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公开(公告)号：US20240186330A1
公开(公告)日：2024-06-06
申请号：US17786177
申请日：2021-08-26
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H01L27/12
CPC分类号： H01L27/124
摘要： Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.
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公开(公告)号：US20230122965A1
公开(公告)日：2023-04-20
申请号：US17784398
申请日：2021-06-03
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO
IPC分类号： H10K59/126 , H10K59/131 , H10K71/60 , H10K59/13 , H10K59/121 , H01L27/12
摘要： A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.
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13.发明公开公开(公告)号：US20240297243A1
公开(公告)日：2024-09-05
申请号：US18026833
申请日：2022-05-27
发明人： Jiayu HE , Yan QU , Ce NING , Hehe HU , Zhengliang LI , Nianqi YAO , Jie HUANG , Kun ZHAO , Feifei LI , Liping LEI
IPC分类号： H01L29/739 , H01L27/092 , H01L29/08 , H01L29/165 , H01L29/66 , H01L29/73
CPC分类号： H01L29/7391 , H01L27/092 , H01L29/0847 , H01L29/165 , H01L29/66356 , H01L29/7311
摘要： A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.
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14.发明公开公开(公告)号：US20240234658A1
公开(公告)日：2024-07-11
申请号：US17927792
申请日：2021-12-29
发明人： Jiayu HE , Yan QU , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Qi QI
IPC分类号： H01L33/62 , H01L25/075 , H01L25/16 , H01L27/12
CPC分类号： H01L33/62 , H01L25/0753 , H01L25/167 , H01L27/124
摘要： A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.
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公开(公告)号：US20240213373A1
公开(公告)日：2024-06-27
申请号：US17920351
申请日：2021-11-26
发明人： Dongfang WANG , Jie HUANG
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/42364 , H01L29/66484 , H01L29/78645
摘要： The present disclosure provides a field effect transistor and a method for manufacturing the same, and a display panel, relating to the field of display technologies. The field effect transistor includes a substrate, an active layer, a source, a drain, a first insulating layer and an oxygenating layer. An orthographic projection of the oxygenating layer on the substrate is overlapped with an orthographic projection of a target region of the active layer on the substrate. Therefore, when the oxygenating layer is prepared, oxygen elements in the process environment can diffuse to the target region of the active layer, to oxygenate the active layer. In this way, oxygen vacancies in the active layer can be reduced, and the uniformity and stability of the active layer is improved, thereby further improving the performance of the field effect transistor.
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公开(公告)号：US20240204004A1
公开(公告)日：2024-06-20
申请号：US17910133
申请日：2021-12-27
发明人： Hehe HU , Yan QU , Jiayu HE , Kun ZHAO , Jie HUANG , Zhengliang LI , Ce NING , Dongfang WANG , Fengjuan LIU , Nianqi YAO , Feifei LI , Shunhang ZHANG , Yunsik IM , Liping LEI
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1259 , H01L27/1222
摘要： Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.
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公开(公告)号：US20240188373A1
公开(公告)日：2024-06-06
申请号：US17795243
申请日：2021-09-30
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H10K59/65 , H10K59/12 , H10K59/121 , H10K59/80 , H10K71/00
CPC分类号： H10K59/65 , H10K59/1201 , H10K59/1213 , H10K59/874 , H10K71/00
摘要： Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.
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18.发明公开公开(公告)号：US20240334762A1
公开(公告)日：2024-10-03
申请号：US18741629
申请日：2024-06-12
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Xue LIU
IPC分类号： H10K59/13 , H10K59/12 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00
CPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
摘要： An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.
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公开(公告)号：US20240274674A1
公开(公告)日：2024-08-15
申请号：US18021778
申请日：2022-03-31
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Niangi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/417 , H01L29/423
CPC分类号： H01L29/41733 , H01L29/42384
摘要： Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.
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公开(公告)号：US20240250177A1
公开(公告)日：2024-07-25
申请号：US18014269
申请日：2022-03-31
发明人： Dapeng XUE , Lizhong WANG , Shuilang DONG , Hehe HU , Nianqi YAO , Guangcai YUAN , Ce NING , Zhengliang LI , Dongfang WANG , Liping LEI , Chen XU , Jie HUANG
IPC分类号： H01L29/786 , H01L27/12 , H01L29/417
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/78696
摘要： A metal oxide thin film transistor is provided, which includes a metal oxide semiconductor layer, including a first semiconductor layer and a second semiconductor layer, the carrier mobility of the first semiconductor layer is higher than that of the second semiconductor layer; the metal oxide semiconductor layer includes a lower surface, an upper surface and a lateral surface, the source electrode is in contact with the lateral surface and the upper surface; the region where the lateral surface contacts the source electrode or the drain electrode includes a first contact region and a second contact region; which have the shape: a first angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the first contact region is larger than a second angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the second contact region.
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