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    METHODS AND SYSTEMS FOR DESIGNING AND VALIDATING OPERATION OF ABATEMENT SYSTEMS
    11.
    发明申请
    METHODS AND SYSTEMS FOR DESIGNING AND VALIDATING OPERATION OF ABATEMENT SYSTEMS 审中-公开
    用于设计和确认退休系统操作的方法和系统

    公开(公告)号：US20090018688A1

    公开(公告)日：2009-01-15

    申请号：US12139472

    申请日：2008-06-14

    Applicant: Phil Chandler ,  Daniel O. Clark ,  Robbert M. Vermeulen ,  Belynda Flippo ,  Mehran Moalem ,  Charles Murray

    Inventor： Phil Chandler ,  Daniel O. Clark ,  Robbert M. Vermeulen ,  Belynda Flippo ,  Mehran Moalem ,  Charles Murray

    IPC: G06F19/00

    CPC classification number: B01D53/346 ,  B01D2258/0216

    Abstract: A method of developing an integrated abatement system is provided, including the steps: a) determining whether an integrated abatement system meets a destruction removal efficiency standard wherein the determination includes the steps: i) operating an electronic device manufacturing process tool using a best known method, whereby effluent containing a target species is produced; ii) abating the target species to form abated effluent, using an abatement system which is coupled to the process tool; and iii) calculating a destruction removal efficiency for the target species; and b) modifying the abatement system by altering at least one of a design parameter and an operating parameter of the abatement system to improve the destruction removal efficiency. Numerous other aspects are provided.

    Abstract translation: 提供了一种开发集成减排系统的方法，包括步骤：a）确定综合减排系统是否满足销毁去除效率标准，其中确定包括以下步骤：i）使用最佳已知方法操作电子设备制造工艺工具 由此产生含有目标物种的流出物; ii）使用与处理工具相连的减排系统来减轻目标物种以形成减排的流出物; 和iii）计算目标物种的破坏去除效率; 以及b）通过改变所述减排系统的设计参数和操作参数中的至少一个来改进所述减排系统，以提高所述破坏去除效率。 提供了许多其他方面。

    Robot blade for handling of semiconductor substrate
    12.
    发明授权
    Robot blade for handling of semiconductor substrate 失效
    用于处理半导体衬底的机器人刀片

    公开(公告)号：US6024393A

    公开(公告)日：2000-02-15

    申请号：US740886

    申请日：1996-11-04

    Applicant: Behzad Shamlou ,  Wen Chiang Tu ,  Xuyen Pham ,  Yu Chang ,  Daniel O. Clark ,  Shun Wu

    Inventor： Behzad Shamlou ,  Wen Chiang Tu ,  Xuyen Pham ,  Yu Chang ,  Daniel O. Clark ,  Shun Wu

    IPC: B25J15/06 ,  B65G49/07 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

    CPC classification number: H01L21/6838 ,  H01L21/68707 ,  Y10S294/907 ,  Y10S414/141

    Abstract: The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the wafer handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450.degree. C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant. A preferred material for construction of the substrate handling blade is single crystal sapphire. Other single crystal materials, such as single crystal silicon and single crystal silicon carbide should also perform well. In a particularly preferred embodiment of the substrate handling blade, a capacitance sensor is used to indicate the presence of a semiconductor substrate on the surface of the handling blade and a structure through which vacuum is applied may be used to hold (chuck) the semiconductor substrate to the surface of the handling blade.

    Abstract translation: 通过使用作为半导体基板处理叶片的构造的主要材料的特殊材料或作为表面上的涂层，由于半导体基板和机器人基板处理刮板之间的摩擦而产生的颗粒污染物的量已经大大降低 的晶片处理叶片。 特别地，专门的材料必须在超过约450℃的温度下显示所需的刚度。 专用材料也必须具有在摩擦半导体衬底时不会产生微粒的耐磨表面。 耐磨表面需要非常光滑，表面光洁度小于1.0微英寸，优选小于0.2微英寸。 此外，表面必须基本上无空隙。 在最优选的实施例中，衬底处理刀片的上顶表面由平滑，无孔和耐磨的电介质材料构成。 用于构造基板处理叶片的优选材料是单晶蓝宝石。 其他单晶材料，如单晶硅和单晶碳化硅也应表现良好。 在基板处理叶片的特别优选的实施例中，使用电容传感器来表示在处理叶片的表面上存在半导体基板，并且可以使用施加真空的结构来保持（卡盘）半导体基板 到处理叶片的表面。

