公开(公告)号：US08088692B2

公开(公告)日：2012-01-03

申请号：US12575754

申请日：2009-10-08

申请人： Ying-Jui Huang ,  Hwai-Pwu Chou

发明人： Ying-Jui Huang ,  Hwai-Pwu Chou

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L27/0617

摘要： A method for fabricating a multilayer microstructure with balancing residual stress capability includes forming a multilayer microstructure on a silicon substrate and conducting a step of isotropic plasma etching. The multilayer microstructure includes a first metal layer and a second metal layer patterned and aligned symmetrically to form etching through holes; a metal via layer surrounding each etching through hole; and an insulating layer filling each etching through hole and disposed between the substrate and the first metal layer. The step of isotropic chemical plasma etching removes the insulating layer in each etching through hole, the insulating layer between the substrate and the metal layer and a portion of the substrate to form a suspended multilayer microstructure on the substrate, during which a chamber pressure larger than vacuum and maintains a ratio between a lateral etching rate and a vertical etching rate between 0.5 to 1 is used; and the reaction gases comprise a gaseous fluoride and oxygen.

摘要翻译： 用于制造具有平衡残余应力能力的多层微结构的方法包括在硅衬底上形成多层微结构并进行各向同性等离子体蚀刻步骤。 多层微结构包括对称地图案化和对准的第一金属层和第二金属层，以形成蚀刻通孔; 围绕每个蚀刻通孔的金属通孔层; 以及绝缘层，其填充每个蚀刻通孔并且设置在所述基板和所述第一金属层之间。 各向同性化学等离子体蚀刻的步骤去除了每个蚀刻通孔中的绝缘层，衬底和金属层之间的绝缘层以及衬底的一部分，以在衬底上形成悬浮的多层微结构，在此期间室压力大于 使用真空度并保持横向蚀刻速率和0.5至1之间的垂直蚀刻速率之间的比率; 并且反应气体包含氟化物和氧气。

公开(公告)号：US20140048586A1

公开(公告)日：2014-02-20

申请号：US13586132

申请日：2012-08-15

申请人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： B23K1/20 ,  B23K3/08

CPC分类号： B23K1/0016 ,  B23K1/203 ,  B23K3/082 ,  B23K2101/40 ,  H05K3/3489

摘要： The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.

摘要翻译： 本公开涉及一种用于将焊剂应用于半导体工件的装置。 在一些实施例中，该装置包括具有适于容纳不同深度的助焊剂材料的储存器的浸渍板。 在一些实施例中，储存器包括具有形成第一和第二浸渍区域的侧壁的至少两个着陆区域。 所公开的装置可以允许将半导体工件浸入不同深度的焊剂中，而不需要改变浸渍板。

公开(公告)号：US08546802B2

公开(公告)日：2013-10-01

申请号：US13290855

申请日：2011-11-07

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

IPC分类号： H01L23/58 ,  H01L21/66

CPC分类号： H01L24/75 ,  H01L21/67144 ,  H01L2224/7501 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/81815 ,  H01L2924/15311 ,  H01L2924/00014

摘要： An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops.

公开(公告)号：US20120088362A1

公开(公告)日：2012-04-12

申请号：US12901273

申请日：2010-10-08

申请人： Chien Ling Hwang ,  Cheng-Chung Lin ,  Ying-Jui Huang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Cheng-Chung Lin ,  Ying-Jui Huang ,  Chung-Shi Liu

IPC分类号： H01L21/768

CPC分类号： H01L24/75 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1605 ,  H01L2224/75302 ,  H01L2224/7531 ,  H01L2224/75312 ,  H01L2224/755 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/41 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method includes allowing a work piece having a solder bump to contact a bond head; heating the bond head until the solder bump is melted; and conducting a cooling media into the bond head to cool the solder bump and to solidify the solder bump.

摘要翻译： 一种方法包括允许具有焊料凸点的工件接触焊接头; 加热粘结头，直到焊料凸起熔化; 并将冷却介质导入接合头以冷却焊料凸点并固化焊料凸块。

公开(公告)号：US20120049346A1

公开(公告)日：2012-03-01

申请号：US12871565

申请日：2010-08-30

申请人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

发明人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L21/02052 ,  H01L21/32125 ,  H01L21/76873 ,  H01L21/76885 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/1084 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/207

摘要： Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than an upper portion. A cross-section of the base portion of the pillar bump may make a trapezoidal, rectangular or sloping shape. Solder material may be formed on the top surface of the pillar. The resulting solder pillar bumps form fine pitch package solder connections that are more reliable than those of the prior art.

