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    INORGANIC MULTILAYER STACK AND METHODS AND COMPOSITIONS RELATING THERETO
    11.
    发明申请
    INORGANIC MULTILAYER STACK AND METHODS AND COMPOSITIONS RELATING THERETO 审中-公开
    无机多层堆叠及其相关方法和组合物

    公开(公告)号：US20140060648A1

    公开(公告)日：2014-03-06

    申请号：US13981317

    申请日：2012-01-27

    申请人： Ravi Prasad ,  Dennis R. Hollars

    发明人： Ravi Prasad ,  Dennis R. Hollars

    IPC分类号： H01L31/0203 ,  H01L21/56 ,  C23C16/44 ,  G02F1/167 ,  G02F1/1339 ,  C25B9/08 ,  H01L23/00 ,  G02F1/01

    摘要： A multilayer stack is described. The multilayer stack includes: (i) one or more inorganic barrier layers for reducing transport of gas or vapor molecules therethrough; (ii) an inorganic reactive layer disposed adjacent to one or more of the inorganic barrier layers, and the reactive layer capable of reacting with the gas or the vapor molecules; and (iii) wherein, in an operational state of the multilayer stack, the vapor or the gas molecules that diffuse through one or more of the inorganic barrier layers react with the inorganic reactive layer, and thereby allow said multilayer stack to be substantially impervious to the gas or the vapor molecules.

    摘要翻译： 描述了多层堆叠。 多层堆叠包括：（i）一个或多个无机阻挡层，用于减少气体或蒸气分子通过其传输; （ii）与一个或多个无机阻挡层相邻设置的无机反应层和能够与气体或蒸汽分子反应的反应层; 和（iii）其中，在多层堆叠的操作状态下，扩散通过一个或多个无机阻挡层的蒸汽或气体分子与无机反应层反应，从而允许所述多层堆叠基本上不渗透 气体或蒸气分子。

    Manufacturing apparatus and method for large-scale production of thin-film solar cells
    12.
    发明授权
    Manufacturing apparatus and method for large-scale production of thin-film solar cells 有权
    用于大规模生产薄膜太阳能电池的制造装置和方法

    公开(公告)号：US08618410B2

    公开(公告)日：2013-12-31

    申请号：US13173507

    申请日：2011-06-30

    申请人： Dennis R. Hollars

    发明人： Dennis R. Hollars

    IPC分类号： H01L31/18 ,  H01L31/0264

    CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

    摘要翻译： 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓二硒化物（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

    Heating system for high throughput sputtering
    15.
    发明授权
    Heating system for high throughput sputtering 失效
    用于高通量溅射的加热系统

    公开(公告)号：US5972184A

    公开(公告)日：1999-10-26

    申请号：US45975

    申请日：1993-04-09

    申请人： Dennis R. Hollars ,  Delbert F. Waltrip ,  Robert B. Zubeck ,  Josef Bonigut ,  Robert M. Smith ,  Gary L. Payne

    发明人： Dennis R. Hollars ,  Delbert F. Waltrip ,  Robert B. Zubeck ,  Josef Bonigut ,  Robert M. Smith ,  Gary L. Payne

    IPC分类号： C23C14/02 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  G05B19/05 ,  G05B19/418 ,  G11B5/85 ,  G11B5/851 ,  H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/6776 ,  C23C14/02 ,  C23C14/028 ,  C23C14/34 ,  C23C14/35 ,  C23C14/352 ,  C23C14/50 ,  C23C14/54 ,  C23C14/541 ,  C23C14/568 ,  G05B19/052 ,  G05B19/4189 ,  G11B5/851 ,  H01J37/32733 ,  H01J37/3405 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67276 ,  H01L21/67712 ,  H01L21/67721 ,  G05B2219/31225 ,  G05B2219/31237 ,  G05B2219/32413 ,  G05B2219/34029 ,  G05B2219/34279 ,  G05B2219/34287 ,  G05B2219/34304 ,  G05B2219/50363 ,  Y02P90/18 ,  Y02P90/28

