IPC分类号： G03F7/004 ,  G03F7/085 ,  G03F7/11 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/085

摘要： Disclosed is a method of forming a pattern, comprising the steps of forming an underlying film on a semiconductor substrate, bringing a vapor of a neutralizer, which generates an acid upon exposure to light, into contact with the surface of the underlying film so as to form a primer layer, coating the primer layer with a chemical amplification resist, and selectively exposing the resist layer to light, followed by developing to form a resist pattern.

摘要翻译： 公开了一种形成图案的方法，包括以下步骤：在半导体衬底上形成下面的膜，使在暴露于光时产生酸的中和剂的蒸汽与下面的膜的表面接触，从而 形成底漆层，用化学放大抗蚀剂涂覆底漆层，并将抗蚀剂层选择性地曝光，随后显影以形成抗蚀剂图案。

公开(公告)号：US5815247A

公开(公告)日：1998-09-29

申请号：US531767

申请日：1995-09-21

申请人： Bernhard Poschenrieder ,  Takashi Sato ,  Tsukasa Azuma

发明人： Bernhard Poschenrieder ,  Takashi Sato ,  Tsukasa Azuma

IPC分类号： G03F7/20 ,  H01L21/027 ,  G03B27/42 ,  G03B27/54 ,  G03B27/72

CPC分类号： G03F7/70558 ,  G03F7/2022 ,  G03F7/701 ,  G03F7/70566

摘要： A system and method of avoiding pattern shortening without resorting to generating a mask with a bias solve the direction dependent differences in exposure behavior in photolithography processes in the manufacture of semiconductor devices. Instead of designing a biased mask to solve the exposure problem, the pattern shortening effect is avoided by influencing the exposure process itself. By using an off axis illumination technique, the exposure is separated into different directions. In one embodiment, off axis illumination is applied in combination with special dipole apertures (i.e., two openings). The exposure is done in two or more parts, whereby the aperture is twisted between exposures. In another embodiment, off axis illumination is used in combination with special polarizer apertures. As with the first embodiment, the exposure is done in two or more parts, but in this case with differently polarized light.

摘要翻译： 避免图案缩短的系统和方法，而不用借助于产生具有偏置的掩模来解决半导体器件的制造中光刻工艺中的曝光行为的方向相关差异。 不是设计偏置掩模来解决曝光问题，而是通过影响曝光过程本身来避免图案缩短效果。 通过使用离轴照明技术，将曝光分离成不同的方向。 在一个实施例中，离轴照明与特殊偶极子孔（即两个开口）组合施加。 曝光是在两个或更多部分进行的，由此孔径在曝光之间扭转。 在另一个实施例中，离轴照明与特殊的偏振器孔组合使用。 与第一实施例一样，曝光在两个或更多个部分中进行，但是在这种情况下以不同的偏振光进行曝光。

公开(公告)号：US5560788A

公开(公告)日：1996-10-01

申请号：US461404

申请日：1995-06-05

申请人： Masayuki Yamada ,  Yoichi Tsuda ,  Ryuichi Ishii ,  Eiji Maeda ,  Tsukasa Azuma

发明人： Masayuki Yamada ,  Yoichi Tsuda ,  Ryuichi Ishii ,  Eiji Maeda ,  Tsukasa Azuma

IPC分类号： C22C38/00 ,  C22C38/22 ,  C22C38/30 ,  C22C38/54 ,  C22C38/18

CPC分类号： C22C38/30 ,  C22C38/22

摘要： A heat resisting steels comprising, on percentage by weight basis, 0.05 to 0.2% of C, not more than 1.0% of Ni, 9 to 13% of Cr, 0.05 to 1% of Mo, 0.05 to 0.3% of V, 1 to 3% of W, 1 to 5% of Co, 0.01 to 0.1% of N, at least one member selected from 0.01 to 0.15% of Nb, 0.01 to 0.15% of Ta, 0.003 to 0.03% of a rare earth element, 0.003 to 0.03% of Ca and 0.003 to 0.03% of B, and the remainder of Fe and unavoidable impurities have enhanced high temperature characteristics and are suitable for use in parts of turbine such as turbine rotors, turbine blades, turbine disks and bolts.

摘要翻译： 一种耐热钢，其以重量％计含有0.05％至0.2％的C，不超过1.0％的Ni，9至13％的Cr，0.05至1％的Mo，0.05至0.3％的V，1至 3％的W，1〜5％的Co，0.01〜0.1％的N，选自0.01〜0.15％的Nb，0.01〜0.15％的Ta，0.003〜0.03％的稀土元素，0.003 至0.03％的Ca和0.003〜0.03％的B，其余的Fe和不可避免的杂质具有提高的高温特性，并且适用于涡轮机的部件，例如涡轮转子，涡轮叶片，涡轮盘和螺栓。

公开(公告)号：US5444732A

公开(公告)日：1995-08-22

申请号：US243741

申请日：1994-05-17

申请人： Tomoo Takenouchi ,  Yoshiaki Ichinomiya ,  Junji Ishizaka ,  Junji Itagaki ,  Shuzo Ohhashi ,  Tsukasa Azuma ,  Yasuhiko Tanaka

发明人： Tomoo Takenouchi ,  Yoshiaki Ichinomiya ,  Junji Ishizaka ,  Junji Itagaki ,  Shuzo Ohhashi ,  Tsukasa Azuma ,  Yasuhiko Tanaka

IPC分类号： C22B9/18 ,  H05B3/60

CPC分类号： C22B9/18 ,  Y10T29/4932

摘要： An object of the present invention is to provide an ingot wherein occurrence is prevented when an electroslag remelting method is used for producing a large ingot and which a super alloy is sensitive to segragation. According to the present invention, the electrode for electroslag remelting method has a hole formed along an axial direction in the core of an electrode. Therefore, the molten pool is made shallow so that flat and segregation is prevented from occurring. Consequently, an ESR ingot of good quality is accomplished with an excellent surface and is free from segregation. Moreover, an electrode melting rate is increasing and efficiency is improved.

