ANTIREFLECTION FILM, OPTICAL ELEMENT, OPTICAL SYSTEM, METHOD OF PRODUCING ANTIREFLECTION FILM

    公开(公告)号:US20190170908A1

    公开(公告)日:2019-06-06

    申请号:US16269271

    申请日:2019-02-06

    Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

    METHOD OF MANUFACTURING FILM
    13.
    发明申请

    公开(公告)号:US20180366590A1

    公开(公告)日:2018-12-20

    申请号:US16114610

    申请日:2018-08-28

    Abstract: Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20250098540A1

    公开(公告)日:2025-03-20

    申请号:US18805553

    申请日:2024-08-15

    Abstract: A piezoelectric laminate comprise: a substrate, a lower electrode layer and a piezoelectric film, in which in a case where an upper electrode layer is formed on the piezoelectric film, and a voltage applied between the upper electrode layer and the lower electrode layer is swept, in a current-voltage curve showing a change in a current with respect to a change in the voltage, which is obtained in a case where with the lower electrode layer being grounded and the upper electrode layer being used as a drive electrode, an applied voltage to the piezoelectric film is gradually increased from 0 V to a positive side and then gradually decreased from the positive side to a negative side via 0 V, the number of peaks during an increase of the voltage and the number of peaks during a decrease of the voltage are different from each other.

    PIEZOELECTRIC ELEMENT AND ACTUATOR
    15.
    发明公开

    公开(公告)号:US20240114801A1

    公开(公告)日:2024-04-04

    申请号:US18458127

    申请日:2023-08-29

    CPC classification number: H10N30/8554 H10N30/06 H10N30/2047 H10N30/883

    Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb at an A site and containing Zr, Ti, and M at a B site as a main component, an M composition ratio in the first piezoelectric film is different from an M composition ratio in the second piezoelectric film, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20240023452A1

    公开(公告)日:2024-01-18

    申请号:US18338351

    申请日:2023-06-21

    CPC classification number: H10N30/8554 H10N30/10516

    Abstract: Regarding the piezoelectric laminate and the piezoelectric element, in the piezoelectric laminate including, on a substrate, a lower electrode layer and a piezoelectric film in this order, a seed layer consisting of a conductive oxide is provided between the lower electrode layer and the piezoelectric film, and the piezoelectric film contains a perovskite-type oxide represented by General Formula I,


    Pb1-y2+αAy2{(Ti,Zr)1-x-y1NbxB1y1}O3  General Formula I



    here, A is an A site element, where it is one or more elements including at least La, B1 is a B site element, which is one or more divalent or trivalent elements, O is an oxygen element, and x, y1, y2, and α satisfy 0.05

    PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT

    公开(公告)号:US20230098590A1

    公开(公告)日:2023-03-30

    申请号:US17894863

    申请日:2022-08-24

    Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

    METHOD OF PRODUCING FILM
    18.
    发明申请

    公开(公告)号:US20190173013A1

    公开(公告)日:2019-06-06

    申请号:US16270289

    申请日:2019-02-07

    Abstract: Provided is a method of producing a high-quality film having a thin film and high uniformity in film thickness or the like. The method of producing a film includes supplying a raw material solution containing a solvent and a material that forms a film onto a substrate and drying the solvent to form the film on the substrate. A coating blade holding the raw material solution on the substrate is used, and the coating blade has a facing surface which faces a surface of the substrate and at least one side surface which is provided in the periphery of the facing surface and is in contact with the raw material solution. The solvent of the raw material solution is dried along a specific direction to form the film.

    GAS BARRIER FILM AND METHOD OF MANUFACTURING GAS BARRIER FILM
    19.
    发明申请
    GAS BARRIER FILM AND METHOD OF MANUFACTURING GAS BARRIER FILM 有权
    气体阻隔膜和制造气体阻隔膜的方法

    公开(公告)号:US20170009339A1

    公开(公告)日:2017-01-12

    申请号:US15270001

    申请日:2016-09-20

    CPC classification number: C23C16/401 C23C16/308 C23C16/345 C23C16/505

    Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the 0 proportion per unit thickness is 2%/nm to 8%/nm.

    Abstract translation: 阻气膜包括基材膜和无机层,其中无机层包括Si,N,H和O,无机层在厚度方向的中心包括厚度大于5nm的均匀区域 在均匀区域中,Si,N,H和O的比例是均匀的,O比例低,无机层的界面接触区域中的任一个或两者都是含氧区域,其中O比例由 在均匀区域侧至界面的方向上,“O比例(O / Si / N,O的总数×100%)”的表达式增加,每单位厚度的0比例的变化为 2%/ nm至8%/ nm。

    METHOD FOR MANUFACTURING TRANSISTOR
    20.
    发明申请
    METHOD FOR MANUFACTURING TRANSISTOR 审中-公开
    制造晶体管的方法

    公开(公告)号:US20160359114A1

    公开(公告)日:2016-12-08

    申请号:US15244398

    申请日:2016-08-23

    Inventor: Seigo NAKAMURA

    Abstract: In the manufacturing of transistors, a film substrate on which three or more alignment marks are formed is used, the alignment marks are detected, and a treatment for controlling the expansion and shrinkage of the substrate is carried out once or more by means of at least one of a temperature control of the substrate and a humidity control of the substrate depending on detection results thereof. Therefore, in the manufacturing of transistors in which films are used as substrates, it is possible to form constituent members of transistors such as source electrodes or drain electrodes without pattern deviation regardless of the expansion and shrinkage of substrates attributed to environmental changes.

    Abstract translation: 在晶体管的制造中,使用其上形成有三个或更多个对准标记的膜基板,检测对准标记,并且至少通过至少一个或多个进行用于控制基板的膨胀和收缩的处理 基板的温度控制和基板的湿度控制之一取决于其检测结果。 因此,在使用膜作为基板的晶体管的制造中,无论基板的膨胀和收缩归因于环境变化,都可以形成诸如源极电极或漏电极的晶体管的构成部件,而不产生图案偏移。

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