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公开(公告)号：US11069832B2
公开(公告)日：2021-07-20
申请号：US16677806
申请日：2019-11-08
发明人： Jeehwan Kim , Ning Li , Devendra K. Sadana
IPC分类号： H01L33/10 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/00 , H01L33/30
摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.
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公开(公告)号：US11011655B2
公开(公告)日：2021-05-18
申请号：US16376791
申请日：2019-04-05
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/077 , H01L31/0376 , H01L31/0352 , H01L31/0224 , H01L31/075
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
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公开(公告)号：US10651273B2
公开(公告)日：2020-05-12
申请号：US15650328
申请日：2017-07-14
IPC分类号： H01L29/786 , H01L29/66 , H01L29/08 , H01L21/02 , H01L29/267 , H01L29/26 , H01L21/425 , H01L21/445 , H01L21/768 , H01L27/12 , H01L29/417 , H01L29/45 , H01L29/06 , H01L21/84
摘要： A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.
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14.发明授权公开(公告)号：US10593815B2
公开(公告)日：2020-03-17
申请号：US15894690
申请日：2018-02-12
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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公开(公告)号：US20200075804A1
公开(公告)日：2020-03-05
申请号：US16677806
申请日：2019-11-08
发明人： Jeehwan Kim , Ning Li , Devendra K. Sadana
IPC分类号： H01L33/10 , H01L33/12 , H01L31/18 , H01L31/105 , H01L31/0352 , H01L31/0304 , H01L31/0232
摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.
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公开(公告)号：US20190288146A1
公开(公告)日：2019-09-19
申请号：US16429568
申请日：2019-06-03
发明人： Joel P. De Souza , Harold John Hovel , Daniel Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224
摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.
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公开(公告)号：US10396182B2
公开(公告)日：2019-08-27
申请号：US15237198
申请日：2016-08-15
IPC分类号： H01L21/32 , H01L21/76 , H01L21/24 , H01L29/66 , H01L21/324 , H01L29/16 , H01L29/161 , H01L21/762 , H01L29/786 , H01L21/02 , H01L21/228 , H01L21/288 , H01L29/10 , H01L29/78 , H01L21/265 , H01L29/775
摘要： A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.
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公开(公告)号：US20190259886A1
公开(公告)日：2019-08-22
申请号：US16400390
申请日：2019-05-01
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10388808B2
公开(公告)日：2019-08-20
申请号：US16013372
申请日：2018-06-20
IPC分类号： H01L31/0236 , H01L31/047 , H01L31/18 , H01L31/075 , H01L31/046
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US10366881B2
公开(公告)日：2019-07-30
申请号：US15468864
申请日：2017-03-24
发明人： Kangguo Cheng , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana
IPC分类号： H01L21/30 , H01L21/02 , H01L29/267
摘要： A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.
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