公开(公告)号：US20180102440A1

公开(公告)日：2018-04-12

申请号：US15840026

申请日：2017-12-13

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Ruizhi Shi ,  Jean Claude Labarrie

IPC: H01L31/024 ,  H01L27/16 ,  H01L31/20 ,  H01L31/18 ,  H01L27/14 ,  H01L31/028 ,  H01L27/144

CPC classification number: H01L31/024 ,  H01L23/345 ,  H01L27/14 ,  H01L27/1443 ,  H01L27/16 ,  H01L31/028 ,  H01L31/1808 ,  H01L31/204 ,  Y02E10/547

Abstract: A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.

公开(公告)号：US20170322373A1

公开(公告)日：2017-11-09

申请号：US15659880

申请日：2017-07-26

Applicant: Elenion Technologies, LLC

Inventor： Ruizhi Shi ,  Yang Liu ,  Ari Novack ,  Yangjin Ma ,  Kishore Padmaraju ,  Michael J. Hochberg

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/42

CPC classification number: G02B6/4277 ,  G02B6/12004 ,  G02B6/122 ,  G02B2006/12107 ,  G02B2006/12157

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

公开(公告)号：US20170139146A1

公开(公告)日：2017-05-18

申请号：US15418246

申请日：2017-01-27

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Ruizhi Shi ,  Michael J. Hochberg ,  Thomas Baehr-Jones

IPC: G02B6/30 ,  G02B6/132 ,  G02B6/122 ,  G02B6/125 ,  G02B6/14

CPC classification number: G02B6/305 ,  G02B6/12002 ,  G02B6/1223 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/132 ,  G02B6/134 ,  G02B6/136 ,  G02B6/14 ,  G02B6/2821 ,  G02B6/29332 ,  G02B2006/12121 ,  G02B2006/12123

Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.

公开(公告)号：US20190339547A1

公开(公告)日：2019-11-07

申请号：US16517822

申请日：2019-07-22

Applicant: Elenion Technologies, LLC

Inventor： Matthew Akio Streshinsky ,  Ari Novack ,  Kishore Padmaraju ,  Michael J. Hochberg ,  Alexander Rylyakov

IPC: G02F1/01 ,  G02F1/225

Abstract: An optical waveguide modulator with automatic bias control is disclosed. A portion of the modulator light is mixed with reference light and converted to one or more electrical feedback signals. An electrical feedback circuit controls the modulator bias responsive to the feedback signals.

公开(公告)号：US10429313B2

公开(公告)日：2019-10-01

申请号：US15427185

申请日：2017-02-08

Applicant: Elenion Technologies, LLC

Inventor： Matthew Akio Streshinsky ,  Ari Novack ,  Michael J. Hochberg

IPC: G01R31/311 ,  G01N21/88 ,  G01B11/30 ,  H01L21/66 ,  G01R31/308

Abstract: A test system for determining a surface characteristic of a chip facet includes an on-chip waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.

公开(公告)号：US10359567B2

公开(公告)日：2019-07-23

申请号：US14860537

申请日：2015-09-21

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Matthew Akio Streshinsky ,  Michael J. Hochberg

IPC: G02B6/12 ,  G02B6/13 ,  G01M11/00 ,  G02B6/124 ,  H01L21/66 ,  G01R31/308

Abstract: A qualification apparatus for a photonic chip on a wafer that leaves undisturbed an edge coupler that provides an operating port for the photonic devices or circuits on the chip during normal operation in order to not introduce extra loss in the optical path of the final circuit. The qualification apparatus provides an optical path that is angled with regard to the surface of the chip, for example by using a grating coupler. The qualification apparatus can be removed after the chip is qualified. Optionally, the qualification apparatus can be left in communication with the chip and optionally employed as an input port for the chip after the chip has been separated from other chips on a common substrate.

公开(公告)号：US10217881B2

公开(公告)日：2019-02-26

申请号：US16030134

申请日：2018-07-09

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: G01J5/00 ,  H01L31/0352 ,  H01L31/105 ,  H01L27/146 ,  H01L31/0256 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US20180342634A1

公开(公告)日：2018-11-29

申请号：US16030134

申请日：2018-07-09

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/105 ,  H01L27/146 ,  H01L31/0256 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/0352 ,  H01L27/14638 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/0256 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1808 ,  Y02E10/547

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US20180224501A1

公开(公告)日：2018-08-09

申请号：US15427185

申请日：2017-02-08

Applicant: Elenion Technologies, LLC

Inventor： Matthew Akio Streshinsky ,  Ari Novack ,  Michael J. Hochberg

IPC: G01R31/311 ,  G01N21/88

CPC classification number: G01N21/8806 ,  G01B11/30 ,  G01R31/308 ,  G01R31/311 ,  H01L22/12 ,  H01L22/30

Abstract: A test system for determining a surface characteristic of a chip facet comprises a chip, which has a facet and includes a waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.

公开(公告)号：US10901150B2

公开(公告)日：2021-01-26

申请号：US16439463

申请日：2019-06-12

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Yaojia Chen

IPC: G02B6/122 ,  H01L31/028 ,  H01L31/107 ,  G02B6/12

Abstract: A metal-contact-free photodetector includes an optically absorbing material, e.g. germanium, mounted on a device layer of a photonic integrated circuit, which includes a p-type contact and an n-type contact on opposite sides of a waveguide. The contacts are comprise of a plurality of independently doped regions ranging from lowest doped adjacent the waveguide to highest doped remote from the waveguide. An additional element is to add p and/or n doping on one or more of the sidewalls of the optically absorbing material, e.g Germanium. The advantage compared to the previously disclosed metal-contact-free photodetectors is that the bandwidth is much higher, and full speed is attained at lower voltage.