公开(公告)号：US07525304B1

公开(公告)日：2009-04-28

申请号：US11748207

申请日：2007-05-14

申请人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

发明人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

IPC分类号： G01R31/28 ,  G01R31/26

CPC分类号： G01R27/2605 ,  G01R31/2648

摘要： A method for determining an effective capacitance of a dielectric material, by forming first and second asymmetrical electrodes entirely within a field of the dielectric material, where the first electrode, the second electrode, and the field of the dielectric material are co-planar, neither the first electrode nor the second electrode are either electrically connected to ground or to each other, applying a first charge Q on the first electrode, measuring a first voltage change V1 on the first electrode, measuring a second voltage change V2 on the second electrode, depositing a second charge Q′ on the second electrode, measuring a third voltage change V3 on the first electrode, measuring a fourth voltage change V4 on the second electrode, calculating a first ground capacitance Cg1 by Cg1=(V2Q′−V4Q)/(V2V3−V1V4), calculating a second ground capacitance Cg2 by Cg2=(V3Q−V1Q′)/(V2V3−V1V4), and calculating an inter-electrode capacitance Cie by Cie=V3Cg1/(V4−V3)=V2Cg2/(V1−V2).

摘要翻译： 一种用于确定介电材料的有效电容的方法，通过在电介质材料的场内完全形成第一和第二不对称电极，其中第一电极，第二电极和电介质材料的场是共面的， 第一电极或第二电极或者电连接到地或彼此之间，在第一电极上施加第一电荷Q，测量第一电极上的第一电压变化V1，测量第二电极上的第二电压变化V2， 在第二电极上沉积第二电荷Q'，测量第一电极上的第三电压变化V3，测量第二电极上的第四电压变化V4，将第一接地电容Cg1计算为Cg1 =（V2Q'-V4Q）/（ V2V3-V1V4），通过Cg2 =（V3Q-V1Q'）/（V2V3-V1V4）计算第二接地电容Cg2，并且通过Cie = V3Cg1 /（V4-V3）= V2Cg2 /（V1 -V2）。

公开(公告)号：US07248062B1

公开(公告)日：2007-07-24

申请号：US10701112

申请日：2003-11-04

申请人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

发明人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/26

CPC分类号： G01R31/303 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

摘要翻译： 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

公开(公告)号：US07187186B2

公开(公告)日：2007-03-06

申请号：US11078669

申请日：2005-03-10

申请人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

发明人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

IPC分类号： G01R31/302

CPC分类号： G01R31/311 ,  G01R31/2648

摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

摘要翻译： 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

公开(公告)号：US07075318B1

公开(公告)日：2006-07-11

申请号：US10754332

申请日：2004-01-09

申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

IPC分类号： G01R31/302 ,  G01R27/26

CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

公开(公告)号：US06284050B1

公开(公告)日：2001-09-04

申请号：US09080905

申请日：1998-05-18

申请人： Jianou Shi ,  James C. Mitchener

发明人： Jianou Shi ,  James C. Mitchener

IPC分类号： C23C1600

CPC分类号： H01L21/02348 ,  B05D1/60 ,  B05D3/065 ,  C23C16/0227 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/0231 ,  H01L21/31058 ,  H01L21/312

摘要： An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The system includes an ultraviolet lamp and a tube-shaped monomer distribution system positioned over the wafer allowing ultraviolet irradiation of the wafer before, during and/or after deposition. Processes for depositing organic polymer films on semiconductor wafers are also provided. The processes include one or more depositions, one or more ultraviolet exposures, and one or more anneals.

摘要翻译： 提供了一种用于提高沉积在半导体晶片上的有机聚合物膜的粘附性，硬度和热稳定性的紫外线辅助化学气相沉积系统。 该系统包括紫外灯和位于晶片上方的管状单体分配系统，允许在沉积之前，期间和/或之后对晶片进行紫外线照射。 还提供了用于在半导体晶片上沉积有机聚合物膜的工艺。 这些过程包括一个或多个沉积，一个或多个紫外线曝光和一个或多个退火。

公开(公告)号：US20130003050A1

公开(公告)日：2013-01-03

申请号：US13530774

申请日：2012-06-22

申请人： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

发明人： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

IPC分类号： G01B11/06 ,  G01N21/88 ,  G01N21/47

CPC分类号： G01B11/0633 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/1719 ,  G01N2021/8427

摘要： The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

摘要翻译： 本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。 反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。 提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。

公开(公告)号：US08004290B1

公开(公告)日：2011-08-23

申请号：US12061447

申请日：2008-04-02

申请人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

发明人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

IPC分类号： G01R27/26 ,  G01R31/26

CPC分类号： G01R31/129 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

摘要翻译： 公开了一种用于确定介电层性质的方法和装置。 绝缘层厚度，电介质泄漏或其他电信息等介质层性质可以针对半导体或导电基片上的多层膜堆叠来确定。 薄膜叠层可以包括在基底和半导体或导电材料的中间层之间的第一介电层，以及布置成中间层位于第一和第二介电层之间的第二介电层。 电介质层的性质可以通过以下步骤来确定：a）在第二介电层的暴露表面上的一个或多个局部区域沉积电荷; b）执行所述一个或多个局部区域处的电量的测量; 以及c）从所述一个或多个测量确定所述第二电介质层的特性。

公开(公告)号：US07719294B1

公开(公告)日：2010-05-18

申请号：US11460505

申请日：2006-07-27

申请人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

发明人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/26

CPC分类号： G01R31/303 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.

摘要翻译： 提供被配置为执行用于确定样本的属性的非接触方法的系统。 被配置为执行用于确定样本的属性的非接触方法的一个系统包括被配置为向所述样本上的聚焦点提供刺激的聚焦偏置装置。 该系统还包括被配置为测量样品上的测量点的参数的传感器。 测量点与聚焦点重叠。 该系统还包括处理器，该处理器被配置为根据该参数确定样本的属性。

公开(公告)号：US07397254B1

公开(公告)日：2008-07-08

申请号：US11277053

申请日：2006-03-21

申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

IPC分类号： G01R31/302

CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

公开(公告)号：US07345306B1

公开(公告)日：2008-03-18

申请号：US11421855

申请日：2006-06-02

申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

IPC分类号： H01L23/58

CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。