公开(公告)号：US20240361628A1

公开(公告)日：2024-10-31

申请号：US18768052

申请日：2024-07-10

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Changhan HSIEH ,  Shipei LI ,  Jiayu HE ,  Xin GU ,  Ce NING ,  Zhengliang LI

IPC: G02F1/133 ,  G02F1/1335 ,  G06F1/16 ,  H10K30/88

CPC classification number: G02F1/13318 ,  G02F1/133509 ,  G06F1/1652 ,  H10K30/88

Abstract: A photodetection backplane, a liquid crystal display panel and a liquid crystal display apparatus are provided. The photodetection backplane includes: a base substrate; a first organic switching unit arranged at a side of the base substrate; and an organic photodetector arranged at a same side of the base substrate as the first organic switching unit. The organic photodetector is electrically connected to the first organic switching unit, and at least one film layer of the organic photodetector and a film layer of the first organic switching unit are arranged in a same layer and made of a same material.
(FIG. 1)

公开(公告)号：US20240297243A1

公开(公告)日：2024-09-05

申请号：US18026833

申请日：2022-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Hehe HU ,  Zhengliang LI ,  Nianqi YAO ,  Jie HUANG ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/739 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/73

CPC classification number: H01L29/7391 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/7311

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

公开(公告)号：US20240234658A1

公开(公告)日：2024-07-11

申请号：US17927792

申请日：2021-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Qi QI

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/124

Abstract: A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.

公开(公告)号：US20240204004A1

公开(公告)日：2024-06-20

申请号：US17910133

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Yan QU ,  Jiayu HE ,  Kun ZHAO ,  Jie HUANG ,  Zhengliang LI ,  Ce NING ,  Dongfang WANG ,  Fengjuan LIU ,  Nianqi YAO ,  Feifei LI ,  Shunhang ZHANG ,  Yunsik IM ,  Liping LEI

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259 ,  H01L27/1222

Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.

公开(公告)号：US20240188373A1

公开(公告)日：2024-06-06

申请号：US17795243

申请日：2021-09-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H10K59/65 ,  H10K59/12 ,  H10K59/121 ,  H10K59/80 ,  H10K71/00

CPC classification number: H10K59/65 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/874 ,  H10K71/00

Abstract: Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

公开(公告)号：US20210167143A1

公开(公告)日：2021-06-03

申请号：US16835722

申请日：2020-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Xue LIU ,  Zhengliang LI

IPC: H01L27/32 ,  H01L31/105 ,  H01L31/18

Abstract: The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.

公开(公告)号：US20250151504A1

公开(公告)日：2025-05-08

申请号：US19017860

申请日：2025-01-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Changhan HSIEH ,  Wei YANG ,  Liwen DONG ,  Jiayu HE ,  Dongfei HOU ,  Zhen ZHANG ,  Ce NING ,  Xin GU ,  Zhengliang LI

IPC: H10K10/46 ,  G02F1/1333 ,  G02F1/1362 ,  H10K19/10

Abstract: An array substrate includes a base substrate, a first conductive layer, a first electrode, an organic planarization layer and an organic active layer. The first conductive layer is provided on a side of the base substrate. The first electrode is provided on a side of the first conductive layer away from the base substrate, an orthographic projection of the first electrode on the base substrate overlapping an orthographic projection of the drain electrode on the base substrate. The organic planarization layer is provided on a side of the first electrode away from the base substrate, first via holes being provided in the organic planarization layer. The organic active layer is provided on a side of the organic planarization layer away from the base substrate, the organic active layer being connected to the source electrode by a first via hole and connected to the drain electrode by a first via hole.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.