公开(公告)号：US20240317485A1

公开(公告)日：2024-09-26

申请号：US18673409

申请日：2024-05-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Tadashi OOMATSU ,  Tetsuya SHIMIZU

IPC: B65D85/00 ,  B65D25/14 ,  B65D81/26 ,  G03F7/00 ,  G03F7/32

CPC classification number: B65D85/70 ,  B65D25/14 ,  B65D81/26 ,  G03F7/32 ,  G03F7/325 ,  G03F7/0012

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

公开(公告)号：US20210130084A1

公开(公告)日：2021-05-06

申请号：US17141335

申请日：2021-01-05

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Tadashi OOMATSU

IPC: B65D85/84 ,  B01D3/00 ,  B01D39/20 ,  B65D25/14 ,  C25F3/24 ,  C11D7/50

Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.

公开(公告)号：US20190258168A1

公开(公告)日：2019-08-22

申请号：US16396786

申请日：2019-04-29

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Michihiro SHIRAKAWA ,  Tadashi OOMATSU

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  C08F220/16 ,  C08F212/14 ,  C08F220/28 ,  C08F220/36 ,  G03F7/039 ,  G03F7/038 ,  G03F7/30

Abstract: An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.

公开(公告)号：US20180037688A1

公开(公告)日：2018-02-08

申请号：US15703115

申请日：2017-09-13

Applicant: FUJIFILM Corporation

Inventor： Yuichiro GOTO ,  Kazuhiro MARUMO ,  Hirotaka KITAGAWA ,  Tadashi OOMATSU

IPC: C08F222/14 ,  B29C59/02 ,  G03F7/00

CPC classification number: C08F222/14 ,  B29C59/02 ,  C08F2/48 ,  C08F222/10 ,  C08F2220/1858 ,  C08F2220/1866 ,  C08F2220/1875 ,  C08F2220/1883 ,  C08F2220/1891 ,  C08F2222/1013 ,  C08F2800/20 ,  G03F7/0002 ,  H01L21/027

Abstract: Provided are a curable composition for imprints which is capable of both improving releasability and suppressing occurrence of waviness during etching, as well as a cured product, a pattern forming method, a lithography method, a pattern, and a lithography mask, each of which uses the curable composition for imprints. The curable composition for imprints includes a monofunctional polymerizable compound, a polyfunctional polymerizable compound containing at least one of an alicyclic structure or an aromatic ring structure and having a viscosity at 25° C. of 150 mPa·s or less, and a photopolymerization initiator, in which the monofunctional polymerizable compound is contained in an amount of 5 to 30 mass % with respect to the total polymerizable compound in the curable composition for imprints, and the cured film of the curable composition for imprints has a modulus of elasticity of 3.5 GPa or less and a glass transition temperature of 90° C. or higher.

公开(公告)号：US20170088743A1

公开(公告)日：2017-03-30

申请号：US15378831

申请日：2016-12-14

Applicant: FUJIFILM Corporation

Inventor： Hirotaka KITAGAWA ,  Tadashi OOMATSU

IPC: C09D133/14 ,  B05D3/10 ,  B05D3/06 ,  B29C59/02 ,  B05D1/00 ,  B05D3/12

CPC classification number: C09D133/14 ,  B05D1/005 ,  B05D3/06 ,  B05D3/107 ,  B05D3/12 ,  B29C59/022 ,  B29C59/026 ,  B29K2067/04 ,  B29L2009/005 ,  B32B27/30 ,  C08F8/14 ,  C08F290/062 ,  C08F290/142 ,  C08F2438/03 ,  G03F7/0002 ,  G03F7/0007 ,  G03F7/094 ,  C08F220/06 ,  C08F2220/305 ,  C08F220/30

Abstract: A resin composition for underlayer film formation capable of forming an underlayer film having good adhesiveness and excellent surface flatness, a layered product, a method for forming a pattern and a process for producing a device are provided. The resin composition for underlayer film formation includes a resin having a group represented by General Formula (A) and a group represented by General Formula (B), and a solvent. Ra1 represents a hydrogen atom or a methyl group, Rb1 and Rb2 each independently represents an unsubstituted linear or branched alkyl group having 1 to 20 carbon atoms or an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, Rb3 represents an unsubstituted linear or branched alkyl group having 2 to 20 carbon atoms or an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, and Rb2 and Rb3 may be bonded to each other to form a ring.