    Process for preparing POWADIR membranes from tetrahalobisphenol A polycarbonates
    14.
    发明授权
    Process for preparing POWADIR membranes from tetrahalobisphenol A polycarbonates 失效
    从四卤双酚A聚碳酸酯制备POWADIR膜的方法

    公开(公告)号：US4772392A

    公开(公告)日：1988-09-20

    申请号：US118119

    申请日：1987-11-06

    Applicant: Edgar S. Sanders, Jr. ,  Daniel O. Clark ,  John A. Jensvold ,  Henry N. Beck ,  G. Glenn Lipscomb, II ,  Frederick L. Coan

    Inventor： Edgar S. Sanders, Jr. ,  Daniel O. Clark ,  John A. Jensvold ,  Henry N. Beck ,  G. Glenn Lipscomb, II ,  Frederick L. Coan

    IPC: B01D67/00 ,  B01D69/02 ,  B01D69/08 ,  B01D71/50 ,  C01B3/50 ,  C01B13/02 ,  C08G64/10 ,  B01D13/01

    CPC classification number: B01D67/0009 ,  B01D69/02 ,  B01D69/08 ,  B01D69/087 ,  B01D71/50 ,  C01B13/0255 ,  C01B3/503 ,  C08G64/10 ,  B01D2323/08 ,  B01D2323/12 ,  B01D2325/022 ,  C01B2203/0405 ,  C01B2203/048 ,  C01B2210/0046 ,  Y10S264/48

    Abstract: The invention is a process for the preparation of a POWADIR membrane comprising bisphenol-based polycarbonates wherein at least 25 percent by weight of the bisphenol moieties are tetrahalogenated wherein the halogen is Cl or Br, and the membrane prepared by such process. The process generally comprises: forming a mixture comprising (i) a bisphenol-based polycarbonate wherein at least 25 percent by weight of the bisphenol moieties are tetrahalogenated, wherein the halogen is Cl or Br, (ii) a solvent for such polycarbonate, and (iii) a non-solvent for such polycarbonate, wherein the mixture has a sufficient viscosity to allow extrusion at temperatures at which the mixture is homogeneous; heating the mixture to a temperature at which the mixture is a homogeneous fluid and extrudable; extruding the heated mixture into a shape suitable for membrane use; passing the formed membrane through a quench zone wherein the mixture undergoes phase separation, and the major portion of the solvent and non-solvent are removed from the formed membrane; wherein the membrane formed is a POWADIR membrane with a discriminating region capable of separating oxygen from nitrogen.

    Abstract translation: 本发明是一种制备包含双酚基聚碳酸酯的POWADIR膜的方法，其中至少25重量％的双酚部分是四卤化的，其中卤素是Cl或Br，以及通过这种方法制备的膜。 该方法通常包括：形成混合物，其包含（i）双酚基聚碳酸酯，其中至少25重量％的双酚部分是四卤代的，其中卤素是Cl或Br，（ii）这种聚碳酸酯的溶剂和（ iii）用于这种聚碳酸酯的非溶剂，其中混合物具有足够的粘度以允许在混合物均匀的温度下挤出; 将混合物加热到混合物是均匀流体并可挤出的温度; 将加热的混合物挤出成适于膜使用的形状; 将形成的膜通过骤冷区，其中混合物经历相分离，并且从形成的膜中除去主要部分的溶剂和非溶剂; 其中所形成的膜是具有能够将氮与氮分离的鉴别区的POWADIR膜。

    Methods and apparatus for treating exhaust gas in a processing system
    15.
    发明授权
    Methods and apparatus for treating exhaust gas in a processing system 有权
    在处理系统中处理废气的方法和装置

    公开(公告)号：US08747762B2

    公开(公告)日：2014-06-10

    申请号：US12957539

    申请日：2010-12-01

    Applicant: Colin John Dickinson ,  Mehran Moalem ,  Daniel O. Clark

    Inventor： Colin John Dickinson ,  Mehran Moalem ,  Daniel O. Clark

    IPC: B01J19/08

    CPC classification number: B01D53/32 ,  B01D53/92 ,  B01D2258/0216 ,  B01D2259/122 ,  B01D2259/80 ,  B01D2259/818 ,  C23C16/4412

    Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline injection kit includes a pressure regulator to set a foreline gas delivery pressure setpoint, and a first pressure gauge coupled to monitor a delivery pressure of the gas upstream of the foreline.

