公开(公告)号：US20170084610A1

公开(公告)日：2017-03-23

申请号：US15264951

申请日：2016-09-14

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO

IPC: H01L27/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/32 ,  H01L29/861 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/0804 ,  H01L21/263 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/861 ,  H01L29/8613

Abstract: A semiconductor device includes a semiconductor substrate having a drift layer, a base layer, a collector layer and a cathode layer. The semiconductor substrate includes a cell region and an outer peripheral region surrounding the cell region. The cell region includes an IGBT region and a diode region. The semiconductor substrate further includes a damage region arranged in the diode region and a part of the outer peripheral region adjacent to a boundary between the outer peripheral region and the diode region. A length, in a longitudinal direction of the diode region, of the part of the outer peripheral region, in which the damage region is arranged, is equal to or more than twice of a thickness of the semiconductor substrate. As a result, recovery characteristic is improved in a portion of the diode region adjacent to the boundary between the outer peripheral region and the diode region.

公开(公告)号：US20160056810A1

公开(公告)日：2016-02-25

申请号：US14781323

申请日：2014-04-07

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO

IPC: H03K17/16 ,  H03K17/567 ,  H01L27/06

CPC classification number: H03K17/168 ,  H01L27/0652 ,  H01L27/0722 ,  H01L27/0727 ,  H03K17/0828 ,  H03K17/567

Abstract: A semiconductor device includes: a diode-integrated IGBT element in a same semiconductor substrate having a diode element and an IGBT element driven by a drive signal towards a gate; a sense element having a diode sense element with a current proportional to a current through the diode element and an IGBT sense element with a current proportional to a current through the IGBT element; a switch element connected to a first current pathway through the diode sense element and to a second current pathway different from the first current pathway. The switch element is turned off to control the second current pathway to be discontinuous with the first current pathway when no current flows through the diode sense element, and is turned on to control the second current pathway to be continuous with the first current pathway and apply a current when a current flows through the diode sense element.

Abstract translation: 半导体器件包括：在同一半导体衬底中的具有二极管元件的二极管集成IGBT元件和由朝向栅极的驱动信号驱动的IGBT元件; 感测元件具有二极管感测元件，其电流与通过二极管元件的电流成比例;以及IGBT感测元件，其电流与通过IGBT元件的电流成比例; 连接到通过二极管感测元件的第一电流通路和不同于第一电流通路的第二电流通路的开关元件。 当没有电流流过二极管感测元件时，开关元件被关断以控制第二电流通路与第一电流通路不连续，并且导通以控制第二电流通路与第一电流通路连续并施加 当电流流过二极管感测元件时的电流。

公开(公告)号：US20230038806A1

公开(公告)日：2023-02-09

申请号：US17969023

申请日：2022-10-19

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/06 ,  H01L29/808 ,  H01L27/06 ,  H01L29/78 ,  H03K17/687 ,  H02M1/08

Abstract: A semiconductor device includes a MOSFET including a drift layer, a channel layer, a trench gate structure, a source layer, a drain layer, a source electrode, and a drain electrode. The trench gate structure includes a trench penetrating the channel layer and protruding into the drift layer, a gate insulating film disposed on a wall surface of the trench, and a gate electrode disposed on the gate insulating film. A portion of the trench protruding into the drift layer is entirely covered with a well layer, and the well layer is connected to the channel layer.

公开(公告)号：US20180294250A1

公开(公告)日：2018-10-11

申请号：US15570876

申请日：2016-05-27

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO ,  Hiromitsu TANABE

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/367 ,  H01L29/739 ,  H01L29/06 ,  H01L27/06 ,  H02M7/00

CPC classification number: H01L25/0655 ,  H01L23/367 ,  H01L24/06 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L25/07 ,  H01L25/18 ,  H01L27/0635 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/14252 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/5387 ,  H02M2001/327 ,  H02P27/06 ,  H01L2924/00012

Abstract: The present disclosure provides a semiconductor chip. The semiconductor chip includes a switching element having a gate electrode, a first pad, and a second pad. The first control pad is electrically connected to the gate electrode and applied with a voltage controlling the switching element to switch on or switch off. The second control pad provides a current path of a control current flowing between the first control pad and the second control pad when the switching element is in a switch-on state. One of the first control pad or the second control pad includes two pad components and a remaining one of the first control pad or the second control pad is disposed between the two pad components of the one of the first control pad or the second control pad.

公开(公告)号：US20160133597A1

公开(公告)日：2016-05-12

申请号：US14898531

申请日：2014-06-16

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/49 ,  H01L23/4334 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: A semiconductor device includes: a semiconductor chip having a switching element and multiple pads electrically connected to the switching element; and multiple lead terminals electrically connected to the respective pads. The multiple lead terminals include a control terminal used for control of on/off operation of the switching element, and a main terminal into which a main current flows when the switching element is in an on state. A coupling coefficient k falls within a range of −3%≦k≦2%, where the coupling coefficient k is defined by a parasitic inductance Lg in a current path of a control current flowing in the control terminal, a parasitic inductance Lo in a current path of the main current, and a mutual inductance Ms of the parasitic inductances Lg and Lo.

Abstract translation: 一种半导体器件包括：具有开关元件的半导体芯片和与开关元件电连接的多个焊盘; 以及电连接到各个焊盘的多个引线端子。 多个引线端子包括用于控制开关元件的导通/截止操作的控制端子和当开关元件处于导通状态时主电流流过的主端子。 耦合系数k落在-3％＆nlE; k＆nlE; 2％的范围内，其中耦合系数k由在控制端子中流动的控制电流的电流路径中的寄生电感Lg定义，寄生电感Lo 主电流的电流路径，以及寄生电感Lg和Lo的互感Ms。

公开(公告)号：US20130334567A1

公开(公告)日：2013-12-19

申请号：US13869155

申请日：2013-04-24

Applicant: DENSO CORPORATION

Inventor： Kenji KOUNO

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L29/7397 ,  H01L2924/0002 ,  H02M1/32 ,  H02M2001/0009 ,  H03K17/0828 ,  H03K17/145 ,  H03K2217/0027 ,  H01L2924/00

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.