摘要翻译： 用于提供焊料柱凸块的装置和方法。 通过在集成电路的端子上通过导电材料的电镀形成导电材料的支柱，在集成电路的输入/输出端子上形成支柱凸点连接。 柱状凸块的基部具有比上部更大的宽度。 柱形凸起的基部的横截面可以形成梯形，矩形或倾斜的形状。 焊料可以形成在柱的顶表面上。 所得到的焊料柱凸起形成比现有技术更可靠的细间距封装焊接连接。

公开(公告)号：US20120007230A1

公开(公告)日：2012-01-12

申请号：US12832168

申请日：2010-07-08

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/3205

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。 提供基板。 焊盘在衬底上。 凸块下金属（UBM）层位于焊盘上方。 铜柱在UBM层之上。 铜柱具有第一宽度的顶表面和具有凹形的侧壁。 具有顶表面和底表面的镍层在铜柱的顶表面之上。 镍层的底面具有第二宽度。 第二宽度与第一宽度的比率在约0.93至约1.07之间。 焊料材料在盖层的顶表面之上。

公开(公告)号：US09700950B2

公开(公告)日：2017-07-11

申请号：US13586132

申请日：2012-08-15

申请人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Bor-Ping Jang ,  Lin-Wei Wang ,  Ying-Jui Huang ,  Yi-Li Hsiao ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： B23K1/20 ,  B23K3/08 ,  H05K3/38 ,  B23K1/00 ,  H05K3/34 ,  B23K101/40

CPC分类号： B23K1/0016 ,  B23K1/203 ,  B23K3/082 ,  B23K2101/40 ,  H05K3/3489

摘要： The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.

公开(公告)号：US08258055B2

公开(公告)日：2012-09-04

申请号：US12832168

申请日：2010-07-08

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Zheng-Yi Lim ,  Yi-Yang Lei ,  Cheng-Chung Lin ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。 提供基板。 焊盘在衬底上。 凸块下金属（UBM）层位于焊盘上方。 铜柱在UBM层之上。 铜柱具有第一宽度的顶表面和具有凹形的侧壁。 具有顶表面和底表面的镍层在铜柱的顶表面之上。 镍层的底面具有第二宽度。 第二宽度与第一宽度的比率在约0.93至约1.07之间。 焊料材料在盖层的顶表面之上。

公开(公告)号：US20130146647A1

公开(公告)日：2013-06-13

申请号：US13313371

申请日：2011-12-07

申请人： Chung-Shi Liu ,  Chien Ling Hwang ,  Bor-Ping Jang ,  Ying-Jui Huang

发明人： Chung-Shi Liu ,  Chien Ling Hwang ,  Bor-Ping Jang ,  Ying-Jui Huang

IPC分类号： B23K31/02

CPC分类号： B23K1/0016 ,  B23K1/0053 ,  B23K1/012 ,  B23K1/206 ,  B23K2101/42 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/75272 ,  H01L2224/75283 ,  H01L2224/75651 ,  H01L2224/765 ,  H01L2224/81097 ,  H01L2224/81211 ,  H01L2224/81912 ,  H01L2224/81948 ,  H01L2924/00012 ,  H01L2924/014

摘要： A method includes reflowing a solder region of a package structure, and performing a cleaning on the package structure at a cleaning temperature higher than a room temperature. Between the step of reflowing and the step of cleaning, the package structure is not cooled to temperatures close to the room temperature.

摘要翻译： 一种方法包括回流包装结构的焊料区域，并且在高于室温的清洁温度下对包装结构进行清洁。 在回流步骤和清洁步骤之间，封装结构没有被冷却到接近于室温的温度。

公开(公告)号：US20130115752A1

公开(公告)日：2013-05-09

申请号：US13290855

申请日：2011-11-07

申请人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

发明人： Chien Ling Hwang ,  Ying-Jui Huang ,  Yi-Li Hsiao

IPC分类号： H01L21/762 ,  B23K3/08 ,  B23K37/04

CPC分类号： H01L24/75 ,  H01L21/67144 ,  H01L2224/7501 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/81815 ,  H01L2924/15311 ,  H01L2924/00014

摘要： An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops

摘要翻译： 一种装置包括导向环和安装在引导环上的接合头。 结合头被构造成沿着导向环移动成环。 结合头被配置为拾取模具并且在回路期间放置模具