摘要:
A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.
摘要:
A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.
摘要:
A drive apparatus for a liquid crystal dazzlement preventing mirror arrangement for automatically setting a liquid crystal panel of the mirror arrangment to a dazzlement preventing state by detecting illuminance on the mirror surface and brightness in region near the mirror. An incident light detecting unit detects incident light onto the mirror. An ambient light detecting unit detects brightness in a region around mirror. A control unit receives both the incident light and the ambient light signals and produces a control signal for driving the liquid crystal panel through a drive unit. The apparatus includes an illuminance descrimination function, which is performed in such a manner that in the event of the illuminance on the mirror surface is higher than first prescribed set value of incident light illuminance and the illuminance in region around the mirror is lower than a prescribed set value of ambient light illuminance, the dazzlement preventing state is provided, and that in the event of the incident light illuminance is higher than a second prescribed set value of incident light illuminance which is higher than that of the first set value, irrespective of the ambient light illuminance, the dazzlement preventing state is also provided.
摘要:
This invention discloses a glare-shielding reflector which controls light reflectance electrically. The present invention provides a glare-shielding type reflector having a photosensor block which can detect an incident angle of a luminous flux to the reflector and a glare-shielding layer which is divided into plural units and driven individually. A glare-shielding layer formed on a front surface of a mirror is divided into plural units and only the specified glare-shielding units are automatically put into a glare-shielding state, according to the incident angle of the luminous flux to the mirror.
摘要:
Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1,600-1,900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.
摘要:
Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1,600-1,900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要:
There is provided an image processor and a method thereof for high-speed compensation for taken-image blurs produced by camera shakes or the like. In the first instance, a motion-detecting area is selected for each of two images taken by an image sensor. When projective data is calculated by means of computing in a predetermined direction pixels of the motion-detecting areas, the motion vector between the two images can be acquired based on the projective data. The image correlativity between the two images is then calculated in the direction that the motion vector designates; and the amount of pixel displacement between the two images is calculated based on the correlativity values acquired by the calculation. Moreover, the area that has been produced by displacing an image output area in a camera-shake compensation area designated in the second frame, by the pixel-displacement amount calculated by a displacement calculator is cut away from the camera-shake compensation area, and is outputted as an image for the image output area of the second frame.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.