INTEGRATED MICROMACHINED THERMAL MASS FLOW SENSOR AND METHODS OF MAKING THE SAME
    11.
    发明申请
    INTEGRATED MICROMACHINED THERMAL MASS FLOW SENSOR AND METHODS OF MAKING THE SAME 有权
    一体化微孔热流量传感器及其制造方法

    公开(公告)号:US20090164163A1

    公开(公告)日:2009-06-25

    申请号:US11864804

    申请日:2007-09-28

    IPC分类号: G01F25/00 G01F1/69

    摘要: An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.

    摘要翻译: 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括上游薄膜加热器,下游薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器和传感器的热隔离膜与基底不接触。 该质量流量传感器用三组电路操作,第一电路用于测量第一流量范围内的流量,第二电路用于测量在第二流量范围内的流量,以及第三电路 用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置,以显着增加流量测量的范围,并提供可选的浓度测量,同时保持高度的测量精度。

    MICROMACHINED GAS AND LIQUID CONCENTRATION SENSOR AND METHOD OF MAKING THE SAME
    12.
    发明申请
    MICROMACHINED GAS AND LIQUID CONCENTRATION SENSOR AND METHOD OF MAKING THE SAME 有权
    微孔气体和液体浓度传感器及其制造方法

    公开(公告)号:US20090016403A1

    公开(公告)日:2009-01-15

    申请号:US11774771

    申请日:2007-07-09

    IPC分类号: G01N25/00 G01F1/68

    摘要: A device with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure gas or liquid concentration in a binary mixture formality is disclosed in the present invention. A process for fabricating the said MEMS silicon concentration sensor, which thereby can greatly reduce the sensor fabrication cost by a batch production, is revealed as well. This MEMS process can mass-produce the sensors on silicon substrate in the ways of small size, low power, and high reliability. In addition to the gas or liquid concentration measurement, the present invention further discloses that the said sensor can also readily measure gas or liquid mass flow rate while record the concentration data, which is not viable by other related working principle.

    摘要翻译: 在本发明中公开了一种具有微加工(a.k.a. MEMS,Micro Electro Mechanical Systems)硅传感器的装置,用于测量二元混合物形式中的气体或液体浓度。 也可以揭示制造所述MEMS硅浓度传感器的方法,从而能够通过批量生产大大降低传感器制造成本。 该MEMS工艺可以以小尺寸,低功率和高可靠性的方式批量生产硅衬底上的传感器。 除了气体或液体浓度测量之外,本发明还公开了所述传感器还可以容易地测量气体或液体质量流量,同时记录其他相关工作原理不可行的浓度数据。

    MEMS TIME-OF-FLIGHT THERMAL MASS FLOW METER
    14.
    发明申请
    MEMS TIME-OF-FLIGHT THERMAL MASS FLOW METER 有权
    MEMS时间飞行热量流量计

    公开(公告)号:US20120216629A1

    公开(公告)日:2012-08-30

    申请号:US13035639

    申请日:2011-02-25

    IPC分类号: G01F1/708

    CPC分类号: G01F1/7084 G01F1/72

    摘要: An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.

    摘要翻译: 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。

    Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications
    15.
    发明授权
    Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications 失效
    通过离子注入为微光电机械系统(MOEMS)应用定义了牺牲区域

    公开(公告)号:US06620712B2

    公开(公告)日:2003-09-16

    申请号:US10011350

    申请日:2001-11-12

    IPC分类号: H01L2100

    摘要: The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with ion-dopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.

    摘要翻译: 本发明公开了一种在基片上的电光装置支架。 电光装置包括设置在基板上的牺牲层,其具有围绕并限定光学室的室壁区域。 电光装置还包括设置在牺牲层顶部的膜层,其具有围绕并限定用于透射光信号的电可调膜的室去除开口。 设置在由室壁区域围绕的光学室的顶部上的电可调膜。 室壁区域掺杂有离子掺杂剂,用于在通过室去除开口进行的室形成过程中维持室壁区域以用于去除电阻。 在优选实施例中,室壁区域是具有碳或氮的掺杂二氧化硅区域。 在另一个优选的实施方案中,室壁区域是氮离子掺杂的SiN x O y区域。 在另一个优选实施例中,光学室是通过蚀刻通过室去除开口形成的蚀刻室,用于蚀刻由构成室壁的耐蚀刻区域围绕的蚀刻增强区域。

    Method for forming micromachined liquid flow sensor

    公开(公告)号:US10908006B2

    公开(公告)日:2021-02-02

    申请号:US16278962

    申请日:2019-02-19

    IPC分类号: G01F1/684

    摘要: The micromachined liquid flow sensor devices are enclosed with silicon nitride film as passivation layer to protect device from penetration of liquid into device and avoid the damages of erosion or short circuit etc. One thin layer of silicon dioxide is deposited underneath the silicon nitride layer to enhance the adhesion and reliability of the passivation layer for various applications. The incorporation of silicon dioxide film had successfully provided reliable passivation protection especially for microfluidic devices application. In order to avoid flow turbulence caused by wire bonding wires, the wire bonding wires are omitted by deploying through-substrate conductive vias whereas connected to the carrier printed circuit board of sensor chip. The present invention disclosed a novel micromachining process and designed structure to form hermit sealing between the sensor chip and the carrier printed circuit board. The hermit sealing underneath the sensor chip can protect the bonding connections from exposing to liquid flow media and avoid short circuitry or induce undesired chemical corrosion. More particularly, the embodiments of the current invention relates to formation steps of a micromachined liquid flow sensor including passivation and protection of bonding connection to its carrier printed circuit board, which is therefore capable to offer superb accuracy and reliability for liquid flow measurement.

    Method for Forming Micromachined Liquid Flow Sensor

    公开(公告)号:US20200264022A1

    公开(公告)日:2020-08-20

    申请号:US16278962

    申请日:2019-02-19

    IPC分类号: G01F1/684

    摘要: The micromachined liquid flow sensor devices are enclosed with silicon nitride film as passivation layer to protect device from penetration of liquid into device and avoid the damages of erosion or short circuit etc. One thin layer of silicon dioxide is deposited underneath the silicon nitride layer to enhance the adhesion and reliability of the passivation layer for various applications. The incorporation of silicon dioxide film had successfully provided reliable passivation protection especially for microfluidic devices application. In order to avoid flow turbulence caused by wire bonding wires, the wire bonding wires are omitted by deploying through-substrate conductive vias whereas connected to the carrier printed circuit board of sensor chip. The present invention disclosed a novel micromachining process and designed structure to form hermit sealing between the sensor chip and the carrier printed circuit board. The hermit sealing underneath the sensor chip can protect the bonding connections from exposing to liquid flow media and avoid short circuitry or induce undesired chemical corrosion. More particularly, the embodiments of the current invention relates to formation steps of a micromachined liquid flow sensor including passivation and protection of bonding connection to its carrier printed circuit board, which is therefore capable to offer superb accuracy and reliability for liquid flow measurement.

    Micromachined mass flow sensor and methods of making the same
    19.
    发明申请
    Micromachined mass flow sensor and methods of making the same 有权
    微加工质量流量传感器及其制造方法

    公开(公告)号:US20070011867A1

    公开(公告)日:2007-01-18

    申请号:US11523436

    申请日:2006-09-19

    IPC分类号: H01B13/00

    摘要: A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.

    摘要翻译: 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。