    Abstract translation: 本文提供了用于处理衬底处理系统的前级管线中的废气的方法和装置。 在一些实施例中，用于处理衬底处理系统的前级管线中的废气的装置包括耦合到处理室的前级管线的等离子体源，耦合到等离子体源上游的前级管线的试剂源和前级气体注入 前级管线注入套件包括用于设定前级气体输送压力设定点的压力调节器，以及耦合以监测前级管线上游气体的输送压力的第一压力表， 。

    SPUTTERING TARGET
    17.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：US20100126854A1

    公开(公告)日：2010-05-27

    申请号：US12277197

    申请日：2008-11-24

    Applicant: Daniel O. Clark

    Inventor： Daniel O. Clark

    IPC: C23C14/34 ,  C23C14/00

    CPC classification number: C23C14/3407 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3432 ,  H01J37/3435

    Abstract: Embodiments of the present invention generally include a sputtering target capable of substantially reducing the amount of wasted material associated with conventional sputtering targets. In one embodiment, the sputtering target includes a fluidized bed of sputtering material that constantly maintains a planar sputtering surface throughout the sputtering process. In one embodiment, the fluidized bed of sputtering material is either periodically or constantly supplied with sputtering material to both maintain a planar sputtering surface and reduce downtime of the sputtering equipment.

    Abstract translation: 本发明的实施方案通常包括能够显着减少与常规溅射靶相关的浪费材料量的溅射靶。 在一个实施例中，溅射靶包括溅射材料的流化床，其在整个溅射过程中始终保持平面溅射表面。 在一个实施例中，溅射材料的流化床周期性地或恒定地提供溅射材料，以保持平面溅射表面并减少溅射设备的停机时间。

    SYSTEMS AND METHODS FOR TREATING FLAMMABLE EFFLUENT GASES FROM MANUFACTURING PROCESSES
    19.
    发明申请
    SYSTEMS AND METHODS FOR TREATING FLAMMABLE EFFLUENT GASES FROM MANUFACTURING PROCESSES 有权
    用于从制造过程中处理易燃气体的系统和方法

    公开(公告)号：US20090216061A1

    公开(公告)日：2009-08-27

    申请号：US12365886

    申请日：2009-02-04

    Applicant: Daniel O. Clark ,  Mehran Moalem ,  Robbert M. Vermeulen ,  Phil Chandler

    Inventor： Daniel O. Clark ,  Mehran Moalem ,  Robbert M. Vermeulen ,  Phil Chandler

    IPC: A62D3/30 ,  B01J19/00

    CPC classification number: B01D53/005 ,  B01D53/40 ,  B01D2257/108 ,  B01D2258/0216

    Abstract: A system for treating flammable effluent gas is provided. The system includes an exhaust conduit to carry the flammable effluent gas to an abatement unit, a control system coupled to the abatement unit to determine an operating parameter of the abatement unit, a bypass valve coupled to the exhaust conduit which is an operative responsive to the monitoring system, and a source of second gas to be mixed with the effluent gas diverted from the abatement unit when the bypass valve is operating in a bypass mode to provide a mixed gas having a flammability lower than the effluent gas. Methods of the invention as well as numerous other aspects are provided.

    Abstract translation: 提供了一种处理易燃废气的系统。 该系统包括用于将可燃性流出气体运送到减排单元的排气管道，耦合到减排单元以确定减排单元的操作参数的控制系统;联接到排气管道的旁通阀，该旁通阀是响应于 监测系统，以及当旁通阀以旁通模式操作时与从减排单元转移的废气混合的第二气体源，以提供具有低于废气的可燃性的混合气体。 提供了本发明的方法以及许多其它方面。

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