公开(公告)号：US20140048586A1

公开(公告)日：2014-02-20

申请号：US13586132

申请日：2012-08-15

申请人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： B23K1/20 ,  B23K3/08

CPC分类号： B23K1/0016 ,  B23K1/203 ,  B23K3/082 ,  B23K2101/40 ,  H05K3/3489

摘要： The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.

摘要翻译： 本公开涉及一种用于将焊剂应用于半导体工件的装置。 在一些实施例中，该装置包括具有适于容纳不同深度的助焊剂材料的储存器的浸渍板。 在一些实施例中，储存器包括具有形成第一和第二浸渍区域的侧壁的至少两个着陆区域。 所公开的装置可以允许将半导体工件浸入不同深度的焊剂中，而不需要改变浸渍板。

公开(公告)号：US09700950B2

公开(公告)日：2017-07-11

申请号：US13586132

申请日：2012-08-15

申请人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： B23K1/20 ,  B23K3/08 ,  H05K3/38 ,  B23K1/00 ,  H05K3/34 ,  B23K101/40

CPC分类号： B23K1/0016 ,  B23K1/203 ,  B23K3/082 ,  B23K2101/40 ,  H05K3/3489

摘要： The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.

公开(公告)号：US20120227886A1

公开(公告)日：2012-09-13

申请号：US13045365

申请日：2011-03-10

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Ying-Jui Huang

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Ying-Jui Huang

IPC分类号： B32B37/00 ,  B23B31/28 ,  H01L21/673 ,  B23K31/02

CPC分类号： H01L21/6833 ,  H01L21/67346 ,  Y10T29/49998 ,  Y10T156/10 ,  Y10T279/23

摘要： A portable electrostatic chuck carrier includes a holder having a dielectric top surface, and bipolar electrodes under the dielectric top surface. The bipolar electrodes includes positive electrodes and negative electrodes electrically insulated from the positive electrodes. The positive electrodes and the negative electrodes are allocated in an alternating pattern in a plane substantially parallel to the dielectric top surface.

摘要翻译： 便携式静电卡盘托架包括具有电介质顶表面的保持器和在电介质顶表面下方的双极电极。 双极电极包括与正极电绝缘的正极和负极。 正电极和负电极在基本上平行于电介质顶表面的平面中以交替图案分配。

公开(公告)号：US20130115752A1

公开(公告)日：2013-05-09

申请号：US13290855

申请日：2011-11-07

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

IPC分类号： H01L21/762 ,  B23K3/08 ,  B23K37/04

CPC分类号： H01L24/75 ,  H01L21/67144 ,  H01L2224/7501 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/81815 ,  H01L2924/15311 ,  H01L2924/00014

摘要： An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops

摘要翻译： 一种装置包括导向环和安装在引导环上的接合头。 结合头被构造成沿着导向环移动成环。 结合头被配置为拾取模具并且在回路期间放置模具

公开(公告)号：US08546802B2

公开(公告)日：2013-10-01

申请号：US13290855

申请日：2011-11-07

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

IPC分类号： H01L23/58 ,  H01L21/66

CPC分类号： H01L24/75 ,  H01L21/67144 ,  H01L2224/7501 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/81815 ,  H01L2924/15311 ,  H01L2924/00014

摘要： An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops.

公开(公告)号：US08088692B2

公开(公告)日：2012-01-03

申请号：US12575754

申请日：2009-10-08

申请人： Ying-Jui Huang ,  Hwai-Pwu Chou

发明人： Ying-Jui Huang ,  Hwai-Pwu Chou

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L27/0617

摘要： A method for fabricating a multilayer microstructure with balancing residual stress capability includes forming a multilayer microstructure on a silicon substrate and conducting a step of isotropic plasma etching. The multilayer microstructure includes a first metal layer and a second metal layer patterned and aligned symmetrically to form etching through holes; a metal via layer surrounding each etching through hole; and an insulating layer filling each etching through hole and disposed between the substrate and the first metal layer. The step of isotropic chemical plasma etching removes the insulating layer in each etching through hole, the insulating layer between the substrate and the metal layer and a portion of the substrate to form a suspended multilayer microstructure on the substrate, during which a chamber pressure larger than vacuum and maintains a ratio between a lateral etching rate and a vertical etching rate between 0.5 to 1 is used; and the reaction gases comprise a gaseous fluoride and oxygen.

摘要翻译： 用于制造具有平衡残余应力能力的多层微结构的方法包括在硅衬底上形成多层微结构并进行各向同性等离子体蚀刻步骤。 多层微结构包括对称地图案化和对准的第一金属层和第二金属层，以形成蚀刻通孔; 围绕每个蚀刻通孔的金属通孔层; 以及绝缘层，其填充每个蚀刻通孔并且设置在所述基板和所述第一金属层之间。 各向同性化学等离子体蚀刻的步骤去除了每个蚀刻通孔中的绝缘层，衬底和金属层之间的绝缘层以及衬底的一部分，以在衬底上形成悬浮的多层微结构，在此期间室压力大于 使用真空度并保持横向蚀刻速率和0.5至1之间的垂直蚀刻速率之间的比率; 并且反应气体包含氟化物和氧气。