摘要:
A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.
摘要:
A channel estimator, demodulator, speed estimator and method thereof. The speed estimator may generate a speed indicator indicating a speed of a mobile device. The channel estimator may perform channel estimation based on the estimated speed indicated by the speed indicator. The demodulator may perform channel compensation based on the channel estimation performed by the channel estimator.
摘要:
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.
摘要:
A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.
摘要:
Disclosed is an electromagnetic wave interference (EMI)/radio frequency interference (RFI) shielding resin composite material including (A) a thermoplastic polymer resin, (B) a tetrapod whisker, and (C) a low melting point metal.
摘要:
Disclosed is a method of preparing metal carbide including: applying physical force to a mixture of metal or metal oxide with carbonaceous material to provide a hybrid particle in which the carbonaceous material is filled inside the metal or metal oxide, or the carbonaceous material is coated onto the surface of the metal or metal oxide or the metal or metal oxide is filled inside the carbonaceous material, or the metal or metal oxide is coated onto the surface of the carbonaceous material and heating the hybrid particle; and a metal carbide prepared therefrom.
摘要:
Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.
摘要:
A channel estimator, demodulator, speed estimator and method thereof. The speed estimator may generate a speed indicator indicating a speed of a mobile device. The channel estimator may perform channel estimation based on the estimated speed indicated by the speed indicator. The demodulator may perform channel compensation based on the channel estimation performed by the channel estimator.
摘要:
A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the first region, forming a sacrificial layer and a passivation layer over the etch-target layer, etching the passivation layer and the sacrificial layer to form stack structures including a sacrificial pattern and a passivation pattern, forming spacers over sidewalls of the stack structures, forming a mask pattern covering the second region, removing a portion of the passivation pattern in the first region exposed by the mask pattern to expose a portion of the sacrificial pattern in the first region, removing the exposed portion of the sacrificial pattern in the first region, and etching the etch-target layer to form an etch-target pattern using the spacers in the first and second regions and the stack structure formed between the spacers in the second region.