公开(公告)号：US20070109003A1

公开(公告)日：2007-05-17

申请号：US11465888

申请日：2006-08-21

申请人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

发明人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

IPC分类号： G01R31/02

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

摘要翻译： 提供了用于测量晶片性能的测试垫，方法和系统。 形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

公开(公告)号：US07525304B1

公开(公告)日：2009-04-28

申请号：US11748207

申请日：2007-05-14

申请人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

发明人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

IPC分类号： G01R31/28 ,  G01R31/26

CPC分类号： G01R27/2605 ,  G01R31/2648

摘要： A method for determining an effective capacitance of a dielectric material, by forming first and second asymmetrical electrodes entirely within a field of the dielectric material, where the first electrode, the second electrode, and the field of the dielectric material are co-planar, neither the first electrode nor the second electrode are either electrically connected to ground or to each other, applying a first charge Q on the first electrode, measuring a first voltage change V1 on the first electrode, measuring a second voltage change V2 on the second electrode, depositing a second charge Q′ on the second electrode, measuring a third voltage change V3 on the first electrode, measuring a fourth voltage change V4 on the second electrode, calculating a first ground capacitance Cg1 by Cg1=(V2Q′−V4Q)/(V2V3−V1V4), calculating a second ground capacitance Cg2 by Cg2=(V3Q−V1Q′)/(V2V3−V1V4), and calculating an inter-electrode capacitance Cie by Cie=V3Cg1/(V4−V3)=V2Cg2/(V1−V2).

摘要翻译： 一种用于确定介电材料的有效电容的方法，通过在电介质材料的场内完全形成第一和第二不对称电极，其中第一电极，第二电极和电介质材料的场是共面的， 第一电极或第二电极或者电连接到地或彼此之间，在第一电极上施加第一电荷Q，测量第一电极上的第一电压变化V1，测量第二电极上的第二电压变化V2， 在第二电极上沉积第二电荷Q'，测量第一电极上的第三电压变化V3，测量第二电极上的第四电压变化V4，将第一接地电容Cg1计算为Cg1 =（V2Q'-V4Q）/（ V2V3-V1V4），通过Cg2 =（V3Q-V1Q'）/（V2V3-V1V4）计算第二接地电容Cg2，并且通过Cie = V3Cg1 /（V4-V3）= V2Cg2 /（V1 -V2）。

公开(公告)号：US08004290B1

公开(公告)日：2011-08-23

申请号：US12061447

申请日：2008-04-02

申请人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

发明人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

IPC分类号： G01R27/26 ,  G01R31/26

CPC分类号： G01R31/129 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

摘要翻译： 公开了一种用于确定介电层性质的方法和装置。 绝缘层厚度，电介质泄漏或其他电信息等介质层性质可以针对半导体或导电基片上的多层膜堆叠来确定。 薄膜叠层可以包括在基底和半导体或导电材料的中间层之间的第一介电层，以及布置成中间层位于第一和第二介电层之间的第二介电层。 电介质层的性质可以通过以下步骤来确定：a）在第二介电层的暴露表面上的一个或多个局部区域沉积电荷; b）执行所述一个或多个局部区域处的电量的测量; 以及c）从所述一个或多个测量确定所述第二电介质层的特性。

公开(公告)号：US07345306B1

公开(公告)日：2008-03-18

申请号：US11421855

申请日：2006-06-02

申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

IPC分类号： H01L23/58

CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。

公开(公告)号：US07098050B1

公开(公告)日：2006-08-29

申请号：US10974270

申请日：2004-10-27

申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

IPC分类号： H01L31/26

CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。

公开(公告)号：US07893703B2

公开(公告)日：2011-02-22

申请号：US11465893

申请日：2006-08-21

申请人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

发明人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/308

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

摘要翻译： 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

公开(公告)号：US20070069759A1

公开(公告)日：2007-03-29

申请号：US11465893

申请日：2006-08-21

申请人： Jeffrey Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

发明人： Jeffrey Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/26

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

摘要翻译： 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

公开(公告)号：US06909291B1

公开(公告)日：2005-06-21

申请号：US10606066

申请日：2003-06-24

申请人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

发明人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

IPC分类号： G01N27/00 ,  G01R35/00 ,  G01R31/02

CPC分类号： G01N27/002

摘要： A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

摘要翻译： 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数，使用非接触电压传感器测量样品的电压，以及根据测量的电压确定传感器的功函数校正因子。 反过来，校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中，导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地，电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。

公开(公告)号：US5961851A

公开(公告)日：1999-10-05

申请号：US626451

申请日：1996-04-02

申请人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi ,  Gerald Cox

发明人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi ,  Gerald Cox

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/32192

摘要： A method of removing material from a substrate, and a plasma discharge device wherein a plasma is excited by microwave energy having an electric field which is azimuthally and axially uniform in relation to the plasma tube. The microwave cavity is divided longitudinally into sections by conducting partitions, each of which is separately fed with microwave energy, and the plasma tube extends through openings in the partitions.

摘要翻译： 从衬底去除材料的方法和等离子体放电装置，其中等离子体由具有相对于等离子体管的方位角和轴向均匀的电场的微波能量激发。 微波腔通过导电隔板纵向分成几个部分，每个隔板分别供给微波能量，等离子体管延伸穿过隔板中的开口。

公开(公告)号：US07538333B1

公开(公告)日：2009-05-26

申请号：US11460517

申请日：2006-07-27

申请人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

发明人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： H01J37/30 ,  H01J37/317 ,  G01R31/26

CPC分类号： G01R31/303 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

摘要翻译： 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。