公开(公告)号：US20140361425A1

公开(公告)日：2014-12-11

申请号：US14469698

申请日：2014-08-27

Applicant: DENSO CORPORATION

Inventor： Kuniaki MAMITSU ,  Takahisa KANEKO ,  Masaya TONOMOTO ,  Masayoshi NISHIHATA ,  Hiroyuki WADO ,  Chikage NORITAKE ,  Eiji NOMURA ,  Toshiki ITOH

IPC: H01L23/427 ,  H01L23/367

CPC classification number: H01L23/473 ,  H01L23/3672 ,  H01L23/3736 ,  H01L23/427 ,  H01L23/4334 ,  H01L23/46 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1517 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

公开(公告)号：US20220278030A1

公开(公告)日：2022-09-01

申请号：US17747629

申请日：2022-05-18

Applicant: DENSO CORPORATION

Inventor： Syunsuke ARAI ,  Masayoshi NISHIHATA ,  Shinji HIRAMITSU ,  Noriyuki KAKIMOTO

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/07

Abstract: A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

公开(公告)号：US20220005750A1

公开(公告)日：2022-01-06

申请号：US17475102

申请日：2021-09-14

Applicant: DENSO CORPORATION

Inventor： Masayoshi NISHIHATA ,  Shota YOSHIKAWA

IPC: H01L23/492 ,  H01L25/07 ,  H01L23/367 ,  H01L23/31

Abstract: In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.

公开(公告)号：US20160315037A1

公开(公告)日：2016-10-27

申请号：US15103594

申请日：2014-12-09

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Arata HARADA ,  Tomomi OKUMURA ,  Keita FUKUTANI ,  Masayoshi NISHIHATA

IPC: H01L23/495 ,  H02M7/00 ,  H01L29/861 ,  H01L23/31 ,  H01L29/739

CPC classification number: H01L23/49562 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/33 ,  H01L29/7395 ,  H01L29/861 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract translation: 半导体器件包括第一开关元件; 第二开关元件; 第一金属构件; 第二金属构件; 在高电位侧具有潜力的第一终端; 在低电位侧具有电位的第二端子; 具有中点电位的第三终端; 和树脂部分。 第一个潜在的部分具有等于第一个终端的潜力的潜力。 第二潜在部分具有与第二终端的电位相等的电位。 第三个潜在部分具有与第三个终端的电位相等的电位。 第一电位部分和第二电位部分之间的第一爬电距离长于第一电位部分和第三电位部分之间的第二爬电距离的最小值和第二电位部分与第三电位部分之间的第三爬电距离 。

公开(公告)号：US20150162274A1

公开(公告)日：2015-06-11

申请号：US14528383

申请日：2014-10-30

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Tomomi OKUMURA ,  Keita FUKUTANI ,  Masayoshi NISHIHATA

IPC: H01L23/498 ,  H01L23/047 ,  H01L23/31

CPC classification number: H01L23/047 ,  H01L21/565 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor apparatus is disclosed, which includes a semiconductor element provided on a plane; a sealing resin that seals the semiconductor element; a terminal that is electrically connected to the semiconductor element and includes a part that projects from a predetermined surface of the sealing resin; and a concave portion that is recessed toward a side of the semiconductor element from the predetermined surface, when viewed in a direction perpendicular to the plane. A side of the concave portion on the side of the semiconductor element includes a rounded shape, when viewed in the direction perpendicular to the plane.

Abstract translation: 公开了一种半导体装置，其包括设置在平面上的半导体元件; 密封半导体元件的密封树脂; 电连接到半导体元件并且包括从密封树脂的预定表面突出的部分的端子; 以及当从与该平面垂直的方向观察时，从该预定表面向该半导体元件的一侧凹入的凹部。 当从垂直于该平面的方向观察时，半导体元件侧的凹部的一侧包括圆形。

公开(公告)号：US20140015120A1

公开(公告)日：2014-01-16

申请号：US14024917

申请日：2013-09-12

Applicant: DENSO CORPORATION

Inventor： Kuniaki MAMITSU ,  Takahisa KANEKO ,  Masaya TONOMOTO ,  Masayoshi NISHIHATA ,  Hiroyuki WADO ,  Chikage NORITAKE ,  Eiji NOMURA ,  Toshiki ITOH

IPC: H01L23/473

CPC classification number: H01L23/473 ,  H01L23/3672 ,  H01L23/3736 ,  H01L23/427 ,  H01L23/4334 ,  H01L23/46 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1517 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Abstract translation: 半导体器件包括封装和冷却器。 半导体封装包括半导体元件，金属构件和用于封装半导体元件和金属构件的模制构件。 金属构件具有热连接到半导体元件的金属部分，金属部分上的绝缘层和绝缘层上的导电层。 导电层至少部分地暴露在模制构件的外部，并且用作用于辐射半导体元件的热的辐射表面。 冷却器具有冷却剂通道，冷却剂通过该通道冷却导电层。 导电层和冷却器电连接在一起。