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11.发明申请LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME 有权低电压高增益高速锗片检测器及其制造方法公开(公告)号：US20140048772A1
公开(公告)日：2014-02-20
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , In Gyoo KIM , Jin Hyuk OH , Sun Ae KIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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12.发明公开公开(公告)号：US20230391956A1
公开(公告)日：2023-12-07
申请号：US18205153
申请日：2023-06-02
Inventor： GWANG-MUN CHOI , Yong Sung EOM , Jiho JOO , KWANG-SEONG CHOI , Seok-Hwan MOON , Jin Hyuk OH , Ho-Gyeong YUN , CHANMI LEE , Ki Seok JANG
IPC: C08G77/18
CPC classification number: C08G77/18
Abstract: Provided is an organic-inorganic compound including a first structural body and a curable reactive group, wherein the first structural body may have a structure in which silane and isohexide are chemically bonded through a silyl ether bond.
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13.发明公开公开(公告)号：US20230326810A1
公开(公告)日：2023-10-12
申请号：US18297461
申请日：2023-04-07
Inventor： GWANG-MUN CHOI , Yong Sung EOM , Jiho JOO , KWANG-SEONG CHOI , Seok-Hwan MOON , Jin Hyuk OH , Ho-Gyeong YUN , CHANMI LEE , Ki Seok JANG
CPC classification number: H01L22/20 , H05B6/6491 , H05B6/645 , H01L21/565
Abstract: Provided are a microwave heating device and a method for manufacturing a semiconductor packaging using the same. The microwave heating device includes a microwave generator configured to generate microwaves, a microwave absorbing layer configured to receive the microwaves so as to be heated, a temperature measuring layer provided on the microwave absorbing layer, a sensor configured to detect a temperature of the temperature measuring layer, and a controller connected to the sensor and the microwave generator to determine the temperature of the microwave absorbing layer using a detection signal of the sensor, the controller being configured to control a voltage of the microwaves provided from the microwave generator based on the temperature of the microwave absorbing layer.
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Patent Agency Ranking
公开(公告)号：US20220402070A1
公开(公告)日：2022-12-22
申请号：US17843504
申请日：2022-06-17
Inventor： Ki Seok JANG , Yong Sung EOM , GWANG-MUN CHOI , KWANG-SEONG CHOI , Jiho JOO , Seok-Hwan MOON , CHANMI LEE
IPC: B23K26/324
Abstract: Provided are a laser control structure and a laser bonding method using the same, and more particularly, a laser bonding method including: forming bonding portions on a substrate; providing a bonding object onto the bonding portions; providing a laser control structure onto the bonding object or the substrate; irradiating a laser toward the bonding object and the bonding portions; controlling quantity of laser light absorbed through the laser control structure; using the controlled quantity of laser light to heat the bonding portions and the bonding object to a bonding temperature; and bonding the bonding portions and the bonding object, wherein the laser control structure includes: a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region, wherein: the first thin film laminate includes at least one first thin film layer and at least one second thin film layer, which are laminated on the first region; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer, which are laminated on the second region; reflectance or absorptivity of the first thin film laminate with respect to laser is different from reflectance or absorptivity of the second thin film laminate; and the bonding temperature varies according to the quantity of laser light.
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公开(公告)号：US20220102603A1
公开(公告)日：2022-03-31
申请号：US17399754
申请日：2021-08-11
Inventor： Kwang-Seong CHOI , Yong Sung EOM , Jiho JOO , Gwang-Mun CHOI , Seok-Hwan MOON , Chanmi LEE , Ki Seok JANG
Abstract: Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.
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公开(公告)号：US20210252620A1
公开(公告)日：2021-08-19
申请号：US17178571
申请日：2021-02-18
Inventor： KWANG-SEONG CHOI , Yong Sung EOM , Jiho JOO , Seok-Hwan MOON , Ho-Gyeong YUN , Ki Seok JANG , GWANG-MUN CHOI
Abstract: The present disclosure relates to a transfer and bonding method using a laser. As a plurality of devices or packages are simultaneously transferred onto a substrate from a transfer tape by irradiating a top surface of the transfer tape with a first laser, and the plurality of transferred devices or packages are simultaneously bonded to pads of a substrate by irradiating a top surface of the devices or packages with a second laser, a speed of a transfer and bonding process may be extremely maximized.
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公开(公告)号：US20170269298A1
公开(公告)日：2017-09-21
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , myung joon KWACK
IPC: G02B6/12 , G02B6/13 , H01L27/15 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160211402A1
公开(公告)日：2016-07-21
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho JOO , Gyungock KIM , Myungjoon KWACK , Sang Hoon KIM , Sun Ae KIM , In Gyoo KIM , Jaegyu PARK , Jin Hyuk OH , Ki Seok JANG
IPC: H01L31/109 , H01L31/0224 , H01L31/0352 , H01L31/0304 , H01L31/028
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract translation: 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。
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