公开(公告)号：US09132412B2

公开(公告)日：2015-09-15

申请号：US14035834

申请日：2013-09-24

Applicant: Entegris, Inc.

Inventor： J. Donald Carruthers ,  Karl Boggs ,  Luping Wang ,  Shaun M. Wilson ,  Jose I. Arno ,  Paul J. Marganski ,  Steven M. Bilodeau ,  Peng Zou ,  Brian Bobita ,  Joseph D. Sweeney ,  Douglas Edwards

IPC: B01J20/26 ,  B01J20/28 ,  F25B17/08 ,  F25B27/00 ,  F25B35/04 ,  B01J20/20 ,  B01J20/30 ,  C09K5/04 ,  F25B37/00

CPC classification number: B01J20/26 ,  B01J20/20 ,  B01J20/28054 ,  B01J20/28092 ,  B01J20/30 ,  B01J20/305 ,  B01J20/3078 ,  B01J2220/445 ,  C09K5/047 ,  F25B17/08 ,  F25B27/007 ,  F25B35/04 ,  F25B37/00 ,  F25B2500/01

Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

Abstract translation: 描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。 这种吸附结构在吸附剂型制冷系统中有用。 还描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触以形成 一个结构。 该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第 第二个地区。

公开(公告)号：US12300498B2

公开(公告)日：2025-05-13

申请号：US18525636

申请日：2023-11-30

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau

IPC: H01L21/306 ,  C09K13/06 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US20240150653A1

公开(公告)日：2024-05-09

申请号：US18376226

申请日：2023-10-03

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Etchant compositions for selective etching of silicon nitride in the presence of silicon oxide and polysilicon are provided. The etchant compositions may achieve passivation of at least one of silicon oxide, polysilicon, or any combination thereof, while selectively etching silicon nitride, in a single step by applying the etchant composition to a substrate. The etchant compositions may comprise at least 60% by weight of phosphoric acid based on a total weight of the etchant composition; at least 1% by weight of water based on the total weight of the etchant composition; and no greater than 2% by weight of a metal oxidizer based on the total weight of the etchant composition.

公开(公告)号：US20240096635A1

公开(公告)日：2024-03-21

申请号：US18525636

申请日：2023-11-30

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau

IPC: H01L21/306 ,  C09K13/06 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L21/30604 ,  C09K13/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US11875997B2

公开(公告)日：2024-01-16

申请号：US15951030

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Steven M. Bilodeau

IPC: H01L21/306 ,  C09K13/06 ,  H01L21/02 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L21/30604 ,  C09K13/06 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: Compositions useful for the selective removal by etching of silicon-germanium-containing materials relative to silicon-containing materials, from a microelectronic device having features containing these materials at a surface, the compositions containing hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid that will improve performance as measured by one or more of an etching rate or selectivity and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

公开(公告)号：US11365351B2

公开(公告)日：2022-06-21

申请号：US17066152

申请日：2020-10-08

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel I. Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11781066B2

公开(公告)日：2023-10-10

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

CPC classification number: C09K13/06 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/31111

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US10043658B2

公开(公告)日：2018-08-07

申请号：US15862205

申请日：2018-01-04

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.