摘要:
A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.
摘要:
A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.
摘要:
A forging heat resistant steel of an embodiment contains in percent by mass C: 0.05-0.2, Si: 0.01-0.1, Mn: 0.01-0.15, Ni: 0.05-1, Cr: 8 or more and less than 10, Mo: 0.05-1, V: 0.05-0.3, Co: 1-5, W: 1-2.2, N: 0.01 or more and less than 0.015, Nb: 0.01-0.15, B: 0.003-0.03, and a remainder comprising Fe and unavoidable impurities.
摘要:
New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.
摘要:
According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.
摘要:
According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要:
An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.2 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby γ′ phase (Ni3Al) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650° C. or more.
摘要:
In the thermal power system, the electricity production efficiency may be improved by providing turbine members having the improved high temperature characteristic over the corresponding prior art turbine members. Turbine members may be provided by using high resistant steels composed of any one or ones selected from the group consisting of the components, including 0.08 to 0.13% of carbon (C), 8.5 to 9.8% of chromium (Cr), 0 to 1.5% of molybdenum (Mo), 0.10 to 0.25% of vanadium (V), 0.03 to 0.08% of niobium (Nb), 0.2 to 5.0% of tungsten (W), 1.5 to 6.0% of cobalt (Co), 0.002 to 0.015% of boron (B), 0.015 to 0.025% of nitrogen (N), and optionally, 0.01 to 3.0% of rhenium (Re), 0.1 to 0.50% of silicon (Si), 0.1 to 1.0% of manganese (Mo), 0.05 to 0.8% of nickel (Ni) and 0.1 to 1.3% of cupper. The long-time creep strength may be improved by using those high resistant steels for turbine rotors, turbine members and the like, which enable the steam temperature to be higher, thereby improving the electricity production efficiency in the thermal power system. The accelerated creep inhibitor parameter is provided for controlling the reduction in the creep strength so that the high creep strength can be maintained for the extended period of time.
摘要:
According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.
摘要:
A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer.A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.