    摘要： A high throughput sputtering apparatus which provides a single or multi-layer coating to the surface of a plurality of substrates. The apparatus comprises a plurality of buffer and sputtering chambers which include an input end and an output end. The substrates are transported through the chambers at varying rates of speed such that the rate of speed of a pallet from the input end to the output end is a constant for each of the pallets. The high throughput sputtering apparatus also includes a transport system which transports the substrates through the sputtering chambers at variable velocities, a high capacity vacuum pump system which evacuates the ambient pressure within the sputtering chambers to a vacuum level within a pressure range sufficient to enable sputtering operation, a substrate heating system which heats the substrates to a temperature conducive to sputtering the coatings thereon and provides a substantially uniform temperature profile over the surface of the substrates; and an electronic control system which provides control signals to and for receiving feedback input from other components of the apparatus. The electronic control system is programmable to control the sputtering chambers, the transport system, the vacuum pump system, and the substrate heating system. The substrate heating system efficiently maintains a desired substrate temperature by minimizing radiative heat losses as the substrates proceed through the sputtering apparatus. The high throughput sputtering apparatus provides substrates to be sputtered in a rapid and uniform heating process to optimize film integrity during the sputtering steps, provides successive layers of thin films on the substrates, and removes the sputtered substrates without contaminating the environment.

    摘要翻译： 一种高通量溅射装置，其向多个基板的表面提供单层或多层涂层。 该装置包括多个缓冲和溅射室，其包括输入端和输出端。 基板以不同的速度传送通过室，使得托盘从输入端到输出端的速度速率对于每个托盘是恒定的。 高通量溅射装置还包括以可变速度输送基板通过溅射室的输送系统，将真空室内的环境压力排出到足以实现溅射操作的压力范围内的真空度的高容量真空泵系统 衬底加热系统，其将衬底加热到​​有利于溅射其上的涂层的温度，并在衬底的表面上提供基本均匀的温度分布; 以及电子控制系统，其向控制信号提供控制信号并从该设备的其他部件接收反馈输入。 电子控制系统可编程控制溅射室，输送系统，真空泵系统和基板加热系统。 当衬底通过溅射装置进行时，衬底加热系统通过最小化辐射热损失来有效地保持期望的衬底温度。 高通量溅射装置提供在快速且均匀的加热过程中溅射的基板，以在溅射步骤期间优化膜的完整性，在基板上提供连续的薄膜层，并且在不污染环境的情况下去除溅射的基板。

    Interferometric flying height measuring device including an addition of a spacer layer
    16.
    发明授权
    Interferometric flying height measuring device including an addition of a spacer layer 失效
    干涉飞行高度测量装置，包括间隔层的添加

    公开(公告)号：US5473431A

    公开(公告)日：1995-12-05

    申请号：US57054

    申请日：1993-04-29

    申请人： Dennis R. Hollars ,  David P. Danson

    发明人： Dennis R. Hollars ,  David P. Danson

    IPC分类号： G01B9/02 ,  G01B11/14 ,  G11B21/21

    CPC分类号： G01B11/14

    摘要： A device for accurately measuring flying heights of a read/write head in a disk drive down to zero microinches using interferometry, wherein the flying height of the head above the disk surface is calculated by directing white light to the under side of a rotating disk. An interference pattern is obtained by reflecting a first portion of the light off of the top surface of the disk and reflecting a second portion of the light off of the underside of the read/write head, and then recombining the first and second portions of light. The interference pattern is then input to a spectrophotometer, which creates an intensity profile from which the flying height of the read/write head above the disk may be calculated. A spacer layer is provided on the upper surface of the disk to increase the phase difference of the first and second portions of light, thereby allowing clear interpretation of the interference pattern at extremely low flying heights.

