公开(公告)号：US4161293A

公开(公告)日：1979-07-17

申请号：US860768

申请日：1977-12-15

申请人： Richard Beelmann ,  Johannes Kerstges ,  Paul Mertens

发明人： Richard Beelmann ,  Johannes Kerstges ,  Paul Mertens

IPC分类号： B02C13/26 ,  B02C13/28 ,  B02C13/10

CPC分类号： B02C13/26 ,  B02C13/2804

摘要： A blower beater mill for grinding and drying, in which a rotor has a beater portion located on a mill shaft and a fan impeller. Beater arms of the beater portion are fastened between hub rings of the mill shaft. The shaft is, furthermore, water-cooled along its longitudinal axis, and shaft cams of the hub rings are enclosed at a distance by an outside jacket having cutouts for passage of the beater arms. The space between the outer jacket and the shaft cams of the hub rings may be filled with insulating material. The shaft cams of the hub rings may have also a heat-reflecting coating. The width of the cutouts may be greater than the width of the beater arms by the amount of maximum axial expansion of the outer jacket relative to the mill shaft. The outer jacket, moreover, is restricted to the portion of the beater part located underneath the mill intake, and reaches to the first row of the beater arms. The beater arms have bases filling the space between two hub rings, and the distance between two adjacent beater arms bases of a beater arm row in the peripheral direction, is at most 0.3 times the distance between two hub rings.

摘要翻译： 一种用于研磨和干燥的鼓风机搅拌机，其中转子具有位于磨机轴上的搅拌器部分和风扇叶轮。 搅拌器部分的打浆臂被紧固在轧机轴的轮毂环之间。 此外，轴还沿着其纵向轴线水冷，轮毂环的轴凸轮通过具有用于打浆机臂通过的切口的外部护套封闭一段距离。 外套和轮毂环的轴凸轮之间的空间可以用绝缘材料填充。 轮毂环的轴凸轮也可以具有热反射涂层。 切口的宽度可以大于打浆机臂的宽度与外护套相对于轧机轴的最大轴向膨胀量。 此外，外护套限于位于磨机入口下方的搅拌器部分的部分，并且到达打浆机臂的第一排。 打浆器臂具有填充两个轮毂环之间的空间的基座，并且在圆周方向上的打浆器臂列的两个相邻的打浆器臂基座之间的距离至多为两个轮毂环之间的距离的0.3倍。

公开(公告)号：US08324116B2

公开(公告)日：2012-12-04

申请号：US12813823

申请日：2010-06-11

申请人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

发明人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

IPC分类号： H01L21/28

CPC分类号： H01L21/31111 ,  H01L21/0206 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

摘要翻译： 一种基板处理方法，包括制备具有含有稀土氧化物和碱土金属氧化物中的至少一种的氧化物膜（13,14）的半导体基板（W，11）的工序，所述氧化膜的至少一部分 （13,14）暴露，以及冲洗步骤，用半碱基化学或有机溶剂制成的漂洗液将半导体衬底（W，11）上的氧化膜（13,14）供应。 优选地，碱性化学品是pH大于7的碱性水溶液。此外，优选有机溶剂是浓度基本上为100％的高浓度有机溶剂。

公开(公告)号：US20120227775A1

公开(公告)日：2012-09-13

申请号：US13480516

申请日：2012-05-25

申请人： Steven Brems ,  Paul Mertens

发明人： Steven Brems ,  Paul Mertens

IPC分类号： B08B3/12 ,  B08B7/02 ,  B08B3/02

CPC分类号： H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Methods and apparatuses for cleaning a surface of a substrate are presented. The method comprises positioning a substrate at a controllable distance from a piezoelectric transducer, supplying a cleaning liquid between the substrate and the transducer, applying an oscillating acoustic force to the cleaning liquid by actuating the transducer, and moving the transducer relative to the substrate. The method further comprises, while moving the transducer relative to the substrate, measuring a value that indicates a distance between a surface of the substrate and the transducer, comparing the measured value to a desired value, and adjusting the distance between the surface and the transducer so that the measured value is maintained substantially equal to the desired value. The measured value may be the distance between the surface of the substrate and the transducer or a phase shift between an alternating current and voltage applied to the transducer.

