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公开(公告)号：US20190123268A1
公开(公告)日：2019-04-25
申请号：US16230031
申请日：2018-12-21
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Jijun SUN , Nicholas RIZZO , Jon SLAUGHTER , Dimitri HOUSSAMEDDINE , Frederick MANCOFF
CPC classification number: H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
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公开(公告)号：US20170117461A1
公开(公告)日：2017-04-27
申请号：US15388650
申请日：2016-12-22
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Phillip MATHER , Kenneth SMITH , Sanjeev AGGARWAL , Jon SLAUGHTER , Nicholas RIZZO
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
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公开(公告)号：US20240397731A1
公开(公告)日：2024-11-28
申请号：US18792891
申请日：2024-08-02
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack, including an electrically conductive material, and a seed region disposed above the electrically conductive material and including chromium (Cr). A chromium content of the seed region is large enough to render the seed region substantially non-magnetic. The magnetoresistive stack includes a fixed magnetic region disposed above the seed region. The fixed magnetic region includes a synthetic antiferromagnetic structure including a first ferromagnetic region disposed above the seed region, a coupling layer disposed on and in contact with the first ferromagnetic region, and a second ferromagnetic region disposed on and in contact with the coupling layer. The magnetoresistive stack includes one or more dielectric layers disposed above the second ferromagnetic region, and a free magnetic region disposed above the one or more dielectric layers.
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公开(公告)号：US20230225135A1
公开(公告)日：2023-07-13
申请号：US18185725
申请日：2023-03-17
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US20200266235A1
公开(公告)日：2020-08-20
申请号：US16870099
申请日：2020-05-08
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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Patent Agency Ranking
公开(公告)号：US20190386212A1
公开(公告)日：2019-12-19
申请号：US16551952
申请日：2019-08-27
Applicant: Everspin Technologies, Inc.
Inventor： Renu WHIG , Jijun SUN , Nicholas RIZZO , Jon SLAUGHTER , Dimitri HOUSSAMEDDINE , Frederick MANCOFF
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
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公开(公告)号：US20190280198A1
公开(公告)日：2019-09-12
申请号：US16419165
申请日：2019-05-22
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Jijun SUN , Nicholas RIZZO , Jon SLAUGHTER , Dimitri HOUSSAMEDDINE , Frederick MANCOFF
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
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公开(公告)号：US20160260895A1
公开(公告)日：2016-09-08
申请号：US15145515
申请日：2016-05-03
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Phillip MATHER , Kenneth SMITH , Sanjeev AGGARWAL , Jon SLAUGHTER , Nicholas RIZZO
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
Abstract translation: 半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。 该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。
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公开(公告)号：US20210288245A1
公开(公告)日：2021-09-16
申请号：US17263434
申请日：2019-07-29
Applicant: Everspin Technologies, Inc.
Inventor： Renu WHIG , Sumio IKEGAWA , Jon SLAUGHTER , Michael TRAN , Jacob Wang CHENCHEN , Ganesh Kolliyil RAJAN
Abstract: A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.
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公开(公告)号：US20200043979A1
公开(公告)日：2020-02-06
申请号：US16601848
申请日：2019-10-15
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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