Semiconductor device with improved peripheral resistance element and method for fabricating same
    11.
    发明授权
    Semiconductor device with improved peripheral resistance element and method for fabricating same 失效
    具有改进的外围电阻元件的半导体器件及其制造方法

    公开(公告)号:US06696719B2

    公开(公告)日:2004-02-24

    申请号:US09729803

    申请日:2000-12-06

    申请人: Ichiro Yamamoto

    发明人: Ichiro Yamamoto

    IPC分类号: H01L2976

    摘要: A semiconductor device in which a cell capacitor with an MIM or MIS structure is formed using a conductive material with a low resistivity for the upper electrode and a resistance element is formed using a conductive material with high resistance without increasing the complexity of the fabrication process. A plate electrode used for the upper electrode of the cell capacitor and for the resistance element is made by forming a three-layer structure including a low resistance conductive material layer, an insulating film layer on the low resistance conductive material layer, and a high resistance conductive material layer on the insulating film layer, patterning the three-layer structure in the same shape, and using the low resistance conductive material layer as the upper electrode of the cell capacitor and the high resistance conductive material layer as the resistance element.

    摘要翻译: 使用具有低电阻率的导电材料形成具有MIM或MIS结构的电池电容器的半导体器件,并且电阻元件使用具有高电阻的导电材料形成,而不增加制造工艺的复杂性。 用于电池电容器和电阻元件的上电极的平板电极是通过在低电阻导电材料层上形成包括低电阻导电材料层,绝缘膜层和高电阻的三层结构制成的 在绝缘膜层上形成导电材料层,对相同形状的三层结构进行构图,并使用低电阻导电材料层作为电池电容器和高电阻导电材料层的上电极作为电阻元件。

    Tricyclic compound having anti-allergic activities
    12.
    发明授权
    Tricyclic compound having anti-allergic activities 失效
    三环化合物具有抗过敏活性

    公开(公告)号:US5643920A

    公开(公告)日:1997-07-01

    申请号:US325339

    申请日:1994-10-27

    CPC分类号: C07D471/06

    摘要: A nitrogen-containing tricyclic compound represented by formula (I): ##STR1## a salt thereof, or a solvate of said compound or said salt, wherein R represents phenyl or naphthyl group which is unsubstituted or substituted at one to five sites with a group such as a halogen atom; a straight chain or branched alkyl group containing 1 to 10 carbon atoms which is unsubstituted or substituted with one or more halogen atoms; or the like; Y represents hydrogen atom; and Z represents a group such as hydrogen atom, hydroxyl group, or the like; or Y and Z together represent a group such as hydrazono group, hydroxyimino group, or the like which is unsubstituted or substituted with a particular group; and X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents CH--N--C.dbd.C or N--C.dbd.C--N; provided that when X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents N--C.dbd.C--N, Y and Z does not together represent hydroxyimino group or oxygen atom; is capable of inhibiting the production of IgE antibody, and therefore, is useful as a prophylactic and/or therapeutic agent for allergic diseases.

    摘要翻译: PCT No.PCT / JP93 / 00549 Sec。 371日期:1994年10月27日 102(e)日期1994年10月27日PCT提交1993年4月27日PCT公布。 公开号WO93 / 22313 日本公开号为1993年11月11日,由式(I)表示的含氮三环化合物:其中R 1表示未取代或取代的苯基或萘基的化合物或其盐的溶剂化物 在一至五个具有卤素原子的位置; 含有1至10个碳原子的直链或支链烷基,其未被取代或被一个或多个卤素原子取代; 或类似物; Y表示氢原子; Z表示氢原子,羟基等基团, 或Y和Z一起表示未被取代或被特定基团取代的亚氨基,羟基亚氨基等基团; X1-X2差异C差异X3表示CH-N-C = C或N-C = C-N; 条件是当X 1 -X 2差异C差异X3表示N-C = C-N时,Y和Z不一起表示羟基亚氨基或氧原子; 能够抑制IgE抗体的产生,因此可用作过敏性疾病的预防和/或治疗剂。

    Method for depositing film and method for manufacturing semiconductor device
    18.
    发明申请
    Method for depositing film and method for manufacturing semiconductor device 失效
    薄膜沉积方法及制造半导体器件的方法

    公开(公告)号:US20070212898A1

    公开(公告)日:2007-09-13

    申请号:US11715847

    申请日:2007-03-09

    IPC分类号: H01L21/31

    摘要: A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.

    摘要翻译: 一种沉积膜的方法包括:(a)处理晶片,包括在第一晶片上形成高介电常数膜; 并且实现在第一晶片上形成的高介电常数膜的氮化; 和(b)进行包括在第二晶片上形成高介电常数膜的涂覆工艺; 并且实现在第二晶片上形成的高介电常数膜的氮化。 在相同的反应室中进行晶片的处理和进行涂覆处理。 涂覆工艺在加工晶片之前进行。

    Semiconductor device and method for manufacturing same
    20.
    发明申请
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号:US20050212029A1

    公开(公告)日:2005-09-29

    申请号:US11120994

    申请日:2005-05-04

    申请人: Ichiro Yamamoto

    发明人: Ichiro Yamamoto

    摘要: A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

    摘要翻译: 提供了一种半导体器件,其具有由锆合金制成的电容器绝缘膜,其是通过具有包含无定形氧化铝并且其组成为Al x Zr(1- (0.05 <= X <= 0.3),因此在形成MIM(金属绝缘体金属)结构的电容器的工艺中能够防止介电击穿 电容绝缘膜,而用作电容器绝缘膜的金属氧化物膜的相对介电常数保持较高。