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    Method and apparatus for determining dielectric layer properties
    1.
    发明授权
    Method and apparatus for determining dielectric layer properties 有权
    用于确定介电层性质的方法和装置

    公开(公告)号：US08004290B1

    公开(公告)日：2011-08-23

    申请号：US12061447

    申请日：2008-04-02

    申请人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

    发明人： Xiafang Zhang ,  Nanchang Zhu ,  Yiping Feng ,  Min Xiang ,  Jianou Shi

    IPC分类号： G01R27/26 ,  G01R31/26

    CPC分类号： G01R31/129 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and apparatus for determining dielectric layer properties are disclosed. Dielectric layer properties such as dielectric thickness, dielectric leakage or other electrical information may be determined for a multilayer film stack on a semiconducting or conducting substrate. The film stack may comprise a first dielectric layer between the substrate and an intermediate layer of semiconducting or conducting material, and a second dielectric layer disposed such that the intermediate layer is between the first and second dielectric layers. The dielectric layer properties may be determined by a) depositing electrical charge at one or more localized regions on an exposed surface of the second dielectric layer; b) performing a measurement of an electrical quantity at the one or more localized regions; and c) determining a property of the second dielectric layer from the one or more measurements.

    摘要翻译： 公开了一种用于确定介电层性质的方法和装置。 绝缘层厚度，电介质泄漏或其他电信息等介质层性质可以针对半导体或导电基片上的多层膜堆叠来确定。 薄膜叠层可以包括在基底和半导体或导电材料的中间层之间的第一介电层，以及布置成中间层位于第一和第二介电层之间的第二介电层。 电介质层的性质可以通过以下步骤来确定：a）在第二介电层的暴露表面上的一个或多个局部区域沉积电荷; b）执行所述一个或多个局部区域处的电量的测量; 以及c）从所述一个或多个测量确定所述第二电介质层的特性。

    Test Pads, Methods and Systems for Measuring Properties of a Wafer
    2.
    发明申请
    Test Pads, Methods and Systems for Measuring Properties of a Wafer 审中-公开
    测试垫，测量硅片性能的方法和系统

    公开(公告)号：US20070109003A1

    公开(公告)日：2007-05-17

    申请号：US11465888

    申请日：2006-08-21

    申请人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

    发明人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

    IPC分类号： G01R31/02

    CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

    摘要翻译： 提供了用于测量晶片性能的测试垫，方法和系统。 形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

    Measurement of effective capacitance
    3.
    发明授权
    Measurement of effective capacitance 失效
    有效电容的测量

    公开(公告)号：US07525304B1

    公开(公告)日：2009-04-28

    申请号：US11748207

    申请日：2007-05-14

    申请人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

    发明人： Yiping Feng ,  Jianou Shi ,  Xiafang Zhang

    IPC分类号： G01R31/28 ,  G01R31/26

    CPC分类号： G01R27/2605 ,  G01R31/2648

    摘要： A method for determining an effective capacitance of a dielectric material, by forming first and second asymmetrical electrodes entirely within a field of the dielectric material, where the first electrode, the second electrode, and the field of the dielectric material are co-planar, neither the first electrode nor the second electrode are either electrically connected to ground or to each other, applying a first charge Q on the first electrode, measuring a first voltage change V1 on the first electrode, measuring a second voltage change V2 on the second electrode, depositing a second charge Q′ on the second electrode, measuring a third voltage change V3 on the first electrode, measuring a fourth voltage change V4 on the second electrode, calculating a first ground capacitance Cg1 by Cg1=(V2Q′−V4Q)/(V2V3−V1V4), calculating a second ground capacitance Cg2 by Cg2=(V3Q−V1Q′)/(V2V3−V1V4), and calculating an inter-electrode capacitance Cie by Cie=V3Cg1/(V4−V3)=V2Cg2/(V1−V2).

    摘要翻译： 一种用于确定介电材料的有效电容的方法，通过在电介质材料的场内完全形成第一和第二不对称电极，其中第一电极，第二电极和电介质材料的场是共面的， 第一电极或第二电极或者电连接到地或彼此之间，在第一电极上施加第一电荷Q，测量第一电极上的第一电压变化V1，测量第二电极上的第二电压变化V2， 在第二电极上沉积第二电荷Q'，测量第一电极上的第三电压变化V3，测量第二电极上的第四电压变化V4，将第一接地电容Cg1计算为Cg1 =（V2Q'-V4Q）/（ V2V3-V1V4），通过Cg2 =（V3Q-V1Q'）/（V2V3-V1V4）计算第二接地电容Cg2，并且通过Cie = V3Cg1 /（V4-V3）= V2Cg2 /（V1 -V2）。

    Substrate conditioning for corona charge control
    4.
    发明授权
    Substrate conditioning for corona charge control 有权
    基底调理电晕充电控制

    公开(公告)号：US07724003B1

    公开(公告)日：2010-05-25

    申请号：US11938355

    申请日：2007-11-12

    申请人： NanChang Zhu ,  Jainou Shi ,  Min Xiang ,  ZiangHua Liu ,  Goujun Zhang ,  Xiafang Zhang ,  Shiyou Pei ,  Liang-Guo Wang ,  Joseph R. Laia, Jr.

    发明人： NanChang Zhu ,  Jainou Shi ,  Min Xiang ,  ZiangHua Liu ,  Goujun Zhang ,  Xiafang Zhang ,  Shiyou Pei ,  Liang-Guo Wang ,  Joseph R. Laia, Jr.

    IPC分类号： G01R31/26

    CPC分类号： H01L22/14

    摘要： A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.

    摘要翻译： 用于在基板表面上的测试区域读取的测量系统。 室形成环境，表面处理站在测试区域中分配稳定化学品，电荷沉积站在测试区域中沉积电荷，QV测量站在测试区域进行基于QV的测量。 表面处理站，电荷沉积站和QV测量站都与室内的基板相互作用。 以这种方式，通过用稳定化学品控制电荷扩散，在衬底上进行可靠的QV测量。 通过减少时间趋势对具有反应性电介质的衬底（例如氮氧化硅和高k表面）的影响也可改善QV测量稳定性。

    Corona based charge voltage measurement
    5.
    发明授权
    Corona based charge voltage measurement 有权
    基于电晕的充电电压测量

    公开(公告)号：US07345306B1

    公开(公告)日：2008-03-18

    申请号：US11421855

    申请日：2006-06-02

    申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

    发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

    IPC分类号： H01L23/58

    CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

    摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

    摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。

    Corona based charge voltage measurement
    6.
    发明授权
    Corona based charge voltage measurement 有权
    基于电晕的充电电压测量

    公开(公告)号：US07098050B1

    公开(公告)日：2006-08-29

    申请号：US10974270

    申请日：2004-10-27

    申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

    发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

    IPC分类号： H01L31/26

    CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

    摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

    摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。