    摘要翻译： 一种用于使用干涉测量将磁盘驱动器中的读/写头的飞行高度精确地测量为零微英寸的装置，其中通过将白光引导到旋转盘的下侧来计算头部在盘表面上方的飞行高度。 通过将光的第一部分反射离开盘的顶表面并将光的第二部分反射离开读/写头的下侧，然后将光的第一和第二部分重新组合来获得干涉图案 。 然后将干涉图案输入到分光光度计，其产生强度分布，可以从该强度分布计算盘上的读/写头的飞行高度。 间隔层设置在盘的上表面上以增加第一和第二部分光的相位差，从而允许在极低的飞行高度处清楚地解释干涉图案。

    Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells
    18.
    发明申请
    Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells 审中-公开
    薄膜太阳能电池大规模生产的制造装置和方法

    公开(公告)号：US20100278683A1

    公开(公告)日：2010-11-04

    申请号：US12835573

    申请日：2010-07-13

    申请人： Dennis R. Hollars

    发明人： Dennis R. Hollars

    IPC分类号： B22F3/00 ,  B22D25/00

    CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

    摘要翻译： 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓二硒化物（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

    Manufacturing method for large-scale production of thin-film solar cells
    19.
    发明授权
    Manufacturing method for large-scale production of thin-film solar cells 有权
    大规模生产薄膜太阳能电池的制造方法

    公开(公告)号：US07544884B2

    公开(公告)日：2009-06-09

    申请号：US10973714

    申请日：2004-10-25

    申请人： Dennis R. Hollars

    发明人： Dennis R. Hollars

    IPC分类号： H01L31/04

    CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

    摘要翻译： 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓硒（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

    Cylindrical carriage sputtering system
    20.
    发明授权
    Cylindrical carriage sputtering system 失效
    圆柱形托架溅射系统

    公开(公告)号：US06231732B1

    公开(公告)日：2001-05-15

    申请号：US09284210

    申请日：1999-09-02

    申请人： Dennis R. Hollars ,  Robert B. Zubeck

    发明人： Dennis R. Hollars ,  Robert B. Zubeck

    IPC分类号： C23L1434

    CPC分类号： H01J37/32733 ,  C23C14/35 ,  C23C14/50 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  C23C14/566 ,  C23C14/568 ,  H01J37/34

    摘要： A cylindrical carriage sputtering system for disk, wafer, and flat panel substrates (20) comprising a cylindrical shaped vacuum sealed passageway formed by two concentric inner (11) and outer hollow cylinders (12), along with a top and a bottom sealing flange (13, 14). A central hollow cylinder (15), disposed between the inner (11) and outer cylinder (12), includes substrate-carrying openings and serves as a cylindrical carriage which substantially fills the sealed passageway and is rotatable in predetermined steps. Novel substrate processing devices (16) for deposition, heating, and cooling are attached around the circumference of the inner and outer cylindrical walls. Vacuum pumps are located between substrate processing devices (16). The openings in the cylindrical carriage are each fitted with thermally isolated substrate holders (19) for supporting a multiplicity of substrates (20). Unique entrance and exit vacuum load-locks with integrated robotic means are provided for transferring disk substrates (20) into and out of the system. The sputtering system is designed to allow the processing of substrates (20) at temperatures of up to about 1000° C. on either stationary or pass-through sputtering modes.

    摘要翻译： 一种用于盘，晶片和平板基板（20）的圆柱形托架溅射系统，包括由两个同心的内部（11）和外部中空圆柱体（12）形成的圆柱形真空密封通道，以及顶部和底部密封凸缘 13,14）。 设置在内部（11）和外部气缸（12）之间的中央空心圆筒（15）包括基板承载开口，并且用作基本上填充密封通道并且可以预定步骤旋转的圆柱形滑架。 用于沉积，加热和冷却的新型基板处理装置（16）被附接在内圆柱体和外圆柱壁的圆周周围。 真空泵位于基板处理装置（16）之间。 圆柱形托架中的开口各自装有用于支撑多个基板（20）的热隔离的基板保持器（19）。 提供具有集成机器人装置的独特的入口和出口真空负载锁，用于将盘基片（20）转入和离开系统。 溅射系统设计成允许在静止或直通溅射模式下在高达约1000℃的温度下处理衬底（20）。