公开(公告)号：US20230194983A1

公开(公告)日：2023-06-22

申请号：US18109399

申请日：2023-02-14

Applicant: FUJIFILM Corporation

Inventor： Tsutomu YOSHIMURA ,  Yasunori YONEKUTA ,  Naoya HATAKEYAMA ,  Kohei HIGASHI ,  Yoichi NISHIDA

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/038 ,  G03F7/0045

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),

in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 µm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US20190137875A1

公开(公告)日：2019-05-09

申请号：US16234022

申请日：2018-12-27

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Yasunori YONEKUTA ,  Toshiaki FUKUHARA ,  Takamitsu TOMIGA ,  Fumihiro YOSHINO

IPC: G03F7/039 ,  H01L21/027

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin which has a repeating unit having an alkyleneoxy chain and a repeating unit having an aromatic group, and has a concentration of the solid content of 10% by mass or more. A pattern forming method has (i) forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 μm or more on a substrate with an actinic ray-sensitive or radiation-sensitive resin composition containing a resin which has a repeating unit having an alkyleneoxy chain.

公开(公告)号：US20180299776A1

公开(公告)日：2018-10-18

申请号：US16014161

申请日：2018-06-21

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Akiyoshi GOTO ,  Yasunori YONEKUTA

IPC: G03F7/038 ,  C08F30/04 ,  G03F7/039 ,  G03F7/075 ,  G03F7/20 ,  G03F7/32

Abstract: Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

公开(公告)号：US20180120706A1

公开(公告)日：2018-05-03

申请号：US15851703

申请日：2017-12-21

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Keiyu OU ,  Naoya HATAKEYAMA ,  Akiyoshi GOTO ,  Keita KATO ,  Takashi YAKUSHIJI ,  Tadashi OMATSU

IPC: G03F7/36 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/20 ,  B32B27/18 ,  C08F212/04 ,  C08F220/06

CPC classification number: G03F7/36 ,  B32B27/18 ,  C08F12/24 ,  C08F212/04 ,  C08F212/14 ,  C08F220/06 ,  C09D125/18 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/20 ,  G03F7/325 ,  C08F212/32

Abstract: Provided are a pattern forming method including (1) a step of forming a resist underlayer film on a substrate to be processed, (2) a step of forming a resist film on the resist underlayer film, using a resist composition containing (A) a resin having a repeating unit containing a Si atom, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (3) a step of exposing the resist film, (4) a step of developing the exposed resist film using a developer including an organic solvent, thereby forming a negative tone resist pattern, and (5) a step of processing the resist underlayer film and the substrate to be processed, using the resist pattern as a mask, thereby forming a pattern, in which the content of the resin (A) is 20% by mass or more with respect to the total solid content of the resist composition.

公开(公告)号：US20180011406A1

公开(公告)日：2018-01-11

申请号：US15708963

申请日：2017-09-19

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08F220/18 ,  G03F7/20 ,  G03F7/16 ,  C08F220/28 ,  G03F7/004 ,  C09D133/14 ,  C09D133/10 ,  C09D133/06 ,  G03F7/32 ,  G03F7/038

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/185 ,  C08F2220/1858 ,  C08F2220/1891 ,  C08F2220/283 ,  C09D133/066 ,  C09D133/10 ,  C09D133/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/027

Abstract: A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

公开(公告)号：US20170371244A1

公开(公告)日：2017-12-28

申请号：US15700518

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  C08L101/00 ,  C08L33/16 ,  C08L33/10 ,  C08K5/32 ,  G03F7/32 ,  C08F20/36

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.