摘要翻译： 介绍了清洗基板表面的方法和装置。 该方法包括将基板定位在离压电换能器可控的距离处，在基板和换能器之间提供清洗液体，通过致动换能器将振荡的声力施加到清洗液体，并相对于基板移动换能器。 该方法还包括：在相对于衬底移动换能器的同时，测量指示衬底的表面与换能器之间的距离的值，将测量值与期望值进行比较，并且调整表面与换能器之间的距离 使得测量值保持基本上等于期望值。 测量值可以是衬底的表面与换能器之间的距离，也可以是施加到换能器的交流电压和电压之间的相移。

公开(公告)号：US20100317185A1

公开(公告)日：2010-12-16

申请号：US12813823

申请日：2010-06-11

申请人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

发明人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

IPC分类号： H01L21/28

CPC分类号： H01L21/31111 ,  H01L21/0206 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

摘要翻译： 一种基板处理方法，包括制备具有含有稀土氧化物和碱土金属氧化物中的至少一种的氧化物膜（13,14）的半导体基板（W，11）的工序，所述氧化膜的至少一部分 （13,14）暴露，以及冲洗步骤，用半碱基化学或有机溶剂制成的漂洗液将半导体衬底（W，11）上的氧化膜（13,14）供应。 优选地，碱性化学品是pH大于7的碱性水溶液。此外，优选有机溶剂是浓度基本上为100％的高浓度有机溶剂。

公开(公告)号：US07224433B2

公开(公告)日：2007-05-29

申请号：US11174103

申请日：2005-07-01

申请人： Paul Mertens ,  Wim Fyen

发明人： Paul Mertens ,  Wim Fyen

IPC分类号： G03B27/42 ,  G03B27/52 ,  G03B27/58 ,  G03B27/32

CPC分类号： G03F7/70341 ,  G03F7/2041 ,  G03F7/70808

摘要： A method and apparatus for immersion lithography is described. The method includes positioning a semiconductor substrate under an optical immersion head assembly, providing an immersion liquid between the substrate and the optical immersion head assembly, and supplying a tensio-active gaseous substance along the perimeter of the contact area of the immersion liquid and the substrate. The immersion liquid contacts at least an area of the substrate. The tensio-active gaseous substance is chosen such that, when at least partially mixed with the immersion liquid, the mixture has a lower surface tension than the immersion liquid, thereby creating a surface tension gradient pulling the immersion liquid from the perimeter towards an inside portion of the contact area.

摘要翻译： 描述浸没式光刻的方法和装置。 该方法包括将半导体衬底定位在光浸入头组件下方，在衬底和光浸入头组件之间提供浸没液体，并沿着浸液和衬底的接触区域的周边提供张力活性气态物质 。 浸没液体接触基板的至少一个区域。 选择张力活性气体物质，使得当与浸没液体至少部分混合时，混合物具有比浸没液体更低的表面张力，从而产生将浸渍液体从周边拉向内部的表面张力梯度 的接触面积。

公开(公告)号：US06632751B2

公开(公告)日：2003-10-14

申请号：US09892269

申请日：2001-06-27

申请人： Paul Mertens ,  Marc Meuris

发明人： Paul Mertens ,  Marc Meuris

IPC分类号： H01L2100

CPC分类号： H01L21/67057 ,  B08B3/04 ,  F26B13/10 ,  F26B13/28 ,  H01L21/67028 ,  Y10S134/902

摘要： The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

摘要翻译： 本发明涉及一种用于液体处理和干燥诸如半导体晶片的衬底的方法和装置，该方法包括以下步骤：将衬底或一批衬底浸入填充有液体的槽中，并除去衬底 通过开口，使得在去除基底期间通过开口发生液体流。 与去除同时，在液体和基板之间的交线处附近发生液体的表面张力的降低。 为了获得这种张力积极效应，使用气体或蒸汽的均匀流动，或/和局部施加热量。 本发明同样涉及用于执行本发明方法的装置

公开(公告)号：US06530385B2

公开(公告)日：2003-03-11

申请号：US09751569

申请日：2000-12-29

申请人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

发明人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  H01L21/67086 ,  Y10S134/902

摘要： An apparatus for wet cleaning or etching of flat substrates comprising a tank with an inlet opening and outlet opening for said substrates. Said tank contains a cleaning liquid and is installed in a gaseous environment. At least one of the openings is a slice in a sidewall of the tank and is present below the liquid-surface. In the tank there may be a portion above the liquid filled with a gas with a pressure being lower than the pressure within said environment. The method comprises the step of transferring a substrate through the cleaning or etching liquid at a level underneath the surface of said liquid making use of said apparatus.