摘要翻译： 本发明的目的是提供一种锭，其中当电渣重熔方法用于生产大锭并且超合金对分解敏感时，防止发生。 根据本发明，用于电渣重熔方法的电极在电极芯中具有沿轴向形成的孔。 因此，使熔池变浅，防止发生平坦和偏析。 因此，质量好的ESR锭具有优异的表面并且没有分离。 此外，电极熔化速率提高，效率提高。

公开(公告)号：US20120214272A1

公开(公告)日：2012-08-23

申请号：US13231453

申请日：2011-09-13

申请人： Tsukasa Azuma ,  Ikuo Yoneda ,  Akiko Mimotogi ,  Ryoichi Inanami ,  Mitsunaga Saito ,  Hiroki Iwanaga ,  Akiko Hirao

发明人： Tsukasa Azuma ,  Ikuo Yoneda ,  Akiko Mimotogi ,  Ryoichi Inanami ,  Mitsunaga Saito ,  Hiroki Iwanaga ,  Akiko Hirao

IPC分类号： H01L31/18

CPC分类号： H01L51/0024 ,  H01L51/42 ,  Y02E10/549 ,  Y02P70/521

摘要： Certain embodiments provide a method of manufacturing an organic thin film solar cell comprising forming, on a first electrode, a first transport layer having an uneven pattern and a photoelectric conversion layer provided on a surface of the uneven pattern, forming a second transport layer on a second electrode, and bringing the uneven pattern having the photoelectric conversion layer is formed thereon into contact with the second transport layer to mold the second transport layer.

摘要翻译： 某些实施方案提供一种制造有机薄膜太阳能电池的方法，包括在第一电极上形成具有不均匀图案的第一传输层和设置在不均匀图案的表面上的光电转换层，在第一电极上形成第二传输层 第二电极，并且使具有光电转换层的不均匀图案形成在其上与第二传输层接触以模制第二传输层。

公开(公告)号：US20120180912A1

公开(公告)日：2012-07-19

申请号：US13498057

申请日：2010-09-24

申请人： Yoshihiro Gotoh ,  Shinji Tanaka ,  Tsukasa Azuma

发明人： Yoshihiro Gotoh ,  Shinji Tanaka ,  Tsukasa Azuma

IPC分类号： C21D6/00 ,  C22C38/44

CPC分类号： C22C38/44 ,  C21D6/00 ,  C21D6/001 ,  C22C38/001 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/46

摘要： A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.

摘要翻译： 本发明的高强度，高韧性的铸钢材料，具有C：0.10〜0.20质量％，Si：0.10〜0.50质量％，Mn：0.40〜1.20质量％，2.00〜3.00质量％ Ni，0.20〜0.70质量％的Cr和0.10〜0.50质量％的Mo，还含有Fe和不可避免的杂质。 本发明的高强度高韧性铸钢材料是通过对上述组成的锭进行1000〜1100℃的退火，在850〜950℃淬火，在610〜670℃回火， 然后如果需要，在小于610℃的应力消除退火

公开(公告)号：US06576375B1

公开(公告)日：2003-06-10

申请号：US09671678

申请日：2000-09-28

申请人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

发明人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

IPC分类号： G03F900

CPC分类号： G03F1/62 ,  G03F1/46 ,  G03F1/48 ,  G03F1/50 ,  G03F1/58

摘要： A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.

摘要翻译： 光掩模包括透明基板，在透明基板的主表面上依次层叠有氧化铬膜，铬膜和氧化铬膜的防反射结构，形成在透明基板上的防反射膜的LiF膜 第一氧化铬的表面和氧化铬膜与透明基板的界面，以及在氧化铬膜的表面上形成的旋涂玻璃膜。

公开(公告)号：US6096484A

公开(公告)日：2000-08-01

申请号：US951112

申请日：1997-10-15

申请人： Tsukasa Azuma

发明人： Tsukasa Azuma

IPC分类号： G03F7/039 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

CPC分类号： G03F7/265

摘要： A chemically amplified resist is applied to a semiconductor substrate and subjected to post-apply bake, and exposed to light, then, the resist is treated with a vapor of an organic solvent such as PGMEA. By treating with the vapor of the organic solvent, acid diffusion in the resist in the post-exposure bake is suppressed, and a resist pattern having an excellent profile is obtained by development.

摘要翻译： 将化学放大抗蚀剂施加到半导体衬底上并进行后施加烘烤并曝光，然后用有机溶剂如PGMEA的蒸气处理抗蚀剂。 通过用有机溶剂的蒸气处理，抑制后曝光烘烤中的抗蚀剂中的酸扩散，并且通过显影获得具有优异外形的抗蚀剂图案。