Securing quality of service (QoS) according to type of wireless local area network (WLAN) service
    12.
    发明申请
    Securing quality of service (QoS) according to type of wireless local area network (WLAN) service 有权
    根据无线局域网(WLAN)服务的类型确保服务质量(QoS)

    公开(公告)号:US20070155365A1

    公开(公告)日:2007-07-05

    申请号:US11523708

    申请日:2006-09-20

    IPC分类号: H04M3/16

    摘要: A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.

    摘要翻译: 基于IEEE 802.11的WLAN通信系统中根据无线局域网(WLAN)业务类型来保护服务质量(QoS)的无线网络系统和方法包括:认证服务器,其适于设置接入类别的优先级 用户响应于请求用于接入无线网络的认证的用户终端来执行认证过程的无线网络服务; 以及适于接收和存储由认证服务器认证的用户终端的接入类别信息的接入点(AP),并将包含在从用户终端接收的分组中的接入类别信息与用户终端的先前存储的接入类别信息进行比较 以控制对无线网络的访问。

    Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method
    15.
    发明授权
    Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method 有权
    通过该方法制造非易失性存储器件和非易失性存储器件的制造方法

    公开(公告)号:US08404548B2

    公开(公告)日:2013-03-26

    申请号:US13179842

    申请日:2011-07-11

    IPC分类号: H01L21/336

    摘要: A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

    摘要翻译: 一种制造具有三维存储器件的非易失性存储器件的方法包括在半导体衬底上交替堆叠具有不同蚀刻选择性的多个第一和第二材料层; 形成贯穿所述多个第一和第二材料层的开口; 去除由开口暴露的第一材料层,以形成从开口垂直于半导体衬底的方向延伸的延伸部分; 沿着开口和延伸部分的表面保形地形成电荷存储层; 并且去除形成在第二材料层的侧壁上的电荷存储层,以在延伸部分中局部形成电荷存储层图案。

    EMI/RFI shielding resin composite material and molded product made using the same
    16.
    发明授权
    EMI/RFI shielding resin composite material and molded product made using the same 有权
    EMI / RFI屏蔽树脂复合材料和使用其制成的模制产品

    公开(公告)号:US08221654B2

    公开(公告)日:2012-07-17

    申请号:US12634768

    申请日:2009-12-10

    IPC分类号: H01B1/22 G21F1/02

    CPC分类号: H05K9/0083

    摘要: Disclosed is an electromagnetic wave interference (EMI)/radio frequency interference (RFI) shielding resin composite material including (A) a thermoplastic polymer resin, (B) a tetrapod whisker, and (C) a low melting point metal.

    摘要翻译: 公开了一种电磁波干扰(EMI)/射频干扰(RFI)屏蔽树脂复合材料,其包括(A)热塑性聚合物树脂,(B)四脚架晶须和(C)低熔点金属。

    Method of Preparing Metal Carbide and Metal Carbide Prepared Using the Same
    17.
    发明申请
    Method of Preparing Metal Carbide and Metal Carbide Prepared Using the Same 审中-公开
    制备金属硬质合金和金属硬质合金的方法

    公开(公告)号:US20100158787A1

    公开(公告)日:2010-06-24

    申请号:US12637888

    申请日:2009-12-15

    IPC分类号: C01B31/30 B05D7/00 B65B3/04

    摘要: Disclosed is a method of preparing metal carbide including: applying physical force to a mixture of metal or metal oxide with carbonaceous material to provide a hybrid particle in which the carbonaceous material is filled inside the metal or metal oxide, or the carbonaceous material is coated onto the surface of the metal or metal oxide or the metal or metal oxide is filled inside the carbonaceous material, or the metal or metal oxide is coated onto the surface of the carbonaceous material and heating the hybrid particle; and a metal carbide prepared therefrom.

    摘要翻译: 公开了一种制备金属碳化物的方法,包括:将物理力施加到金属或金属氧化物与碳质材料的混合物上,以提供其中将碳质材料填充在金属或金属氧化物内的混合颗粒,或将碳质材料涂覆到 将金属或金属氧化物或金属或金属氧化物的表面填充在碳质材料的内部,或者将金属或金属氧化物涂布在碳质材料的表面上并加热混合颗粒; 和由其制备的金属碳化物。

    Channel estimator, demodulator, speed estimator and method thereof
    19.
    发明授权
    Channel estimator, demodulator, speed estimator and method thereof 有权
    信道估计器,解调器,速度估计器及其方法

    公开(公告)号:US07539166B2

    公开(公告)日:2009-05-26

    申请号:US11240628

    申请日:2005-10-03

    IPC分类号: H04B7/216

    摘要: A channel estimator, demodulator, speed estimator and method thereof. The speed estimator may generate a speed indicator indicating a speed of a mobile device. The channel estimator may perform channel estimation based on the estimated speed indicated by the speed indicator. The demodulator may perform channel compensation based on the channel estimation performed by the channel estimator.

    摘要翻译: 信道估计器,解调器,速度估计器及其方法。 速度估计器可以生成指示移动设备的速度的速度指示符。 信道估计器可以基于由速度指示器指示的估计速度来执行信道估计。 解调器可以基于由信道估计器执行的信道估计来执行信道补偿。

    METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE
    20.
    发明申请
    METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE 失效
    在半导体器件中形成图案的方法

    公开(公告)号:US20090117739A1

    公开(公告)日:2009-05-07

    申请号:US11965582

    申请日:2007-12-27

    IPC分类号: H01L21/306

    摘要: A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the first region, forming a sacrificial layer and a passivation layer over the etch-target layer, etching the passivation layer and the sacrificial layer to form stack structures including a sacrificial pattern and a passivation pattern, forming spacers over sidewalls of the stack structures, forming a mask pattern covering the second region, removing a portion of the passivation pattern in the first region exposed by the mask pattern to expose a portion of the sacrificial pattern in the first region, removing the exposed portion of the sacrificial pattern in the first region, and etching the etch-target layer to form an etch-target pattern using the spacers in the first and second regions and the stack structure formed between the spacers in the second region.

    摘要翻译: 在半导体器件中形成图案的方法包括在衬底上形成蚀刻目标层,其中衬底包括具有比第一区域更小的图案的第一区域,在蚀刻靶上形成牺牲层和钝化层 蚀刻钝化层和牺牲层以形成包括牺牲图案和钝化图案的堆叠结构,在堆叠结构的侧壁上形成间隔物,形成覆盖第二区域的掩模图案,从而去除钝化层的一部分 第一区域由掩模图案曝光以暴露第一区域中的牺牲图案的一部分,去除第一区域中的牺牲图案的暴露部分,以及蚀刻蚀刻目标层,以使用间隔物 在第一区域和第二区域中形成叠层结构,并且在第二区域中形成在间隔物之间​​。