公开(公告)号：US20120049270A1

公开(公告)日：2012-03-01

申请号：US12871038

申请日：2010-08-30

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L21/823487 ,  H01L29/0626 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/6609 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7808 ,  H01L29/7813

摘要： A method for forming a field effect power semiconductor is provided. The method includes providing a semiconductor body, a conductive region arranged next to a main surface of the semiconductor body, and an insulating layer arranged on the main horizontal surface. A narrow trench is etched through the insulating layer to expose the conductive region. A polycrystalline semiconductor layer is deposited and a vertical poly-diode structure is formed. The polycrystalline semiconductor layer has a minimum vertical thickness of at least half of the maximum horizontal extension of the narrow trench. A polycrystalline region which forms at least a part of a vertical poly-diode structure is formed in the narrow trench by maskless back-etching of the polycrystalline semiconductor layer. Further, a semiconductor device with a trench poly-diode is provided.

摘要翻译： 提供了一种用于形成场效应功率半导体的方法。 该方法包括提供半导体本体，邻近半导体主体的主表面布置的导电区域和布置在主水平表面上的绝缘层。 通过绝缘层蚀刻窄沟槽以暴露导电区域。 沉积多晶半导体层并形成垂直多晶二极管结构。 多晶半导体层的最小垂直厚度为窄沟槽的最大水平延伸的至少一半。 通过多晶半导体层的无掩模背面蚀刻，在窄沟槽中形成形成垂直多晶二极管结构的至少一部分的多晶区域。 此外，提供了具有沟槽多晶二极管的半导体器件。

公开(公告)号：US20110156095A1

公开(公告)日：2011-06-30

申请号：US12977755

申请日：2010-12-23

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/4236

摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.

摘要翻译： 半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。 第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。 第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

公开(公告)号：US08564098B2

公开(公告)日：2013-10-22

申请号：US12718381

申请日：2010-03-05

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L21/02

CPC分类号： H01L29/739 ,  H03K17/0412

摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.

摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

公开(公告)号：US07459365B2

公开(公告)日：2008-12-02

申请号：US11540922

申请日：2006-09-29

申请人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

发明人： Michael Rüb ,  Herbert Schäfer ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier ,  Roland Rupp ,  Manfred Pippan ,  Hans Weber ,  Frank Pfirsch ,  Franz Hirler ,  Hans-Joachim Schulze

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7849

摘要： The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

摘要翻译： 公开了具有半导体主体的半导体部件的制造，其中布置有具有在垂直方向上延伸并且非常深地延伸到半导体本体中的截面的非常薄的电介质层。 在一种方法中，在从半导体主体的前侧开始的漂移区域中形成沟槽，在沟槽的至少一部分侧壁上产生牺牲层，并且沟槽的至少一部分填充有 半导体材料被选择为使得沟槽中的半导体材料的净掺杂剂电荷的商和半导体材料和漂移区域之间的沟槽的侧壁上的牺牲层的总面积小于击穿电荷 的半导体材料，并且牺牲层被电介质代替。

公开(公告)号：US20130341673A1

公开(公告)日：2013-12-26

申请号：US13529166

申请日：2012-06-21

申请人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

发明人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

IPC分类号： H01L29/739

CPC分类号： H03K17/127 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397 ,  H03K3/01 ,  H03K17/66

摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region.

摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一导电类型互补的第二导电类型的第二发射极区域和布置在半导体本体中的第二导电类型的漂移区域。 第一和第二发射极区域布置在漂移区域和第一电极之间并且各自连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区域和身体区域。 第一导电类型的浮置寄生区域设置在单元区域的外部。

公开(公告)号：US07696600B2

公开(公告)日：2010-04-13

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/10 ,  H01L29/72

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20130140616A1

公开(公告)日：2013-06-06

申请号：US13312180

申请日：2011-12-06

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L27/06

CPC分类号： H01L23/62 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment of an integrated circuit, the integrated circuit includes a power transistor with a power control terminal, a first power load terminal and a second power load terminal. The integrated circuit further includes an auxiliary transistor with an auxiliary control terminal, a first auxiliary load terminal and a second auxiliary load terminal. The first auxiliary load terminal is electrically coupled to the power control terminal. The integrated circuit further includes a capacitor with a first capacitor electrode, a second capacitor electrode and a capacitor dielectric layer. The capacitor dielectric layer includes at least one of a ferroelectric material and a paraelectric material. The first capacitor electrode is electrically coupled to the auxiliary control terminal.

摘要翻译： 在集成电路的一个实施例中，集成电路包括具有功率控制端子的功率晶体管，第一功率负载端子和第二功率负载端子。 集成电路还包括具有辅助控制端子的辅助晶体管，第一辅助负载端子和第二辅助负载端子。 第一辅助负载端子电耦合到功率控制端子。 集成电路还包括具有第一电容器电极，第二电容器电极和电容器电介质层的电容器。 电容介质层包括铁电材料和顺电材料中的至少一种。 第一电容器电极电耦合到辅助控制端子。

公开(公告)号：US08263450B2

公开(公告)日：2012-09-11

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/00

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20070170514A1

公开(公告)日：2007-07-26

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/76

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。