公开(公告)号：US20120266912A1

公开(公告)日：2012-10-25

申请号：US13453832

申请日：2012-04-23

申请人： Paul Mertens ,  Steven Brems ,  Elisabeth Camerotto ,  Marc Hauptmann

发明人： Paul Mertens ,  Steven Brems ,  Elisabeth Camerotto ,  Marc Hauptmann

IPC分类号： B08B3/12 ,  B08B13/00

CPC分类号： H01L21/67057 ,  B08B3/12 ,  H01L21/02096

摘要： The present invention is related to a method and apparatus for cleaning a substrate, in particular a semiconductor substrate such as a silicon wafer. The substrate is placed in a tank containing a cleaning liquid, at an angle with respect to acoustic waves produced in said liquid. The angle corresponds to the angle of transmission, i.e. the angle at which waves are not reflected off the substrate surface. A damping material is provided in the tank, arranged to absorb substantially all waves thus transmitted through the substrate. A significant improvement in terms of cleaning efficiency is obtained by the method of the invention.

摘要翻译： 本发明涉及用于清洗衬底，特别是诸如硅晶片的半导体衬底的方法和装置。 将衬底相对于在所述液体中产生的声波以一定角度放置在包含清洁液体的容器中。 该角度对应于透射角，即波不会从基板表面反射的角度。 阻尼材料设置在罐中，布置成吸收基本上所有这样透过基底的波。 通过本发明的方法可以获得清洁效率方面的显着改进。

公开(公告)号：US20100224215A1

公开(公告)日：2010-09-09

申请号：US12718732

申请日：2010-03-05

申请人： Paul Mertens ,  Sandip Halder ,  Antoine Pacco ,  Tom Janssens

发明人： Paul Mertens ,  Sandip Halder ,  Antoine Pacco ,  Tom Janssens

IPC分类号： B08B7/00

CPC分类号： H01L21/02071

摘要： Disclosed is a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate, including providing a substrate having at least one patterned surface, supplying a cleaning liquid to the patterned surface, and applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid. Furthermore, and prior to applying the physical force, an additive is supplied to the surface, and the additive is maintained in contact with the surface for a given time, the additive and the time being chosen so that a substantially complete wetting of the surface by the cleaning liquid is achieved.

摘要翻译： 公开了一种在基板的图案化表面上进行物理力辅助清洁处理的方法，包括提供具有至少一个图案化表面的基板，向图案化表面供应清洁液体，并将物理力施加到清洗液体 与图案化表面接触，由此物理力导致清洁液体中的气泡形成。 此外，并且在施加物理力之前，向表面供应添加剂，并且添加剂与表面保持一定时间，添加剂和时间被选择为使得基本上完全润湿表面。 清洗液得以实现。

公开(公告)号：US20090223832A1

公开(公告)日：2009-09-10

申请号：US12350095

申请日：2009-01-07

申请人： Sylvain Garaud ,  Rita Vos ,  Leonardus Leunissen ,  Paul Mertens

发明人： Sylvain Garaud ,  Rita Vos ,  Leonardus Leunissen ,  Paul Mertens

IPC分类号： C25F1/00 ,  C25F7/00

CPC分类号： H01L21/67051 ,  H01L21/02071 ,  H01L21/67023

摘要： The present invention is related to a method and apparatus for cleaning a semiconductor substrate including on a surface of the substrate at least one structure comprising a first conducting or semiconducting material, surrounded by a layer of a second conducting or semiconducting material, said layer essentially extending over the totality of said surface, the first and second material being in physical contact, the method comprising the steps of: providing the substrate, positioning a counter-electrode facing the substrate surface, and supplying an electrolytic fluid to the space between the surface and the electrode, the counter-electrode acting as an anode in the galvanic cell defined by the substrate surface, the cleaning fluid and the counter-electrode.

摘要翻译： 本发明涉及一种用于清洁半导体衬底的方法和装置，所述方法和装置包括在所述衬底的表面上，所述衬底的至少一个结构包括由第二导电或半导体材料层围绕的第一导电或半导体材料，所述层基本上延伸 在所述表面的整体上，所述第一和第二材料物理接触，所述方法包括以下步骤：提供所述基板，定位面对所述基板表面的对置电极，以及将电解液供应到所述表面和 电极，作为由基板表面限定的原电池中的阳极的对电极，清洁流体和对电极。