摘要:
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
摘要:
The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.
摘要:
A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
摘要:
A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
摘要:
A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要:
A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要:
A semiconductor component (1) with charge compensation structure (3) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
摘要:
The invention relates to a power semiconductor component (1) with charge compensation structure (3) and a method for the fabrication thereof. For this purpose, the power semiconductor component (1) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
摘要:
A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.
摘要:
Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.