公开(公告)号：US20190196064A1

公开(公告)日：2019-06-27

申请号：US16288768

申请日：2019-02-28

Applicant: FUJIFILM Corporation

Inventor： Seigo NAKAMURA ,  Kenichi UMEDA ,  Yuichiro ITAI ,  Shinichiro SONODA

IPC: G02B1/111 ,  G02B1/113 ,  B32B15/04 ,  G02B1/18

CPC classification number: G02B1/111 ,  B32B7/02 ,  B32B9/00 ,  B32B15/04 ,  B32B27/00 ,  G02B1/113 ,  G02B1/18 ,  G02B15/20

Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

公开(公告)号：US20190170908A1

公开(公告)日：2019-06-06

申请号：US16269271

申请日：2019-02-06

Applicant: FUJIFILM Corporation

Inventor： Kenichi UMEDA ,  Seigo NAKAMURA ,  Yuichiro ITAI ,  Hideki YASUDA

IPC: G02B1/115

Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

公开(公告)号：US20180366590A1

公开(公告)日：2018-12-20

申请号：US16114610

申请日：2018-08-28

Applicant: FUJIFILM Corporation

Inventor： Seigo NAKAMURA ,  Yoshiki MAEHARA ,  Yuichiro ITAI ,  Yoshihisa USAMI

IPC: H01L29/786 ,  H01L51/05

Abstract: Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

公开(公告)号：US20250098540A1

公开(公告)日：2025-03-20

申请号：US18805553

申请日：2024-08-15

Applicant: FUJIFILM CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Seigo NAKAMURA

IPC: H10N30/072 ,  H10N30/00 ,  H10N30/076 ,  H10N30/50 ,  H10N30/853

Abstract: A piezoelectric laminate comprise: a substrate, a lower electrode layer and a piezoelectric film, in which in a case where an upper electrode layer is formed on the piezoelectric film, and a voltage applied between the upper electrode layer and the lower electrode layer is swept, in a current-voltage curve showing a change in a current with respect to a change in the voltage, which is obtained in a case where with the lower electrode layer being grounded and the upper electrode layer being used as a drive electrode, an applied voltage to the piezoelectric film is gradually increased from 0 V to a positive side and then gradually decreased from the positive side to a negative side via 0 V, the number of peaks during an increase of the voltage and the number of peaks during a decrease of the voltage are different from each other.

公开(公告)号：US20240114801A1

公开(公告)日：2024-04-04

申请号：US18458127

申请日：2023-08-29

Applicant: FUJIFILM CORPORATION

Inventor： Seigo NAKAMURA ,  Hiroyuki KOBAYASHI ,  Shinya SUGIMOTO ,  Tsutomu SASAKI

IPC: H10N30/853 ,  H10N30/06 ,  H10N30/20 ,  H10N30/88

CPC classification number: H10N30/8554 ,  H10N30/06 ,  H10N30/2047 ,  H10N30/883

Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb at an A site and containing Zr, Ti, and M at a B site as a main component, an M composition ratio in the first piezoelectric film is different from an M composition ratio in the second piezoelectric film, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.

公开(公告)号：US20240023452A1

公开(公告)日：2024-01-18

申请号：US18338351

申请日：2023-06-21

Applicant: FUJIFILM CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Seigo NAKAMURA

IPC: H10N30/853 ,  H10N30/00

CPC classification number: H10N30/8554 ,  H10N30/10516

Abstract: Regarding the piezoelectric laminate and the piezoelectric element, in the piezoelectric laminate including, on a substrate, a lower electrode layer and a piezoelectric film in this order, a seed layer consisting of a conductive oxide is provided between the lower electrode layer and the piezoelectric film, and the piezoelectric film contains a perovskite-type oxide represented by General Formula I,


Pb1-y2+αAy2{(Ti,Zr)1-x-y1NbxB1y1}O3  General Formula I



here, A is an A site element, where it is one or more elements including at least La, B1 is a B site element, which is one or more divalent or trivalent elements, O is an oxygen element, and x, y1, y2, and α satisfy 0.05

公开(公告)号：US20230098590A1

公开(公告)日：2023-03-30

申请号：US17894863

申请日：2022-08-24

Applicant: FUJIFILM Corporation

Inventor： Seigo NAKAMURA ,  Hiroyuki KOBAYASHI

IPC: H01L41/047 ,  H01L41/08 ,  H01L41/187

Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

公开(公告)号：US20190173013A1

公开(公告)日：2019-06-06

申请号：US16270289

申请日：2019-02-07

Applicant: FUJIFILM Corporation

Inventor： Seigo NAKAMURA ,  Hiroyuki YAEGASHI

IPC: H01L51/00 ,  H01L29/786

Abstract: Provided is a method of producing a high-quality film having a thin film and high uniformity in film thickness or the like. The method of producing a film includes supplying a raw material solution containing a solvent and a material that forms a film onto a substrate and drying the solvent to form the film on the substrate. A coating blade holding the raw material solution on the substrate is used, and the coating blade has a facing surface which faces a surface of the substrate and at least one side surface which is provided in the periphery of the facing surface and is in contact with the raw material solution. The solvent of the raw material solution is dried along a specific direction to form the film.

公开(公告)号：US20170009339A1

公开(公告)日：2017-01-12

申请号：US15270001

申请日：2016-09-20

Applicant: FUJIFILM Corporation

Inventor： Seigo NAKAMURA ,  Yoshihiko MOCHIZUKI ,  Atsushi MUKAI

IPC: C23C16/40 ,  C23C16/505

CPC classification number: C23C16/401 ,  C23C16/308 ,  C23C16/345 ,  C23C16/505

Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the 0 proportion per unit thickness is 2%/nm to 8%/nm.

Abstract translation: 阻气膜包括基材膜和无机层，其中无机层包括Si，N，H和O，无机层在厚度方向的中心包括厚度大于5nm的均匀区域 在均匀区域中，Si，N，H和O的比例是均匀的，O比例低，无机层的界面接触区域中的任一个或两者都是含氧区域，其中O比例由 在均匀区域侧至界面的方向上，“O比例（O / Si / N，O的总数×100％）”的表达式增加，每单位厚度的0比例的变化为 2％/ nm至8％/ nm。

公开(公告)号：US20160359114A1

公开(公告)日：2016-12-08

申请号：US15244398

申请日：2016-08-23

Applicant: FUJIFILM CORPORATION

Inventor： Seigo NAKAMURA

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0012 ,  G03F9/00 ,  H01L21/0274 ,  H01L21/32139 ,  H01L23/544 ,  H01L29/7869 ,  H01L51/0018 ,  H01L51/0019 ,  H01L51/0566 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the manufacturing of transistors, a film substrate on which three or more alignment marks are formed is used, the alignment marks are detected, and a treatment for controlling the expansion and shrinkage of the substrate is carried out once or more by means of at least one of a temperature control of the substrate and a humidity control of the substrate depending on detection results thereof. Therefore, in the manufacturing of transistors in which films are used as substrates, it is possible to form constituent members of transistors such as source electrodes or drain electrodes without pattern deviation regardless of the expansion and shrinkage of substrates attributed to environmental changes.

Abstract translation: 在晶体管的制造中，使用其上形成有三个或更多个对准标记的膜基板，检测对准标记，并且至少通过至少一个或多个进行用于控制基板的膨胀和收缩的处理 基板的温度控制和基板的湿度控制之一取决于其检测结果。 因此，在使用膜作为基板的晶体管的制造中，无论基板的膨胀和收缩归因于环境变化，都可以形成诸如源极电极或漏电极的晶体管的构成部件，而不产生图案偏移。